|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 21 of 32 found articles
| Title: |
105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers |
| Author: |
Le Royer, C. Clavelier, L. Tabone, C. Romanjek, K. Deguet, C. Sanchez, L. Hartmann, J.-M. Roure, M.-C. Grampeix, H. Soliveres, S. Le Carval, G. Truche, R. Pouydebasque, A. Vinet, M. Deleonibus, S. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 52 (2008) nr. 9 pages 6 p. |
| Year: |
2008 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 21 of 32 found articles
| << previous | next >> |