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Journal description
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Details for article 17 of 35 found articles
| Title: |
High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate |
| Author: |
Yu, W. Zhang, B. Zhao, Q.T. Hartmann, J.-M. Buca, D. Nichau, A. Lupták, R. Lopes, J.M. Lenk, S. Luysberg, M. Bourdelle, K.K. Wang, X. Mantl, S. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 62 (2011) nr. 1 pages 4 p. |
| Year: |
2011 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 17 of 35 found articles
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