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                                       Details for article 20 of 26 found articles
 
 
  Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
 
 
Title: Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
Author: Choi, Yunho
Lee, Kitae
Yeon Kim, Kyoung
Kim, Sihyun
Lee, Junil
Lee, Ryoongbin
Kim, Hyun-Min
Suh Song, Young
Kim, Sangwan
Lee, Jong-Ho
Park, Byung-Gook
Appeared in: Solid-state electronics
Paging: Volume 164 () nr. C pages p.
Year: 2020
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 20 of 26 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands