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26 results found

no	title	author	magazine	year	volume	issue	page(s)	type
1	AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse	Lee, Jun-Hyeok			164	C	p.	article
2	All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors	Xue, Hao			164	C	p.	article
3	A monolithic low-power-consumption driver circuit based on a Dickson charge pump for MEMS actuator applications	Peng, Hui			164	C	p.	article
4	Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack	Lee, Tae Yoon			164	C	p.	article
5	Analytic modeling of breakdown voltage shift in the CMOS buried multiple junction detector	Vidal de Negreiros da Silva, Thais Luana			164	C	p.	article
6	An improved empirical nonlinear model for InP-based HEMTs	Zhong, Yinghui			164	C	p.	article
7	Channel hot carrier induced volatile oxide traps responsible for random telegraph signals in submicron pMOSFETs	Shamsur Rouf, A.S.M.			164	C	p.	article
8	Comparing smoothing techniques for extracting MOSFET threshold voltage	Stankus, Christopher			164	C	p.	article
9	Delineation of point defect state in Czochralski Si by modified background haze	Lee, Anselmo Jaehyeong			164	C	p.	article
10	Editorial Board				164	C	p.	article
11	Effect of adding ZHS microcubes on ZnO nanorods for CO2 gas sensing applications	Juang, Feng-Renn			164	C	p.	article
12	Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications	Wei, Xing			164	C	p.	article
13	Enhanced charge-transportation properties of low-temperature processed Al-doped ZnO and its impact on PV cell parameters of organic-inorganic perovskite solar cells	Khan, Firoz			164	C	p.	article
14	Modeling of void formation in phase change memory devices	Cywar, Adam			164	C	p.	article
15	Observation of mobility and velocity behaviors in ultra-scaled L G = 15 nm silicon nanowire field-effect transistors with different channel diameters	Lee, Seunghwan			164	C	p.	article
16	On-chip coupled inductors with a novel spliced anisotropic and isotropic magnetic core for inductance and coupling enhancement	He, Yuhan			164	C	p.	article
17	On the DC extraction of the asymmetric parasitic source and drain resistances for MOSFETs	Rodriguez-Davila, Rodolfo			164	C	p.	article
18	Photoresponses of the back-side illuminated GaAs photoconductive semiconductor switches in the linear mode	Kim, Yong Pyo			164	C	p.	article
19	Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs	Yi, Boram			164	C	p.	article
20	Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET	Choi, Yunho			164	C	p.	article
21	Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique	Lee, Junil			164	C	p.	article
22	Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs	Rawat, Akanksha			164	C	p.	article
23	Time-resolved electrical characteristics of ferroelectric-gated fully depleted silicon on insulator devices	Yoon, Chankeun			164	C	p.	article
24	Uniformity investigation of pHEMTs in 3-D MMICs for pre and post multilayer fabrication	Alim, Mohammad A.			164	C	p.	article
25	Using yield to predict long-term reliability of integrated circuits: Application of Boltzmann-Arrhenius-Zhurkov model	Suhir, E.			164	C	p.	article
26	Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique	Baek, Ji-Min			164	C	p.	article

26 results found

Koninklijke Bibliotheek - National Library of the Netherlands