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                             34 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Aluminum phthalocyanine chloride as a hole injection enhancer in organic light-emitting diodes Deng, Zhenbo
 2013
 89 C p. 22-25
4 p.
 artikel
2 Analysis and optimisation of ohmic contact resistance and surface morphology of a Ta-based diffusion barrier layer in AlGaN/GaN HEMTs on Si (111) substrates Cho, Sung-Jin
 2013
 89 C p. 85-92
8 p.
 artikel
3 A novel technique for degenerate p-type doping of germanium Sharp, James
 2013
 89 C p. 146-152
7 p.
 artikel
4 Approximate analytical expression for the tersminal voltage in multi-exponential diode models Ortiz-Conde, Adelmo
 2013
 89 C p. 7-11
5 p.
 artikel
5 Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET Darbandy, Ghader
 2013
 89 C p. 111-115
5 p.
 artikel
6 Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations Ryu, Min-Ki
 2013
 89 C p. 171-176
6 p.
 artikel
7 Control of the molecular order and cracks of the 6,13-bis(triisopropylsilylethynyl)-pentacene on a polymeric insulator by anisotropic solvent drying Keum, Chang-Min
 2013
 89 C p. 189-193
5 p.
 artikel
8 μc-Si thin film transistors with very thin active layer Samb, M.L.
 2013
 89 C p. 128-133
6 p.
 artikel
9 Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz, A.
 2013
 89 C p. 207-211
5 p.
 artikel
10 Editorial Board 2013
 89 C p. IFC-
1 p.
 artikel
11 Enhancement of light extraction efficiency in sub-300nm nitride thin-film flip-chip light-emitting diodes Lachab, M.
 2013
 89 C p. 156-160
5 p.
 artikel
12 Explicit drain current model of junctionless double-gate field-effect transistors Yesayan, Ashkhen
 2013
 89 C p. 134-138
5 p.
 artikel
13 Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate Hsu, Hsiao-Hsuan
 2013
 89 C p. 194-197
4 p.
 artikel
14 Graphene based field effect transistors: Efforts made towards flexible electronics Sharma, Bhupendra K.
 2013
 89 C p. 177-188
12 p.
 artikel
15 High performance organic ultraviolet photodetectors based on novel phosphorescent Cu(I) complexes Liu, Chun-Bo
 2013
 89 C p. 68-71
4 p.
 artikel
16 Impact of electrical stress on the electrical characteristics of 2MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics Rafí, J.M.
 2013
 89 C p. 198-206
9 p.
 artikel
17 Improved ohmic contact of Ga-Doped ZnO to p-GaN by using copper sulfide intermediate layers Gu, Wen
 2013
 89 C p. 76-80
5 p.
 artikel
18 Improvement on diode string structure for 65-nm RF ESD protection Ma, Fei
 2013
 89 C p. 142-145
4 p.
 artikel
19 InGaAs/GaAsP/GaInP quantum well lasers with window structure fabricated by impurity free vacancy disordering Zhou, Lu
 2013
 89 C p. 81-84
4 p.
 artikel
20 Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model Bresciani, M.
 2013
 89 C p. 161-166
6 p.
 artikel
21 Large spatial distribution of spin accumulation in wide Au channel Ku, Jang-Hae
 2013
 89 C p. 72-75
4 p.
 artikel
22 Material engineering of Ge x Te100−x compounds to improve phase-change memory performances Navarro, G.
 2013
 89 C p. 93-100
8 p.
 artikel
23 Micro light emitting device prepared from sputter deposited thin hafnium oxide film Kuo, Yue
 2013
 89 C p. 120-123
4 p.
 artikel
24 Multiscale simulation of carbon nanotube transistors Maneux, Cristell
 2013
 89 C p. 26-67
42 p.
 artikel
25 New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors Jeon, Dae-Young
 2013
 89 C p. 139-141
3 p.
 artikel
26 Performance improvement of normally off AlGaN/GaN FinFETs with fully gate-covered nanochannel Im, Ki-Sik
 2013
 89 C p. 124-127
4 p.
 artikel
27 Preliminary results on low power sigmoid neuron transistor response in 28nm high-k metal gate Fully Depleted SOI technology Galy, Ph.
 2013
 89 C p. 17-21
5 p.
 artikel
28 Preparing highly ordered copper phthalocyanine thin-film by controlling the thickness of the modified layer and its application in organic transistors Gu, Wen
 2013
 89 C p. 101-104
4 p.
 artikel
29 Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2 Luo, Wun-Cheng
 2013
 89 C p. 167-170
4 p.
 artikel
30 Scalability of the drain-current drive of AlGaN/GaN HFETs with gate-length Sikder, Md Jahirul
 2013
 89 C p. 105-110
6 p.
 artikel
31 Silver-coated TiO2 electrodes for high performance dye-sensitized solar cells Peng, Wei
 2013
 89 C p. 116-119
4 p.
 artikel
32 Temperature-dependent investigation of low frequency noise characteristics of mesa-, fin-, and island-isolated AlGaN/GaN HFETs Manouchehri, Farzin
 2013
 89 C p. 1-6
6 p.
 artikel
33 The enhancement of unipolar resistive switching behavior via an amorphous TiO x layer formation in Dy2O3-based forming-free RRAM Zhao, Hongbin
 2013
 89 C p. 12-16
5 p.
 artikel
34 Tricolor resonant cavity organic light-emitting diodes using dielectric distributed Bragg reflector in resonant cavity Lee, Ching-Ting
 2013
 89 C p. 153-155
3 p.
 artikel
                             34 gevonden resultaten
 
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