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                                       Details for article 33 of 34 found articles
 
 
  The enhancement of unipolar resistive switching behavior via an amorphous TiO x layer formation in Dy2O3-based forming-free RRAM
 
 
Title: The enhancement of unipolar resistive switching behavior via an amorphous TiO x layer formation in Dy2O3-based forming-free RRAM
Author: Zhao, Hongbin
Tu, Hailing
Wei, Feng
Zhang, Xinqiang
Xiong, Yuhua
Du, Jun
Appeared in: Solid-state electronics
Paging: Volume 89 (2013) nr. C pages 5 p.
Year: 2013
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 33 of 34 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands