| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analysis of breakdown voltage for GaN MIS-HEMT with various composite field plate configurations and passivation layers
|
Langpoklakpam, Catherine
|
|
|
216 |
C |
p.
|
article
|
| 2 |
Analysis of electrical and hysteresis characteristics of flexible OTFT using solution-processable DPP-DTT polymer and Parylene-C
|
Ko, Yoojeong
|
|
|
216 |
C |
p.
|
article
|
| 3 |
Analysis of ferroelectric properties of ALD-Hf0.5Zr0.5O2 thin films according to oxygen sources
|
Lee, Seungbin
|
|
|
216 |
C |
p.
|
article
|
| 4 |
Analysis of Mechanical Stress on Fowler-Nordheim Tunneling for Program Operation in 3D NAND Flash Memory
|
Kim, Donghyun
|
|
|
216 |
C |
p.
|
article
|
| 5 |
Analysis of metal and zinc oxide semiconductor interface resistance using transmission line method
|
Lee, Do-Yeon
|
|
|
216 |
C |
p.
|
article
|
| 6 |
An ultra low power spiking neural encoder of microwave signals
|
Loyez, Christophe
|
|
|
216 |
C |
p.
|
article
|
| 7 |
A single neural network global I-V and C-V parameter extractor for BSIM-CMG compact model
|
Chen, Jen-Hao
|
|
|
216 |
C |
p.
|
article
|
| 8 |
A wireless neural recording microsystem with operator-based spike detection
|
Lim, Joonyoung
|
|
|
216 |
C |
p.
|
article
|
| 9 |
A wireless stimulator system-on-chip with an optically writable ID for addressable cortical microimplants
|
Lee, Chae-Eun
|
|
|
216 |
C |
p.
|
article
|
| 10 |
BCl3/Cl2 plasma etching process to fabricate a ferroelectric gate structure for device integration
|
Kang, Bohyeon
|
|
|
216 |
C |
p.
|
article
|
| 11 |
Bridge-contact resistance method for precise evaluation of electrical contacts of nano-scale semiconductor devices
|
Yun, Jiyeong
|
|
|
216 |
C |
p.
|
article
|
| 12 |
Demonstration of bias scheme for ferroelectric field-effect transistor (FeFET) based AND array operation
|
Kim, Shinhee
|
|
|
216 |
C |
p.
|
article
|
| 13 |
Editorial Board
|
|
|
|
216 |
C |
p.
|
article
|
| 14 |
Impact of JFET width on conduction characteristic for p-channel SiC IGBT
|
Xu, Kunhui
|
|
|
216 |
C |
p.
|
article
|
| 15 |
Impact of work function metal stacks on the performance and reliability of multi-Vth RMG CMOS technology
|
Franco, J.
|
|
|
216 |
C |
p.
|
article
|
| 16 |
Improvement of instrumentation consistency using DUV filter in Spectroscopic Ellipsometry
|
Gim, Yu-Seong
|
|
|
216 |
C |
p.
|
article
|
| 17 |
Influence of RF power in the sputter deposition of amorphous InGaZnO film on the transient drain current of amorphous InGaZnO thin-film transistors
|
Lee, Da Yeon
|
|
|
216 |
C |
p.
|
article
|
| 18 |
Multi-level storage in cleaved-gate ferroelectric FETs investigated by 3D phase-field-based quantum transport simulation
|
Jang, Jeonghwan
|
|
|
216 |
C |
p.
|
article
|
| 19 |
NO2 gas response improvement method by adopting oxygen vacancy controlled In2O3 double sensing layers
|
Choi, Kangwook
|
|
|
216 |
C |
p.
|
article
|
| 20 |
Performance improvement of multilayered ZnO/SnO2 thin-film transistors by varying supercycles and growth temperatures
|
Park, Chan-Yeong
|
|
|
216 |
C |
p.
|
article
|
| 21 |
Pinning voltage model of vertical pinned photodiode for Dual-Pixel image sensor
|
Ahn, Hyeon Soo
|
|
|
216 |
C |
p.
|
article
|
| 22 |
Proposed package type for evaluating reliability of HBM Memory
|
Lee, Dongsoo
|
|
|
216 |
C |
p.
|
article
|
| 23 |
Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses
|
Kim, Sang-Kon
|
|
|
216 |
C |
p.
|
article
|
| 24 |
Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition
|
Lan, Yue
|
|
|
216 |
C |
p.
|
article
|
| 25 |
Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs
|
Singh, Khoirom Johnson
|
|
|
216 |
C |
p.
|
article
|
Journal description