| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A novel technique for RTP annealing of compound semiconductors
|
Fu, M
|
|
1998
|
42 |
12 |
p. 2335-2340
6 p.
|
artikel
|
| 2 |
A review of junction field effect transistors for high-temperature and high-power electronics
|
Zolper, J.C.
|
|
1998
|
42 |
12 |
p. 2153-2156
4 p.
|
artikel
|
| 3 |
Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers
|
Neudeck, P.G
|
|
1998
|
42 |
12 |
p. 2157-2164
8 p.
|
artikel
|
| 4 |
Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas
|
Cho, Hyun
|
|
1998
|
42 |
12 |
p. 2277-2281
5 p.
|
artikel
|
| 5 |
Comparison of plasma etch techniques for III–V nitrides
|
Shul, R.J
|
|
1998
|
42 |
12 |
p. 2259-2267
9 p.
|
artikel
|
| 6 |
Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics
|
Ren, F
|
|
1998
|
42 |
12 |
p. 2177-2181
5 p.
|
artikel
|
| 7 |
Design methodology and simulation tool for floating ring termination technique
|
Stefanov, Evgueniy
|
|
1998
|
42 |
12 |
p. 2251-2257
7 p.
|
artikel
|
| 8 |
Editorial
|
|
|
1998
|
42 |
12 |
p. 2117-
1 p.
|
artikel
|
| 9 |
Electronic properties of diamond for high-power device applications
|
Yater, J.E
|
|
1998
|
42 |
12 |
p. 2225-2232
8 p.
|
artikel
|
| 10 |
GaN based transistors for high power applications 1 This paper was first published in the Material Research Society Symposium Proceedings, Symposium E, Fall, 1997. 1
|
Shur, M.S.
|
|
1998
|
42 |
12 |
p. 2131-2138
8 p.
|
artikel
|
| 11 |
High-density plasma etch selectivity for the III–V nitrides
|
Shul, R.J
|
|
1998
|
42 |
12 |
p. 2269-2276
8 p.
|
artikel
|
| 12 |
High frequency capacitance measurements on metal–insulator–semiconductor structures in thermal non-equilibrium condition
|
Sadeghi, M.
|
|
1998
|
42 |
12 |
p. 2233-2238
6 p.
|
artikel
|
| 13 |
High temperature ohmic contacts to 3C–silicon carbide films
|
Jacob, C
|
|
1998
|
42 |
12 |
p. 2329-2334
6 p.
|
artikel
|
| 14 |
4H-SiC power devices for use in power electronic motor control
|
Casady, J.B
|
|
1998
|
42 |
12 |
p. 2165-2176
12 p.
|
artikel
|
| 15 |
Hydrogen “doped” thin film diamond field effect transistors for high power applications
|
Looi, Hui Jin
|
|
1998
|
42 |
12 |
p. 2215-2223
9 p.
|
artikel
|
| 16 |
ICP etching of SiC
|
Wang, J.J
|
|
1998
|
42 |
12 |
p. 2283-2288
6 p.
|
artikel
|
| 17 |
Index
|
|
|
1998
|
42 |
12 |
p. XXVII-XXXII
nvt p.
|
artikel
|
| 18 |
Index
|
|
|
1998
|
42 |
12 |
p. III-XXVI
nvt p.
|
artikel
|
| 19 |
Influence of silicon crystal defects and contamination on the electrical behavior of power devices
|
Schulze, H.-J
|
|
1998
|
42 |
12 |
p. 2187-2197
11 p.
|
artikel
|
| 20 |
Magnetron sputtering synthesis of silicon–carbon films: structural and optical characterization
|
Kerdiles, S
|
|
1998
|
42 |
12 |
p. 2315-2320
6 p.
|
artikel
|
| 21 |
Material requirements for high voltage, high power IGBT devices
|
Zehringer, R.
|
|
1998
|
42 |
12 |
p. 2139-2151
13 p.
|
artikel
|
| 22 |
Megawatt solid-state electronics
|
Brown, E.R
|
|
1998
|
42 |
12 |
p. 2119-2130
12 p.
|
artikel
|
| 23 |
MicroRaman study of crystallographic defects in SiC crystals
|
Martı́n, E.
|
|
1998
|
42 |
12 |
p. 2309-2314
6 p.
|
artikel
|
| 24 |
Multilayer diamond heat spreaders for electronic power devices
|
Jagannadham, K
|
|
1998
|
42 |
12 |
p. 2199-2208
10 p.
|
artikel
|
| 25 |
Nitride based high power devices: design and fabrication issues
|
Bandić, Z.Z
|
|
1998
|
42 |
12 |
p. 2289-2294
6 p.
|
artikel
|
| 26 |
Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications
|
Kopf, R.F
|
|
1998
|
42 |
12 |
p. 2239-2250
12 p.
|
artikel
|
| 27 |
Supersonic jet epitaxy of silicon carbide on silicon using methylsilane
|
Ustin, S.A.
|
|
1998
|
42 |
12 |
p. 2321-2327
7 p.
|
artikel
|
| 28 |
Surface and interface properties of PdCr/SiC Schottky diode gas sensor annealed at 425°C
|
Chen, Liang-Yu
|
|
1998
|
42 |
12 |
p. 2209-2214
6 p.
|
artikel
|
| 29 |
Thermo-mechanical simulation of a multichip press-packed IGBT
|
Pirondi, A
|
|
1998
|
42 |
12 |
p. 2303-2307
5 p.
|
artikel
|
| 30 |
Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy
|
Hickman, R
|
|
1998
|
42 |
12 |
p. 2183-2185
3 p.
|
artikel
|
| 31 |
Voids in silicon power devices
|
Raineri, V.
|
|
1998
|
42 |
12 |
p. 2295-2301
7 p.
|
artikel
|
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