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                                       Details for article 24 of 32 found articles
 
 
  Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
 
 
Title: Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion
Author: Kakushima, K.
Okamoto, K.
Adachi, M.
Tachi, K.
Ahmet, P.
Tsutsui, K.
Sugii, N.
Hattori, T.
Iwai, H.
Appeared in: Solid-state electronics
Paging: Volume 52 (2008) nr. 9 pages 5 p.
Year: 2008
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 24 of 32 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands