| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Advanced thermal failure analysis and reliability investigations – Industrial demands and related limitations
|
Altes, Andreas
|
|
2008
|
100-101 |
8-9 |
p. 1273-1278
6 p.
|
article
|
| 2 |
A four-point-bending-test for the stability assessment of glass frit bonded molded microsensors
|
Nötzold, K.
|
|
2008
|
100-101 |
8-9 |
p. 1562-1566
5 p.
|
article
|
| 3 |
Alpha particle radiation effects in RF MEMS capacitive switches
|
Ruan, J.
|
|
2008
|
100-101 |
8-9 |
p. 1241-1244
4 p.
|
article
|
| 4 |
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques
|
Bouya, M.
|
|
2008
|
100-101 |
8-9 |
p. 1366-1369
4 p.
|
article
|
| 5 |
Analytical model for multi-junction solar cells prediction in space environment
|
Gauffier, A.
|
|
2008
|
100-101 |
8-9 |
p. 1494-1499
6 p.
|
article
|
| 6 |
An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications
|
Maricau, E.
|
|
2008
|
100-101 |
8-9 |
p. 1576-1580
5 p.
|
article
|
| 7 |
Automotive IC reliability: Elements of the battle towards zero defects
|
Kuper, Fred G.
|
|
2008
|
100-101 |
8-9 |
p. 1459-1463
5 p.
|
article
|
| 8 |
Ball grid array (BGA) solder joint intermittency real-time detection
|
Roth, N.
|
|
2008
|
100-101 |
8-9 |
p. 1155-1160
6 p.
|
article
|
| 9 |
Behaviour of 1.2kV SiC JBS diodes under repetitive high power stress
|
Banu, V.
|
|
2008
|
100-101 |
8-9 |
p. 1444-1448
5 p.
|
article
|
| 10 |
Bridging the business model gap between the semiconductor industry and the automotive industry with respect to quality and reliability
|
de Jong, M.
|
|
2008
|
100-101 |
8-9 |
p. 1112-1113
2 p.
|
article
|
| 11 |
Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency
|
Kalicinski, Stanislaw
|
|
2008
|
100-101 |
8-9 |
p. 1221-1226
6 p.
|
article
|
| 12 |
Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation
|
Miranda, E.
|
|
2008
|
100-101 |
8-9 |
p. 1604-1607
4 p.
|
article
|
| 13 |
Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing tests
|
El Brouji, H.
|
|
2008
|
100-101 |
8-9 |
p. 1473-1478
6 p.
|
article
|
| 14 |
Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120nm and 65nm technology
|
Kindereit, Ulrike
|
|
2008
|
100-101 |
8-9 |
p. 1322-1326
5 p.
|
article
|
| 15 |
Conditional time resolved photoemission for debugging ICs with intermittent faults
|
Zachariasse, Frank
|
|
2008
|
100-101 |
8-9 |
p. 1289-1294
6 p.
|
article
|
| 16 |
Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies
|
Chen, F.
|
|
2008
|
100-101 |
8-9 |
p. 1375-1383
9 p.
|
article
|
| 17 |
Defect analysis concerning variation in characteristics of PIN diode for Hybrid Vehicles
|
Goto, Yasunori
|
|
2008
|
100-101 |
8-9 |
p. 1485-1489
5 p.
|
article
|
| 18 |
Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode
|
Atanassova, E.
|
|
2008
|
100-101 |
8-9 |
p. 1193-1197
5 p.
|
article
|
| 19 |
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
|
Sauveplane, J.B.
|
|
2008
|
100-101 |
8-9 |
p. 1464-1467
4 p.
|
article
|
| 20 |
Detectability of dynamic photon emission in static Si CCD for signal path determination in integrated circuits
|
Laskowski, Piotr
|
|
2008
|
100-101 |
8-9 |
p. 1295-1299
5 p.
|
article
|
| 21 |
Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures
|
Yang, Yu
|
|
2008
|
100-101 |
8-9 |
p. 1517-1520
4 p.
|
article
|
| 22 |
Detection of localized UIS failure on IGBTs with the aid of lock-in thermography
|
Breglio, G.
|
|
2008
|
100-101 |
8-9 |
p. 1432-1434
3 p.
|
article
|
| 23 |
Determination of migration effects in Cu-via structures with respect to process-induced stress
|
Weide-Zaage, Kirsten
|
|
2008
|
100-101 |
8-9 |
p. 1393-1397
5 p.
|
article
|
| 24 |
Determination of temperature change inside IC packages during laser ablation of molding compound
|
Schwindenhammer, P.
|
|
2008
|
100-101 |
8-9 |
p. 1263-1267
5 p.
|
article
|
| 25 |
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications
|
Pic, D.
|
|
2008
|
100-101 |
8-9 |
p. 1318-1321
4 p.
|
article
|
| 26 |
Editorial
|
Groeseneken, Guido
|
|
2008
|
100-101 |
8-9 |
p. 1111-
1 p.
|
article
|
| 27 |
Effect of physical defect on shmoos in CMOS DSM technologies
|
Machouat, A.
|
|
2008
|
100-101 |
8-9 |
p. 1333-1338
6 p.
|
article
|
| 28 |
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields
|
Tazzoli, A.
|
|
2008
|
100-101 |
8-9 |
p. 1370-1374
5 p.
|
article
|
| 29 |
ESD failure signature in capacitive RF MEMS switches
|
Ruan, J.
|
|
2008
|
100-101 |
8-9 |
p. 1237-1240
4 p.
|
article
|
| 30 |
ESD issues in advanced CMOS bulk and FinFET technologies: Processing, protection devices and circuit strategies
|
Russ, Christian
|
|
2008
|
100-101 |
8-9 |
p. 1403-1411
9 p.
|
article
|
| 31 |
ESD sensitivity investigation on a wide range of high density embedded capacitors
|
Barbier, Frederic
|
|
2008
|
100-101 |
8-9 |
p. 1422-1426
5 p.
|
article
|
| 32 |
Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure
|
Busatto, G.
|
|
2008
|
100-101 |
8-9 |
p. 1306-1309
4 p.
|
article
|
| 33 |
Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs
|
Sienkiewicz, M.
|
|
2008
|
100-101 |
8-9 |
p. 1529-1532
4 p.
|
article
|
| 34 |
Failure analysis of a thin-film nitride MEMS package
|
Li, Q.
|
|
2008
|
100-101 |
8-9 |
p. 1557-1561
5 p.
|
article
|
| 35 |
Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology
|
Reverdy, A.
|
|
2008
|
100-101 |
8-9 |
p. 1279-1284
6 p.
|
article
|
| 36 |
Fast electromigration wafer mapping for wafer fab process monitoring and improvement
|
Li, Yuan
|
|
2008
|
100-101 |
8-9 |
p. 1388-1392
5 p.
|
article
|
| 37 |
Fracture morphology and mechanism of IMC in Low-Ag SAC Solder/UBM (Ni(P)-Au) for WLCSP
|
Sun, F.
|
|
2008
|
100-101 |
8-9 |
p. 1167-1170
4 p.
|
article
|
| 38 |
Generic simulator for faulty IC
|
Ferrigno, Julie
|
|
2008
|
100-101 |
8-9 |
p. 1592-1596
5 p.
|
article
|
| 39 |
High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs
|
Iannuzzo, F.
|
|
2008
|
100-101 |
8-9 |
p. 1449-1452
4 p.
|
article
|
| 40 |
Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications
|
Heer, M.
|
|
2008
|
100-101 |
8-9 |
p. 1525-1528
4 p.
|
article
|
| 41 |
IGBT module failure analysis in railway applications
|
Perpiñà, X.
|
|
2008
|
100-101 |
8-9 |
p. 1427-1431
5 p.
|
article
|
| 42 |
IGBT modules robustness during turn-off commutation
|
Busatto, G.
|
|
2008
|
100-101 |
8-9 |
p. 1435-1439
5 p.
