| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fully integrated half-bridge driver circuit in All-GaN GAN-IC technology
|
Chatterjee, Urmimala
|
|
|
207 |
C |
p.
|
artikel
|
| 2 |
Amorphous GaOx based charge trap memory device for neuromorphic applications
|
Van Dijck, C.
|
|
|
207 |
C |
p.
|
artikel
|
| 3 |
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs
|
Fernandez, Julian G.
|
|
|
207 |
C |
p.
|
artikel
|
| 4 |
Analysis of trap distribution and NBTI degradation in Al2O3/SiO2 dielectric stack
|
Yan, Yiyi
|
|
|
207 |
C |
p.
|
artikel
|
| 5 |
Analytical modeling of negative capacitance transistor based ultra low power Schmitt trigger
|
Keerthi, Guntupalli
|
|
|
207 |
C |
p.
|
artikel
|
| 6 |
An eco-friendly bandgap engineering of semiconductor graphene oxide
|
Cruz Salazar, Y.
|
|
|
207 |
C |
p.
|
artikel
|
| 7 |
A novel substrate Voltage-assisted RESURF technique in SOI LDMOS with a heavily doped drift region
|
Li, Man
|
|
|
207 |
C |
p.
|
artikel
|
| 8 |
Assessment of a universal logic gate and a full adder circuit based on CMOS-memristor technology
|
Guitarra, S.
|
|
|
207 |
C |
p.
|
artikel
|
| 9 |
Bipolar nonlinear photo-controlled thyristor with variable-resistance effect
|
Wang, Yang
|
|
|
207 |
C |
p.
|
artikel
|
| 10 |
Compact I-V model for back-gated and double-gated TMD FETs
|
Mounir, Ahmed
|
|
|
207 |
C |
p.
|
artikel
|
| 11 |
Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures
|
Roemer, Christian
|
|
|
207 |
C |
p.
|
artikel
|
| 12 |
Comparison of Heat Sinks in Back-End of Line to reduce Self-Heating in 22FDX® MOSFETs
|
Halder, Arka
|
|
|
207 |
C |
p.
|
artikel
|
| 13 |
Corrigendum to “In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets” [Solid-State Electron. 201(2023) 10859]
|
Cretu, B.
|
|
|
207 |
C |
p.
|
artikel
|
| 14 |
3D backside integration of FinFETs: Is there an impact on LF noise?
|
Simoen, Eddy
|
|
|
207 |
C |
p.
|
artikel
|
| 15 |
Editorial Board
|
|
|
|
207 |
C |
p.
|
artikel
|
| 16 |
Experimental analysis of variability in WS2-based devices for hardware security
|
Vatalaro, M.
|
|
|
207 |
C |
p.
|
artikel
|
| 17 |
Exploitation of OTFTs variability for PUFs implementation and impact of aging
|
Claramunt, S.
|
|
|
207 |
C |
p.
|
artikel
|
| 18 |
High-k/InGaAs interface defects at cryogenic temperature
|
Cherkaoui, K.
|
|
|
207 |
C |
p.
|
artikel
|
| 19 |
Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors
|
Saludes-Tapia, M.
|
|
|
207 |
C |
p.
|
artikel
|
| 20 |
Improved self-heating extraction with RF technique at cryogenic temperatures
|
Vanbrabant, Martin
|
|
|
207 |
C |
p.
|
artikel
|
| 21 |
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques
|
Asanovski, Ruben
|
|
|
207 |
C |
p.
|
artikel
|
| 22 |
Liquid-gate 2D material-on-insulator transistors for sensing applications
|
Marquez, Carlos
|
|
|
207 |
C |
p.
|
artikel
|
| 23 |
Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses
|
Jungemann, C.
|
|
|
207 |
C |
p.
|
artikel
|
| 24 |
Reliability characterization of non-hysteretic charge amplification in MFIM device
|
Engl, Moritz
|
|
|
207 |
C |
p.
|
artikel
|
| 25 |
Role of interface and bulk traps on the capacitance–voltage characteristics of WS2/Al2O3/Si capacitors
|
Intonti, Kimberly
|
|
|
207 |
C |
p.
|
artikel
|
| 26 |
Role of interface/border traps on the threshold voltage instability of SiC power transistors
|
Volosov, V.
|
|
|
207 |
C |
p.
|
artikel
|
| 27 |
Schottky barrier diode consisting of van der Waals heterojunction of MoS2 film and PtCoO2 contact
|
Urakami, Noriyuki
|
|
|
207 |
C |
p.
|
artikel
|
| 28 |
Steep subthreshold slope “Dual-gate PN-body tied SOI-FET” – First fabrication results –
|
Yonezaki, Haruki
|
|
|
207 |
C |
p.
|
artikel
|
| 29 |
TCAD assisted design of the Doherty Power Amplifier
|
Donati Guerrieri, Simona
|
|
|
207 |
C |
p.
|
artikel
|
| 30 |
Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height
|
Lin, Ya-Xun
|
|
|
207 |
C |
p.
|
artikel
|
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