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                                       Details for article 25 of 46 found articles
 
 
  Modeling of abnormal capacitance–voltage characteristics observed in MOS transistor with ultra-thin gate oxide
 
 
Title: Modeling of abnormal capacitance–voltage characteristics observed in MOS transistor with ultra-thin gate oxide
Author: Hsu, Yung-Lung
Fang, Yean-Kuen
Tsao, Feng-Cherng
Kuo, Fu-Jung
Ho, Yens
Appeared in: Solid-state electronics
Paging: Volume 46 (2002) nr. 11 pages 3 p.
Year: 2002
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 25 of 46 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands