| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates
|
Lu, Darsen D.
|
|
2011
|
62 |
1 |
p. 31-39
9 p.
|
artikel
|
| 2 |
Analysis of “on” and “off” times for thermally driven VO2 metal-insulator transition nanoscale switching devices
|
Zhang, Yan
|
|
2011
|
62 |
1 |
p. 161-164
4 p.
|
artikel
|
| 3 |
An effective thermal circuit model for electro-thermal simulation of SOI analog circuits
|
Cheng, Ming-C.
|
|
2011
|
62 |
1 |
p. 48-61
14 p.
|
artikel
|
| 4 |
Atomistic and electrical simulations of a GaN–AlN–(4H)SiC heterostructure optically-triggered vertical power semiconductor device
|
Bose, Srikanta
|
|
2011
|
62 |
1 |
p. 5-13
9 p.
|
artikel
|
| 5 |
Bipolar resistive switching of chromium oxide for resistive random access memory
|
Chen, Shih-Cheng
|
|
2011
|
62 |
1 |
p. 40-43
4 p.
|
artikel
|
| 6 |
Bipolar switching characteristics of low-power Geo resistive memory
|
Cheng, C.H.
|
|
2011
|
62 |
1 |
p. 90-93
4 p.
|
artikel
|
| 7 |
Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs
|
Shin, Seung Heon
|
|
2011
|
62 |
1 |
p. 106-109
4 p.
|
artikel
|
| 8 |
Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
|
Miyazaki, Eiji
|
|
2011
|
62 |
1 |
p. 152-155
4 p.
|
artikel
|
| 9 |
Design, fabrication, and evaluation of a 5F–5V prototype of solid-state PANI based supercapacitor
|
Khandpekar, M.M.
|
|
2011
|
62 |
1 |
p. 156-160
5 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2011
|
62 |
1 |
p. IFC-
1 p.
|
artikel
|
| 11 |
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
|
Fu, Yi-Keng
|
|
2011
|
62 |
1 |
p. 142-145
4 p.
|
artikel
|
| 12 |
Efficiency improvement of polymer light-emitting devices using titanium and titanium dioxide as electron injecting layers
|
Aleksandrova, Mariya
|
|
2011
|
62 |
1 |
p. 14-18
5 p.
|
artikel
|
| 13 |
Electrical properties of metal–ferroelectric–insulator–semiconductor structure using Ba x Sr1− x TiO3 for ferroelectric–gate field effect transistor
|
Saif, Ala’eddin A.
|
|
2011
|
62 |
1 |
p. 25-30
6 p.
|
artikel
|
| 14 |
Generalization of the van der Pauw relationship derived from electrostatics
|
Weiss, Jonathan D.
|
|
2011
|
62 |
1 |
p. 123-127
5 p.
|
artikel
|
| 15 |
Germanium vertical Tunneling Field-Effect Transistor
|
Hähnel, D.
|
|
2011
|
62 |
1 |
p. 132-137
6 p.
|
artikel
|
| 16 |
Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS
|
Doria, Rodrigo Trevisoli
|
|
2011
|
62 |
1 |
p. 99-105
7 p.
|
artikel
|
| 17 |
High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
|
Yu, W.
|
|
2011
|
62 |
1 |
p. 185-188
4 p.
|
artikel
|
| 18 |
High quality relaxed Ge layers grown directly on a Si(001) substrate
|
Shah, V.A.
|
|
2011
|
62 |
1 |
p. 189-194
6 p.
|
artikel
|
| 19 |
Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
|
Zhang, Z.W.
|
|
2011
|
62 |
1 |
p. 94-98
5 p.
|
artikel
|
| 20 |
Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs
|
Dey, Aritra
|
|
2011
|
62 |
1 |
p. 19-24
6 p.
|
artikel
|
| 21 |
Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment
|
Yang, Po-Chun
|
|
2011
|
62 |
1 |
p. 128-131
4 p.
|
artikel
|
| 22 |
Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
|
Rodrigues, M.
|
|
2011
|
62 |
1 |
p. 146-151
6 p.
|
artikel
|
| 23 |
Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications
|
Hwang, E.
|
|
2011
|
62 |
1 |
p. 82-89
8 p.
|
artikel
|
| 24 |
Mobility analysis of surface roughness scattering in FinFET devices
|
Lee, Jae Woo
|
|
2011
|
62 |
1 |
p. 195-201
7 p.
|
artikel
|
| 25 |
MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18μm CMOS process
|
Martin, P.
|
|
2011
|
62 |
1 |
p. 115-122
8 p.
|
artikel
|
| 26 |
Physics-based compact model for ultra-scaled FinFETs
|
Yesayan, Ashkhen
|
|
2011
|
62 |
1 |
p. 165-173
9 p.
|
artikel
|
| 27 |
Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric
|
Wolff, K.
|
|
2011
|
62 |
1 |
p. 110-114
5 p.
|
artikel
|
| 28 |
Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors
|
Tirmali, P.M.
|
|
2011
|
62 |
1 |
p. 44-47
4 p.
|
artikel
|
| 29 |
Study of nitrogen impact on V FB–EOT roll-off by varying interfacial SiO2 thickness
|
Cho, Moonju
|
|
2011
|
62 |
1 |
p. 67-71
5 p.
|
artikel
|
| 30 |
Study of Shubnikov–de Haas oscillations and measurement of hole effective mass in compressively strained In X Ga1− X Sb quantum wells
|
Nainani, Aneesh
|
|
2011
|
62 |
1 |
p. 138-141
4 p.
|
artikel
|
| 31 |
The influence of visible light on the gate bias instability of In–Ga–Zn–O thin film transistors
|
Kim, Sangwook
|
|
2011
|
62 |
1 |
p. 77-81
5 p.
|
artikel
|
| 32 |
The performance improvement evaluation for SiGe-based IR detectors
|
Kolahdouz, M.
|
|
2011
|
62 |
1 |
p. 72-76
5 p.
|
artikel
|
| 33 |
Thermally generated leakage current mechanisms of metal-induced laterally crystallized n-type poly-Si TFTs under hot-carrier stress
|
Zhu, Zhen
|
|
2011
|
62 |
1 |
p. 62-66
5 p.
|
artikel
|
| 34 |
Three-dimensional analytic modelling of front and back gate threshold voltages for small geometry fully depleted SOI MOSFET’s
|
Meel, Krishna
|
|
2011
|
62 |
1 |
p. 174-184
11 p.
|
artikel
|
| 35 |
Tunneling coefficient for GaN Schottky barrier diodes
|
Ozbek, A. Merve
|
|
2011
|
62 |
1 |
p. 1-4
4 p.
|
artikel
|
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