| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Achieving low-V T Ni-FUSI CMOS via lanthanide incorporation in the gate stack
|
Veloso, A.
|
|
2008
|
52 |
9 |
p. 1303-1311
9 p.
|
article
|
| 2 |
Aluminum nitride for heatspreading in RF IC’s
|
La Spina, L.
|
|
2008
|
52 |
9 |
p. 1359-1363
5 p.
|
article
|
| 3 |
A new definition of threshold voltage in Tunnel FETs
|
Boucart, Kathy
|
|
2008
|
52 |
9 |
p. 1318-1323
6 p.
|
article
|
| 4 |
Anodic Ta2O5 for CMOS compatible low voltage electrowetting-on-dielectric device fabrication
|
Li, Y.
|
|
2008
|
52 |
9 |
p. 1382-1387
6 p.
|
article
|
| 5 |
CMOS image sensors: State-of-the-art
|
Theuwissen, Albert J.P.
|
|
2008
|
52 |
9 |
p. 1401-1406
6 p.
|
article
|
| 6 |
Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation
|
Rao, Padmakumar R.
|
|
2008
|
52 |
9 |
p. 1407-1413
7 p.
|
article
|
| 7 |
Editorial Board
|
|
|
2008
|
52 |
9 |
p. IFC-
1 p.
|
article
|
| 8 |
Electrothermal noise analysis in frequency tuning of nanoresonators
|
Jun, Seong Chan
|
|
2008
|
52 |
9 |
p. 1388-1393
6 p.
|
article
|
| 9 |
Examination of the high-frequency capability of carbon nanotube FETs
|
Pulfrey, David L.
|
|
2008
|
52 |
9 |
p. 1324-1328
5 p.
|
article
|
| 10 |
Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
|
Tsamados, Dimitrios
|
|
2008
|
52 |
9 |
p. 1374-1381
8 p.
|
article
|
| 11 |
From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
|
Martin-Bragado, Ignacio
|
|
2008
|
52 |
9 |
p. 1430-1436
7 p.
|
article
|
| 12 |
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
|
Raeissi, B.
|
|
2008
|
52 |
9 |
p. 1274-1279
6 p.
|
article
|
| 13 |
Impact of the gate stack on the electrical performances of 3D multi-channel MOSFET (MCFET) on SOI
|
Bernard, Emilie
|
|
2008
|
52 |
9 |
p. 1297-1302
6 p.
|
article
|
| 14 |
Integration of CVD silicon nanocrystals in a 32Mb NOR flash memory
|
Jacob, S.
|
|
2008
|
52 |
9 |
p. 1452-1459
8 p.
|
article
|
| 15 |
Investigation and improvement of DMOS switches under fast electro-thermal cycle stress
|
Smorodin, Tobias
|
|
2008
|
52 |
9 |
p. 1353-1358
6 p.
|
article
|
| 16 |
Joining microelectronics and microionics: Nerve cells and brain tissue on semiconductor chips
|
Fromherz, Peter
|
|
2008
|
52 |
9 |
p. 1364-1373
10 p.
|
article
|
| 17 |
Long term charge retention dynamics of SONOS cells
|
Arreghini, A.
|
|
2008
|
52 |
9 |
p. 1460-1466
7 p.
|
article
|
| 18 |
Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates
|
Pham, A.T.
|
|
2008
|
52 |
9 |
p. 1437-1442
6 p.
|
article
|
| 19 |
Multi-gate devices for the 32nm technology node and beyond
|
Collaert, N.
|
|
2008
|
52 |
9 |
p. 1291-1296
6 p.
|
article
|
| 20 |
Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator
|
Badila-Ciressan, N.D.
|
|
2008
|
52 |
9 |
p. 1394-1400
7 p.
|
article
|
| 21 |
105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers
|
Le Royer, C.
|
|
2008
|
52 |
9 |
p. 1285-1290
6 p.
|
article
|
| 22 |
45nm/32nm CMOS – Challenge and perspective
|
Ishimaru, Kazunari
|
|
2008
|
52 |
9 |
p. 1266-1273
8 p.
|
article
|
| 23 |
On a computationally efficient approach to boron-interstitial clustering
|
Schermer, J.
|
|
2008
|
52 |
9 |
p. 1424-1429
6 p.
|
article
|
| 24 |
Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
|
Kakushima, K.
|
|
2008
|
52 |
9 |
p. 1280-1284
5 p.
|
article
|
| 25 |
Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond
|
Pirovano, A.
|
|
2008
|
52 |
9 |
p. 1467-1472
6 p.
|
article
|
| 26 |
Phonon-scattering effects in CNT-FETs with different dimensions and dielectric materials
|
Grassi, Roberto
|
|
2008
|
52 |
9 |
p. 1329-1335
7 p.
|
article
|
| 27 |
Punch-through impact ionization MOSFET (PIMOS): From device principle to applications
|
Moselund, K.E.
|
|
2008
|
52 |
9 |
p. 1336-1344
9 p.
|
article
|
| 28 |
Si-nanowire CMOS inverter logic fabricated using gate-all-around (GAA) devices and top-down approach
|
Buddharaju, K.D.
|
|
2008
|
52 |
9 |
p. 1312-1317
6 p.
|
article
|
| 29 |
Single-grain Si thin-film transistors SPICE model, analog and RF circuit applications
|
Baiano, A.
|
|
2008
|
52 |
9 |
p. 1345-1352
8 p.
|
article
|
| 30 |
Special issue devoted to the ESSDERC’07 conference
|
Schmitz, Jurriaan
|
|
2008
|
52 |
9 |
p. 1265-
1 p.
|
article
|
| 31 |
Status and challenges of phase change memory modeling
|
Lacaita, A.L.
|
|
2008
|
52 |
9 |
p. 1443-1451
9 p.
|
article
|
| 32 |
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
|
Sangiorgi, Enrico
|
|
2008
|
52 |
9 |
p. 1414-1423
10 p.
|
article
|
Journal description