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                             29 results found
no title author magazine year volume issue page(s) type
1 A low cost and simple structured WOLED device based on exciplex host and full fluorescent materials Chang, yiyang
208 C p.
 article
2 A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping Bendra, M.
208 C p.
 article
3 Anomalous increase of leakage current in epoxy moulding compounds under wet conditions Balestra, Luigi
208 C p.
 article
4 A novel robust SCR with high holding voltage for on-chip ESD protection of industry-level bus Liu, Yujie
208 C p.
 article
5 A simple fabrication method of passive-matrix organic light-emitting diode display without a photolithography process Lee, Hangil
208 C p.
 article
6 Dopant segregation effects on ohmic contact formation in nanoscale silicon Nagarajan, Soundarya
208 C p.
 article
7 Editorial Board
208 C p.
 article
8 Electrical characterization of SOI pMOS device leakage Bosch, D.
208 C p.
 article
9 Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications Silva, V.C.P.
208 C p.
 article
10 Evaluation of Ti/Al/Ni/Au ohmic contact to n-AlGaN with different Ti/Al thickness for deep ultraviolet light emitting diode Yang, Yin
208 C p.
 article
11 Experimental assessment of gate-induced drain leakage in SOI stacked nanowire and nanosheet nMOSFETs at high temperatures de Souza, Michelly
208 C p.
 article
12 Experimental study of MISHEMT from 450 K down to 200 K for analog applications Perina, Welder F.
208 C p.
 article
13 GaN hot electron transistors: From ballistic to coherent Daulton, J.W.
208 C p.
 article
14 Impact of etching process on Al2O3/GaN interface for MOSc-HEMT devices combining ToF-SIMS, HAXPES and AFM Spelta, Tarek
208 C p.
 article
15 Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors da Silva, Lucas Mota Barbosa
208 C p.
 article
16 Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide Han, Yi
208 C p.
 article
17 In-situ fluorine-doped ZnSnO thin film and thin-film transistor Yin, Xuemei
208 C p.
 article
18 Junctionless nanowire transistors effective channel length extraction through capacitance characteristics Silva, Everton M.
208 C p.
 article
19 Mechanism of polarization “Wake-Up” in ferroelectric Hafnia-Zirconia thin films Saini, B.
208 C p.
 article
20 Monte Carlo study of electron–electron scattering effects in FET channels Gull, Josef
208 C p.
 article
21 On noise-induced transient bit flips in subthreshold SRAM Van Brandt, Léopold
208 C p.
 article
22 Perovskite-based optoelectronic artificial synaptic thin-film transistor Cao, Y.X.
208 C p.
 article
23 Preparation and electrical characteristics of transparent thin film transistors with sputtered aluminum and phosphorus co-doped indium-zinc-oxide channel layer Yang, Hui
208 C p.
 article
24 Simulation of BioGFET sensors using TCAD Fuente-Zapico, Elsa
208 C p.
 article
25 Spin-orbit torque magnetic tunnel junction based on 2-D materials: Impact of bias-layer on device performance Shashidhara, M.
208 C p.
 article
26 Study of silicon-oxide RRAM devices based on complex impedance spectroscopy Wiśniewski, Piotr
208 C p.
 article
27 Sub micro-accelerometer based on spintronic technology: A design optimization Meo, A.
208 C p.
 article
28 Understanding the Impact of Extension Region on Stacked Nanosheet FET: Analog Design Perspective Srivastava, Shobhit
208 C p.
 article
29 Undoped junctionless EZ-FET: Model and measurements Zerhouni Abdou, N.
208 C p.
 article
                             29 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands