| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A study of UIS ruggedness of mismatched paralleled SiC MOSFETs
|
Scognamillo, C.
|
|
|
164 |
C |
p.
|
artikel
|
| 2 |
Comparative study of single event upset susceptibility in the Complementary FET (CFET) and FinFET based 6T-SRAM
|
Zhang, Zhengxin
|
|
|
164 |
C |
p.
|
artikel
|
| 3 |
Editorial Board
|
|
|
|
164 |
C |
p.
|
artikel
|
| 4 |
Effect of thermal cycling on microstructure and mechanical properties of nano-silver microsolder joint
|
Peng, Zhenzhen
|
|
|
164 |
C |
p.
|
artikel
|
| 5 |
Effects of humidity, ionic contaminations and temperature on the degradation of silicone-based sealing materials used in microelectronics
|
Mehr, M. Yazdan
|
|
|
164 |
C |
p.
|
artikel
|
| 6 |
Evolution mechanism of cold adhesion force between electrical contact determined by coating hardness
|
Zhang, Ming-xu
|
|
|
164 |
C |
p.
|
artikel
|
| 7 |
Failure analysis of GaN-based optoelectronic devices: Insights into photo-induced electrochemical migration
|
Zhang, Qian
|
|
|
164 |
C |
p.
|
artikel
|
| 8 |
Health monitoring and prediction of EEPROM considering program/erase endurance and data retention stress
|
Yi, Jianmin
|
|
|
164 |
C |
p.
|
artikel
|
| 9 |
Mitigating solder voids in quad flat no-lead components: A vacuum reflow approach
|
Huang, Chien-Yi
|
|
|
164 |
C |
p.
|
artikel
|
| 10 |
Multi-objective optimal design of thermal-vibration stress and return loss of TSV interconnect structures based on response surface-NSWOA optimization algorithm
|
Wang, Lilin
|
|
|
164 |
C |
p.
|
artikel
|
| 11 |
New temperature-independent aging indicator for power semiconductor devices – Application to IGBTs
|
Khatir, Zoubir
|
|
|
164 |
C |
p.
|
artikel
|
| 12 |
Predicting aging of IGBT solder layer using saturation voltage approach with CPO-SVR data modeling
|
An, Xiaoyu
|
|
|
164 |
C |
p.
|
artikel
|
| 13 |
Quality control of lifetime drift in discrete electrical parameters in semiconductor devices via transition modeling
|
Sommeregger, Lukas
|
|
|
164 |
C |
p.
|
artikel
|
| 14 |
Single event effects hardening in SiC double-trench MOSFETs
|
Sun, Shuqing
|
|
|
164 |
C |
p.
|
artikel
|
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