| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys
|
Lucovsky, G
|
|
2002
|
46 |
11 |
p. 1687-1697
11 p.
|
artikel
|
| 2 |
Analysis of thermal noise in scaled MOS devices and RF circuits
|
Spedo, Sergio
|
|
2002
|
46 |
11 |
p. 1933-1939
7 p.
|
artikel
|
| 3 |
A new high injection efficiency non-volatile memory cell: BipFlash
|
Esseni, David
|
|
2002
|
46 |
11 |
p. 1739-1747
9 p.
|
artikel
|
| 4 |
An expression for the uncertainty introduced by the discrete sampling of a solar cell’s J–V curve
|
McIntosh, Keith R.
|
|
2002
|
46 |
11 |
p. 2009-2011
3 p.
|
artikel
|
| 5 |
A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs
|
Chen, T.P
|
|
2002
|
46 |
11 |
p. 2013-2016
4 p.
|
artikel
|
| 6 |
A numerical study of ballistic transport in a nanoscale MOSFET
|
Rhew, Jung-Hoon
|
|
2002
|
46 |
11 |
p. 1899-1906
8 p.
|
artikel
|
| 7 |
Breakdown and stress-induced oxide degradation mechanisms in MOSFETs
|
Chen, J.H
|
|
2002
|
46 |
11 |
p. 1965-1974
10 p.
|
artikel
|
| 8 |
Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy
|
Miyazaki, S
|
|
2002
|
46 |
11 |
p. 1679-1685
7 p.
|
artikel
|
| 9 |
Corrigendum to “GaN-based modulation doped FETs and UV detectors” [Solid-State Electronics 2002;46(2):157–202]
|
Morkoç, Hadis
|
|
2002
|
46 |
11 |
p. 2017-
1 p.
|
artikel
|
| 10 |
Device and circuit performance of SiGe/Si MOSFETs
|
Badcock, S.G
|
|
2002
|
46 |
11 |
p. 1925-1932
8 p.
|
artikel
|
| 11 |
Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs
|
Song, Young-Joo
|
|
2002
|
46 |
11 |
p. 1983-1989
7 p.
|
artikel
|
| 12 |
Electron emission yield of induced photoemission effect in thin ITO layers
|
Olesik, Jadwiga
|
|
2002
|
46 |
11 |
p. 1913-1918
6 p.
|
artikel
|
| 13 |
Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices
|
Johnson, R.S
|
|
2002
|
46 |
11 |
p. 1799-1805
7 p.
|
artikel
|
| 14 |
Energetics of oxygen species in crystalline and amorphous SiO2: a first-principles investigation
|
Bongiorno, Angelo
|
|
2002
|
46 |
11 |
p. 1873-1878
6 p.
|
artikel
|
| 15 |
Extraction of deep trap parameters from photocurrent transients by two-dimensional spectral analysis
|
Pawlowski, Michal
|
|
2002
|
46 |
11 |
p. 1879-1885
7 p.
|
artikel
|
| 16 |
Fabrication of single-electron transistors and circuits using SOIs
|
Ono, Yukinori
|
|
2002
|
46 |
11 |
p. 1723-1727
5 p.
|
artikel
|
| 17 |
High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN
|
Papanicolaou, N.A
|
|
2002
|
46 |
11 |
p. 1975-1981
7 p.
|
artikel
|
| 18 |
Hydrogen-related hole capture and positive charge build up in buried oxides
|
Rivera, A.
|
|
2002
|
46 |
11 |
p. 1775-1785
11 p.
|
artikel
|
| 19 |
Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source
|
Hsieh, W.T
|
|
2002
|
46 |
11 |
p. 1949-1952
4 p.
|
artikel
|
| 20 |
Influence of the topology on thermal dissipation in high power density GaAs devices
|
Camps, T
|
|
2002
|
46 |
11 |
p. 1919-1924
6 p.
|
artikel
|
| 21 |
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides
|
Wu, E
|
|
2002
|
46 |
11 |
p. 1787-1798
12 p.
|
artikel
|
| 22 |
Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors
|
Crupi, F
|
|
2002
|
46 |
11 |
p. 1807-1813
7 p.
|
artikel
|
| 23 |
Memory properties of Si+ implanted gate oxides: from MOS capacitors to nvSRAM
|
von Borany, J
|
|
2002
|
46 |
11 |
p. 1729-1737
9 p.
