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Journal description
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Details for article 24 of 25 found articles
| Title: |
Top-gate thin-film transistors with amorphous ZnSnO channel layers prepared by pulsed plasma deposition |
| Author: |
Lan, Yue Fanxin, Meng |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 216 () nr. C pages p. |
| Year: |
2024 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 24 of 25 found articles
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