| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comprehensive review on microwave FinFET modeling for progressing beyond the state of art
|
Crupi, Giovanni
|
|
2013
|
80 |
C |
p. 81-95
15 p.
|
artikel
|
| 2 |
Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band modulation technology
|
Chen, Wanjun
|
|
2013
|
80 |
C |
p. 76-80
5 p.
|
artikel
|
| 3 |
Analysis of the electrical characteristics of 600V-Class electron irradiated fast recovery Superjunction VDMOS
|
Zhu, Jing
|
|
2013
|
80 |
C |
p. 38-44
7 p.
|
artikel
|
| 4 |
A simple compact model for long-channel junctionless Double Gate MOSFETs
|
Lime, François
|
|
2013
|
80 |
C |
p. 28-32
5 p.
|
artikel
|
| 5 |
A solution to reducing insertion loss and achieving high sidelobe rejection for wavelet transform and reconstruction processor using SAW devices
|
Jiang, Hua
|
|
2013
|
80 |
C |
p. 105-109
5 p.
|
artikel
|
| 6 |
Characterization of DC, analog/RF, and low frequency noise in silicon-on-insulator nMOSFETs with different body-contact structures
|
Yang, Rong
|
|
2013
|
80 |
C |
p. 55-58
4 p.
|
artikel
|
| 7 |
Contact vs bulk effects in N-semi-insulating-N and P-semi-insulating-P diodes
|
Manifacier, J.C.
|
|
2013
|
80 |
C |
p. 45-54
10 p.
|
artikel
|
| 8 |
Correlation between gap state density and bias stress reliability of nanocrystalline TFTs comparing with hydrogenated amorphous silicon TFTs
|
Lee, M.H.
|
|
2013
|
80 |
C |
p. 72-75
4 p.
|
artikel
|
| 9 |
Diffusion formation of nickel silicide contacts in SiNWs
|
Beregovsky, M.
|
|
2013
|
80 |
C |
p. 110-117
8 p.
|
artikel
|
| 10 |
Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
|
Arehart, A.R.
|
|
2013
|
80 |
C |
p. 19-22
4 p.
|
artikel
|
| 11 |
Editorial Board
|
|
|
2013
|
80 |
C |
p. IFC-
1 p.
|
artikel
|
| 12 |
Effect of high current density on the admittance response of interface states in ultrathin MIS tunnel junctions
|
Godet, Christian
|
|
2013
|
80 |
C |
p. 142-151
10 p.
|
artikel
|
| 13 |
Effect of pinch-off current leakage characteristics on microwave power performances of Al x Ga1− x N/GaN HEMTs
|
Peng, M.Z.
|
|
2013
|
80 |
C |
p. 1-4
4 p.
|
artikel
|
| 14 |
HfO2 nanocrystal memory on SiGe channel
|
Lin, Yu-Hsien
|
|
2013
|
80 |
C |
p. 5-9
5 p.
|
artikel
|
| 15 |
IGBT scaling principle toward CMOS compatible wafer processes
|
Tanaka, Masahiro
|
|
2013
|
80 |
C |
p. 118-123
6 p.
|
artikel
|
| 16 |
Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation
|
Baek, Chang-Ki
|
|
2013
|
80 |
C |
p. 10-13
4 p.
|
artikel
|
| 17 |
Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies
|
Chang, Hsu-Yu
|
|
2013
|
80 |
C |
p. 59-62
4 p.
|
artikel
|
| 18 |
k.p based closed form energy band gap and transport electron effective mass model for [100] and [110] relaxed and strained Silicon nanowire
|
Ghosh, Ram Krishna
|
|
2013
|
80 |
C |
p. 124-134
11 p.
|
artikel
|
| 19 |
Low-temperature electrical characterization of junctionless transistors
|
Jeon, Dae-Young
|
|
2013
|
80 |
C |
p. 135-141
7 p.
|
artikel
|
| 20 |
Modelling of MWIR HgCdTe complementary barrier HOT detector
|
Martyniuk, Piotr
|
|
2013
|
80 |
C |
p. 96-104
9 p.
|
artikel
|
| 21 |
Optoelectronic properties of cauliflower like ZnO–ZnO nanorod/p-Si heterostructure
|
Rajabi, M.
|
|
2013
|
80 |
C |
p. 33-37
5 p.
|
artikel
|
| 22 |
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs
|
Goswami, A.
|
|
2013
|
80 |
C |
p. 23-27
5 p.
|
artikel
|
| 23 |
Spin polarized hole transport in poly(2-methoxy, 5-(2-ethylhexyloxy)-1,4-phenylenevinylene)
|
Shukla, Manju
|
|
2013
|
80 |
C |
p. 63-66
4 p.
|
artikel
|
| 24 |
Structural spectral response tuning in organic deep ultraviolet photodetectors
|
Zhu, Lu
|
|
2013
|
80 |
C |
p. 14-18
5 p.
|
artikel
|
| 25 |
Time delay analysis in high speed gate-recessed E-mode InAlN HEMTs
|
Sensale-Rodriguez, Berardi
|
|
2013
|
80 |
C |
p. 67-71
5 p.
|
artikel
|
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