|
artikel
|
| 24 |
Mist deposited high-k dielectrics for next generation MOS gates
|
Lee, D.-O
|
|
2002
|
46 |
11 |
p. 1671-1677
7 p.
|
artikel
|
| 25 |
Modeling of abnormal capacitance–voltage characteristics observed in MOS transistor with ultra-thin gate oxide
|
Hsu, Yung-Lung
|
|
2002
|
46 |
11 |
p. 1941-1943
3 p.
|
artikel
|
| 26 |
Modeling of anomalous SILC in flash memories based on tunneling at multiple defects
|
Ielmini, Daniele
|
|
2002
|
46 |
11 |
p. 1749-1756
8 p.
|
artikel
|
| 27 |
Modeling the zero and forward bias operation of PIN diodes for high-frequency applications
|
Drozdovski, N.V.
|
|
2002
|
46 |
11 |
p. 2001-2008
8 p.
|
artikel
|
| 28 |
Monte Carlo simulation of electron mobility in silicon-on-insulator structures
|
Gámiz, F
|
|
2002
|
46 |
11 |
p. 1715-1721
7 p.
|
artikel
|
| 29 |
Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs
|
Pretet, J
|
|
2002
|
46 |
11 |
p. 1699-1707
9 p.
|
artikel
|
| 30 |
Non-radiative recombination at reconstructed Si surfaces
|
Dittrich, T
|
|
2002
|
46 |
11 |
p. 1863-1872
10 p.
|
artikel
|
| 31 |
[No title]
|
Sangiorgi, Enrico
|
|
2002
|
46 |
11 |
p. 1669-
1 p.
|
artikel
|
| 32 |
NROMTM––a new technology for non-volatile memory products
|
Bloom, Ilan
|
|
2002
|
46 |
11 |
p. 1757-1763
7 p.
|
artikel
|
| 33 |
On the capacitance of metal/high-k dielectric material stack/silicon structures
|
Jiang, J
|
|
2002
|
46 |
11 |
p. 1991-1995
5 p.
|
artikel
|
| 34 |
Oxide thickness extraction methods in the nanometer range for statistical measurements
|
Leroux, C
|
|
2002
|
46 |
11 |
p. 1849-1854
6 p.
|
artikel
|
| 35 |
Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si
|
Atanassova, E
|
|
2002
|
46 |
11 |
p. 1887-1898
12 p.
|
artikel
|
| 36 |
Proton trapping in SiO2 layers thermally grown on Si and SiC
|
Afanas’ev, V.V.
|
|
2002
|
46 |
11 |
p. 1815-1823
9 p.
|
artikel
|
| 37 |
Quantitative two-step hydrogen model of SiO2 gate oxide breakdown
|
Suñé, Jordi
|
|
2002
|
46 |
11 |
p. 1825-1837
13 p.
|
artikel
|
| 38 |
Relation between hole traps and hydrogenous species in silicon dioxides
|
Zhang, J.F.
|
|
2002
|
46 |
11 |
p. 1839-1847
9 p.
|
artikel
|
| 39 |
Reliability implications in advanced embedded two-transistor-Fowler–Nordheim-NOR flash memory devices
|
Scarpa, A.
|
|
2002
|
46 |
11 |
p. 1765-1773
9 p.
|
artikel
|
| 40 |
Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry
|
Camara, N
|
|
2002
|
46 |
11 |
p. 1959-1963
5 p.
|
artikel
|
| 41 |
Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process
|
Yuan, X
|
|
2002
|
46 |
11 |
p. 1907-1912
6 p.
|
artikel
|
| 42 |
The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs
|
Jiang, Wen-Jang
|
|
2002
|
46 |
11 |
p. 1945-1948
4 p.
|
artikel
|
| 43 |
The effect of vertical emitter ballasting resistors on the emitter current crowding effect in heterojunction bipolar transistors
|
Chang, Yuchun
|
|
2002
|
46 |
11 |
p. 1997-2000
4 p.
|
artikel
|
| 44 |
Transient effects in PD SOI MOSFETs and potential DRAM applications
|
Okhonin, S.
|
|
2002
|
46 |
11 |
p. 1709-1713
5 p.
|
artikel
|
| 45 |
Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode
|
Levinshtein, Michael E
|
|
2002
|
46 |
11 |
p. 1953-1957
5 p.
|
artikel
|
| 46 |
Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions
|
Borsoni, G
|
|
2002
|
46 |
11 |
p. 1855-1862
8 p.
|
artikel
|
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