Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond
Title:
Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond
Author:
Pirovano, A. Pellizzer, F. Tortorelli, I. Riganó, A. Harrigan, R. Magistretti, M. Petruzza, P. Varesi, E. Redaelli, A. Erbetta, D. Marangon, T. Bedeschi, F. Fackenthal, R. Atwood, G. Bez, R.