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                             19 results found
no title author magazine year volume issue page(s) type
1 Active matrix touch sensor detecting time-constant change implemented by dual-gate IGZO TFTs Tai, Ya-Hsiang
2012
72 C p. 67-72
6 p.
article
2 AlGaN/GaN heterostructure field-effect transistors with multi-Mg x N y /GaN buffer and Photo-CVD SiO2 gate dielectric Lee, K.H.
2012
72 C p. 38-43
6 p.
article
3 Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs Berthet, Fanny
2012
72 C p. 15-21
7 p.
article
4 Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO2 and O3 sensing Varenne, C.
2012
72 C p. 29-37
9 p.
article
5 Comparison of transistor characteristics between excimer-laser and solid-phase crystallized poly-Si thin-film transistors Kimura, Mutsumi
2012
72 C p. 52-55
4 p.
article
6 Comprehensive study of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors Chu, Kuei-Yi
2012
72 C p. 22-28
7 p.
article
7 Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface Yan, Dawei
2012
72 C p. 56-59
4 p.
article
8 Early effect of SiGe heterojunction bipolar transistors Xu, Xiao-Bo
2012
72 C p. 1-3
3 p.
article
9 Editorial Board 2012
72 C p. IFC-
1 p.
article
10 Electrical bistable properties of copper phthalocyanine at different deposition rates Onlaor, K.
2012
72 C p. 60-66
7 p.
article
11 Electrode engineering for improving resistive switching performance in single crystalline CeO2 thin films Liao, Zhaoliang
2012
72 C p. 4-7
4 p.
article
12 Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films Mähne, H.
2012
72 C p. 73-77
5 p.
article
13 Hot carrier degradation of InGaZnO thin film transistors under light illumination at the elevated temperature Lee, Sueng Min
2012
72 C p. 88-92
5 p.
article
14 Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs Vandooren, A.
2012
72 C p. 82-87
6 p.
article
15 Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs Ong, S.N.
2012
72 C p. 8-11
4 p.
article
16 Improvement of AZO/p-a-SiC:H contact by the p-μc-Si:H insertion layer and its application to a-Si:H solar cells Chang, Ping-Kuan
2012
72 C p. 48-51
4 p.
article
17 Improvement of n+-doped-layer free amorphous silicon thin film solar cells fabricated with CuMg alloy as back contact metal Wang, M.C.
2012
72 C p. 12-14
3 p.
article
18 Modeling and extraction technique for parasitic resistances in MOSFETs Combining DC I–V and low frequency C–V measurement Shin, Ja Sun
2012
72 C p. 78-81
4 p.
article
19 Reduction of the trap density at the organic–organic interface and resultant gate-bias dependency of the mobility in an organic thin-film transistor Bae, Jin-Hyuk
2012
72 C p. 44-47
4 p.
article
                             19 results found
 
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