|
article
|
| 43 |
Impact of inside spacer process on fully self-aligned 250GHz SiGe:C HBTs reliability performances: a-Si vs. nitride
|
Diop, M.
|
|
2008
|
100-101 |
8-9 |
p. 1198-1201
4 p.
|
article
|
| 44 |
Impact of silicon nitride CESL on NLDEMOS transistor reliability
|
Beylier, G.
|
|
2008
|
100-101 |
8-9 |
p. 1539-1543
5 p.
|
article
|
| 45 |
Influence of the organic pollution on the reliability of HE9 connectors
|
Crétinon, L.
|
|
2008
|
100-101 |
8-9 |
p. 1129-1132
4 p.
|
article
|
| 46 |
InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability
|
Liu, Xiang
|
|
2008
|
100-101 |
8-9 |
p. 1212-1215
4 p.
|
article
|
| 47 |
Inside front cover - Editorial board
|
|
|
2008
|
100-101 |
8-9 |
p. IFC-
1 p.
|
article
|
| 48 |
Insights on trap generation and breakdown in ultra thin SiO2 and SiON dielectrics from low voltage stress-induced leakage current measurements
|
Nicollian, Paul E.
|
|
2008
|
100-101 |
8-9 |
p. 1171-1177
7 p.
|
article
|
| 49 |
Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling
|
Biberger, Roland
|
|
2008
|
100-101 |
8-9 |
p. 1339-1342
4 p.
|
article
|
| 50 |
Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches
|
Belarni, A.
|
|
2008
|
100-101 |
8-9 |
p. 1232-1236
5 p.
|
article
|
| 51 |
Laser decapsulation of plastic packages for failure analysis: Process control and artefact investigations
|
Aubert, A.
|
|
2008
|
100-101 |
8-9 |
p. 1144-1148
5 p.
|
article
|
| 52 |
Layout analysis as supporting tool for failure localization: Basic principles and case studies
|
Hartmann, C.
|
|
2008
|
100-101 |
8-9 |
p. 1343-1348
6 p.
|
article
|
| 53 |
Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150°C
|
Feller, L.
|
|
2008
|
100-101 |
8-9 |
p. 1161-1166
6 p.
|
article
|
| 54 |
Low-cost preparation method for exposing IC surfaces in stacked die packages by micro-abrasive blasting
|
Martens, S.
|
|
2008
|
100-101 |
8-9 |
p. 1513-1516
4 p.
|
article
|
| 55 |
MIMC reliability and electrical behavior defined by a physical layer property of the dielectric
|
Ackaert, J.
|
|
2008
|
100-101 |
8-9 |
p. 1553-1556
4 p.
|
article
|
| 56 |
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors
|
Polspoel, W.
|
|
2008
|
100-101 |
8-9 |
p. 1521-1524
4 p.
|
article
|
| 57 |
NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique
|
Aresu, S.
|
|
2008
|
100-101 |
8-9 |
p. 1310-1312
3 p.
|
article
|
| 58 |
Near-field detection of photon emission from silicon with 30nm spatial resolution
|
Isakov, D.
|
|
2008
|
100-101 |
8-9 |
p. 1285-1288
4 p.
|
article
|
| 59 |
Negative bias temperature instability in n-channel power VDMOSFETs
|
Danković, D.
|
|
2008
|
100-101 |
8-9 |
p. 1313-1317
5 p.
|
article
|
| 60 |
New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure
|
Goroll, Michael
|
|
2008
|
100-101 |
8-9 |
p. 1509-1512
4 p.
|
article
|
| 61 |
Non-linear width scaling of ESD protection devices and link with p-well implant in BCD-processes
|
Olthof, E.H.T.
|
|
2008
|
100-101 |
8-9 |
p. 1417-1421
5 p.
|
article
|
| 62 |
Novel simulation approach for transient analysis and reliable thermal management of power devices
|
Castellazzi, A.
|
|
2008
|
100-101 |
8-9 |
p. 1500-1504
5 p.
|
article
|
| 63 |
On chip–package stress interaction
|
van Driel, W.D.
