| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A low cost and simple structured WOLED device based on exciplex host and full fluorescent materials
|
Chang, yiyang
|
|
|
208 |
C |
p.
|
artikel
|
| 2 |
A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping
|
Bendra, M.
|
|
|
208 |
C |
p.
|
artikel
|
| 3 |
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions
|
Balestra, Luigi
|
|
|
208 |
C |
p.
|
artikel
|
| 4 |
A novel robust SCR with high holding voltage for on-chip ESD protection of industry-level bus
|
Liu, Yujie
|
|
|
208 |
C |
p.
|
artikel
|
| 5 |
A simple fabrication method of passive-matrix organic light-emitting diode display without a photolithography process
|
Lee, Hangil
|
|
|
208 |
C |
p.
|
artikel
|
| 6 |
Dopant segregation effects on ohmic contact formation in nanoscale silicon
|
Nagarajan, Soundarya
|
|
|
208 |
C |
p.
|
artikel
|
| 7 |
Editorial Board
|
|
|
|
208 |
C |
p.
|
artikel
|
| 8 |
Electrical characterization of SOI pMOS device leakage
|
Bosch, D.
|
|
|
208 |
C |
p.
|
artikel
|
| 9 |
Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications
|
Silva, V.C.P.
|
|
|
208 |
C |
p.
|
artikel
|
| 10 |
Evaluation of Ti/Al/Ni/Au ohmic contact to n-AlGaN with different Ti/Al thickness for deep ultraviolet light emitting diode
|
Yang, Yin
|
|
|
208 |
C |
p.
|
artikel
|
| 11 |
Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures
|
de Souza, Michelly
|
|
|
208 |
C |
p.
|
artikel
|
| 12 |
Experimental study of MISHEMT from 450 K down to 200 K for analog applications
|
Perina, Welder F.
|
|
|
208 |
C |
p.
|
artikel
|
| 13 |
GaN hot electron transistors: From ballistic to coherent
|
Daulton, J.W.
|
|
|
208 |
C |
p.
|
artikel
|
| 14 |
Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM
|
Spelta, Tarek
|
|
|
208 |
C |
p.
|
artikel
|
| 15 |
Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors
|
da Silva, Lucas Mota Barbosa
|
|
|
208 |
C |
p.
|
artikel
|
| 16 |
Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
|
Han, Yi
|
|
|
208 |
C |
p.
|
artikel
|
| 17 |
In-situ fluorine-doped ZnSnO thin film and thin-film transistor
|
Yin, Xuemei
|
|
|
208 |
C |
p.
|
artikel
|
| 18 |
Junctionless nanowire transistors effective channel length extraction through capacitance characteristics
|
Silva, Everton M.
|
|
|
208 |
C |
p.
|
artikel
|
| 19 |
Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films
|
Saini, B.
|
|
|
208 |
C |
p.
|
artikel
|
| 20 |
Monte Carlo study of electron–electron scattering effects in FET channels
|
Gull, Josef
|
|
|
208 |
C |
p.
|
artikel
|
| 21 |
On noise-induced transient bit flips in subthreshold SRAM
|
Van Brandt, Léopold
|
|
|
208 |
C |
p.
|
artikel
|
| 22 |
Perovskite-based optoelectronic artificial synaptic thin-film transistor
|
Cao, Y.X.
|
|
|
208 |
C |
p.
|
artikel
|
| 23 |
Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer
|
Yang, Hui
|
|
|
208 |
C |
p.
|
artikel
|
| 24 |
Simulation of BioGFET sensors using TCAD
|
Fuente-Zapico, Elsa
|
|
|
208 |
C |
p.
|
artikel
|
| 25 |
Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance
|
Shashidhara, M.
|
|
|
208 |
C |
p.
|
artikel
|
| 26 |
Study of silicon-oxide RRAM devices based on complex impedance spectroscopy
|
Wiśniewski, Piotr
|
|
|
208 |
C |
p.
|
artikel
|
| 27 |
Sub micro-accelerometer based on spintronic technology: A design optimization
|
Meo, A.
|
|
|
208 |
C |
p.
|
artikel
|
| 28 |
Understanding the Impact of Extension Region on Stacked Nanosheet FET: Analog Design Perspective
|
Srivastava, Shobhit
|
|
|
208 |
C |
p.
|
artikel
|
| 29 |
Undoped junctionless EZ-FET: Model and measurements
|
Zerhouni Abdou, N.
|
|
|
208 |
C |
p.
|
artikel
|
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