Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM
Titel:
Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM
Auteur:
Spelta, Tarek Veillerot, Marc Martinez, Eugénie Mariolle, Denis Templier, Roselyne Chevalier, Nicolas Fernandes Paes Pinto Rocha, Pedro Salem, Bassem Vauche, Laura Hyot, Bérangère