|
|
2008
|
100-101 |
8-9 |
p. 1268-1272
5 p.
|
article
|
| 64 |
On the temperature dependence of NBTI recovery
|
Aichinger, T.
|
|
2008
|
100-101 |
8-9 |
p. 1178-1184
7 p.
|
article
|
| 65 |
Optimization of gate poly TAB size and reliability on short channel pMOSFET
|
Seok, Jung-Eun
|
|
2008
|
100-101 |
8-9 |
p. 1185-1188
4 p.
|
article
|
| 66 |
Packaging influences on the reliability of MEMS resonators
|
Zaal, J.J.M.
|
|
2008
|
100-101 |
8-9 |
p. 1567-1571
5 p.
|
article
|
| 67 |
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications
|
Fock-Sui-Too, J.L.
|
|
2008
|
100-101 |
8-9 |
p. 1453-1458
6 p.
|
article
|
| 68 |
PLL soft functional failure analysis in advanced logic product using fault based analogue simulation and soft defect localization
|
Gao, Liming
|
|
2008
|
100-101 |
8-9 |
p. 1349-1353
5 p.
|
article
|
| 69 |
PMOS breakdown effects on digital circuits – Modeling and analysis
|
Kuang, Weidong
|
|
2008
|
100-101 |
8-9 |
p. 1597-1600
4 p.
|
article
|
| 70 |
Reduction of test effort. Looking for more acceleration for reliable components for automotive applications
|
Pufall, R.
|
|
2008
|
100-101 |
8-9 |
p. 1490-1493
4 p.
|
article
|
| 71 |
Relevant metrics for evaluation of concurrent error detection schemes
|
de Vasconcelos, Maí C.R.
|
|
2008
|
100-101 |
8-9 |
p. 1601-1603
3 p.
|
article
|
| 72 |
Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique
|
Moschou, D.C.
|
|
2008
|
100-101 |
8-9 |
p. 1544-1548
5 p.
|
article
|
| 73 |
Reliability and failure in single crystal silicon MEMS devices
|
Neels, A.
|
|
2008
|
100-101 |
8-9 |
p. 1245-1247
3 p.
|
article
|
| 74 |
Reliability- and process-variation aware design of integrated circuits
|
Alam, M.
|
|
2008
|
100-101 |
8-9 |
p. 1114-1122
9 p.
|
article
|
| 75 |
Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip
|
Salm, Cora
|
|
2008
|
100-101 |
8-9 |
p. 1139-1143
5 p.
|
article
|
| 76 |
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS
|
Moens, P.
|
|
2008
|
100-101 |
8-9 |
p. 1300-1305
6 p.
|
article
|
| 77 |
Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED
|
Jeong, Jae-Seong
|
|
2008
|
100-101 |
8-9 |
p. 1216-1220
5 p.
|
article
|
| 78 |
Reliability investigations of 850nm silicon photodiodes under proton irradiation for space applications
|
Bourqui, M.L.
|
|
2008
|
100-101 |
8-9 |
p. 1202-1207
6 p.
|
article
|
| 79 |
Reliability issues of e-Cubes heterogeneous system integration
|
Janczyk, Grzegorz
|
|
2008
|
100-101 |
8-9 |
p. 1133-1138
6 p.
|
article
|
| 80 |
Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction
|
Verchiani, M.
|
|
2008
|
100-101 |
8-9 |
p. 1412-1416
5 p.
|
article
|
| 81 |
RF CMOS reliability simulations
|
Sasse, Guido T.
|
|
2008
|
100-101 |
8-9 |
p. 1581-1585
5 p.
|
article
|
| 82 |
Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation
|
Deshayes, Y.
|
|
2008
|
100-101 |
8-9 |
p. 1354-1360
7 p.
|
article
|
| 83 |
Signal probability for reliability evaluation of logic circuits
|
Franco, Denis Teixeira
|
|
2008
|
100-101 |
8-9 |
p. 1586-1591
6 p.
