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Journal description
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Details for article 6 of 18 found articles
| Title: |
Difference between the 1 f noise spectral density before and after stress as a measure of the submicron MOS transistors degradation |
| Author: |
Grabowski, Franciszek |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 35 (1995) nr. 3 pages 18 p. |
| Year: |
1995 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 6 of 18 found articles
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