nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Active matrix touch sensor detecting time-constant change implemented by dual-gate IGZO TFTs
|
Tai, Ya-Hsiang |
|
2012 |
72 |
C |
p. 67-72 6 p. |
artikel |
2 |
AlGaN/GaN heterostructure field-effect transistors with multi-Mg x N y /GaN buffer and Photo-CVD SiO2 gate dielectric
|
Lee, K.H. |
|
2012 |
72 |
C |
p. 38-43 6 p. |
artikel |
3 |
Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs
|
Berthet, Fanny |
|
2012 |
72 |
C |
p. 15-21 7 p. |
artikel |
4 |
Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing
|
Varenne, C. |
|
2012 |
72 |
C |
p. 29-37 9 p. |
artikel |
5 |
Comparison of transistor characteristics between excimer-laser and solid-phase crystallized poly-Si thin-film transistors
|
Kimura, Mutsumi |
|
2012 |
72 |
C |
p. 52-55 4 p. |
artikel |
6 |
Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors
|
Chu, Kuei-Yi |
|
2012 |
72 |
C |
p. 22-28 7 p. |
artikel |
7 |
Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface
|
Yan, Dawei |
|
2012 |
72 |
C |
p. 56-59 4 p. |
artikel |
8 |
Early effect of SiGe heterojunction bipolar transistors
|
Xu, Xiao-Bo |
|
2012 |
72 |
C |
p. 1-3 3 p. |
artikel |
9 |
Editorial Board
|
|
|
2012 |
72 |
C |
p. IFC- 1 p. |
artikel |
10 |
Electrical bistable properties of copper phthalocyanine at different deposition rates
|
Onlaor, K. |
|
2012 |
72 |
C |
p. 60-66 7 p. |
artikel |
11 |
Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films
|
Liao, Zhaoliang |
|
2012 |
72 |
C |
p. 4-7 4 p. |
artikel |
12 |
Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films
|
Mähne, H. |
|
2012 |
72 |
C |
p. 73-77 5 p. |
artikel |
13 |
Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature
|
Lee, Sueng Min |
|
2012 |
72 |
C |
p. 88-92 5 p. |
artikel |
14 |
Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
|
Vandooren, A. |
|
2012 |
72 |
C |
p. 82-87 6 p. |
artikel |
15 |
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
|
Ong, S.N. |
|
2012 |
72 |
C |
p. 8-11 4 p. |
artikel |
16 |
Improvement of AZO/p-a-SiC:H contact by the p-μc-Si:H insertion layer and its application to a-Si:H solar cells
|
Chang, Ping-Kuan |
|
2012 |
72 |
C |
p. 48-51 4 p. |
artikel |
17 |
Improvement of n+-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal
|
Wang, M.C. |
|
2012 |
72 |
C |
p. 12-14 3 p. |
artikel |
18 |
Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I–V and low frequency C–V measurement
|
Shin, Ja Sun |
|
2012 |
72 |
C |
p. 78-81 4 p. |
artikel |
19 |
Reduction of the trap density at the organic–organic interface and resultant gate-bias dependency of the mobility in an organic thin-film transistor
|
Bae, Jin-Hyuk |
|
2012 |
72 |
C |
p. 44-47 4 p. |
artikel |