|
article
|
| 84 |
Silicon based system in package: Improvement of passive integration process to avoid TBMS failure
|
Gautier, Christian
|
|
2008
|
100-101 |
8-9 |
p. 1258-1262
5 p.
|
article
|
| 85 |
Simulation of migration effects in nanoscaled copper metallizations
|
Weide-Zaage, Kirsten
|
|
2008
|
100-101 |
8-9 |
p. 1398-1402
5 p.
|
article
|
| 86 |
Solder joint and trace line failure simulation and experimental validation of fan-out type wafer level packaging subjected to drop impact
|
Chou, Chan-Yen
|
|
2008
|
100-101 |
8-9 |
p. 1149-1154
6 p.
|
article
|
| 87 |
Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants
|
Bukhori, Muhammad Faiz
|
|
2008
|
100-101 |
8-9 |
p. 1549-1552
4 p.
|
article
|
| 88 |
Statistical simulation of random dopant induced threshold voltage fluctuations for 35nm channel length MOSFET
|
Kovac, Urban
|
|
2008
|
100-101 |
8-9 |
p. 1572-1575
4 p.
|
article
|
| 89 |
Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle
|
Croes, K.
|
|
2008
|
100-101 |
8-9 |
p. 1384-1387
4 p.
|
article
|
| 90 |
Sulfur-contamination of high power white LED
|
Mura, G.
|
|
2008
|
100-101 |
8-9 |
p. 1208-1211
4 p.
|
article
|
| 91 |
Surface ESD (ESDFOS) in assembly fab machineries as a functional and reliability risk – Failure analysis, tool diagnosis and on-site-remedies
|
Jacob, Peter
|
|
2008
|
100-101 |
8-9 |
p. 1608-1612
5 p.
|
article
|
| 92 |
Systems-in-foil – Devices, fabrication processes and reliability issues
|
van den Brand, J.
|
|
2008
|
100-101 |
8-9 |
p. 1123-1128
6 p.
|
article
|
| 93 |
Temperature stability of a piezoresistive MEMS resonator including self-heating
|
Bendida, S.
|
|
2008
|
100-101 |
8-9 |
p. 1227-1231
5 p.
|
article
|
| 94 |
Testing semiconductor devices at extremely high operating temperatures
|
Borthen, Peter
|
|
2008
|
100-101 |
8-9 |
p. 1440-1443
4 p.
|
article
|
| 95 |
Thermal heating within SOI
|
Koning, J.J.
|
|
2008
|
100-101 |
8-9 |
p. 1505-1508
4 p.
|
article
|
| 96 |
Thermal modeling of high frequency DC–DC switching modules: Electromagnetic and thermal simulation of magnetic components
|
Cova, P.
|
|
2008
|
100-101 |
8-9 |
p. 1468-1472
5 p.
|
article
|
| 97 |
Thermal resistance assessment in multi-trenched power devices
|
Roig, J.
|
|
2008
|
100-101 |
8-9 |
p. 1479-1484
6 p.
|
article
|
| 98 |
Thermal storage effects on AlGaN/GaN HEMT
|
Danesin, Francesca
|
|
2008
|
100-101 |
8-9 |
p. 1361-1365
5 p.
|
article
|
| 99 |
Timing analysis of scan design integrated circuits using stimulation by an infrared diode laser in externally triggered pulsing condition
|
Kiyan, Tuba
|
|
2008
|
100-101 |
8-9 |
p. 1327-1332
6 p.
|
article
|
| 100 |
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
|
Jacob, Peter
|
|
2008
|
100-101 |
8-9 |
p. 1253-1257
5 p.
|
article
|
| 101 |
Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics
|
Hofmann, Peter
|
|
2008
|
100-101 |
8-9 |
p. 1189-1192
4 p.
|
article
|
| 102 |
Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation
|
Lamhamdi, M.
|
|
2008
|
100-101 |
8-9 |
p. 1248-1252
5 p.
|
article
|
| 103 |
Voltage-based fault path tracing by transistor operating point analysis
|
Sanada, Masaru
|
|
2008
|
100-101 |
8-9 |
p. 1533-1538
6 p.
|
article
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Journal description