| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
AlInGaN/GaN double-channel FinFET with high on-current and negligible current collapse
|
Lee, Jun-Hyeok
|
|
|
164 |
C |
p.
|
artikel
|
| 2 |
All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors
|
Xue, Hao
|
|
|
164 |
C |
p.
|
artikel
|
| 3 |
A monolithic low-power-consumption driver circuit based on a Dickson charge pump for MEMS actuator applications
|
Peng, Hui
|
|
|
164 |
C |
p.
|
artikel
|
| 4 |
Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack
|
Lee, Tae Yoon
|
|
|
164 |
C |
p.
|
artikel
|
| 5 |
Analytic modeling of breakdown voltage shift in the CMOS buried multiple junction detector
|
Vidal de Negreiros da Silva, Thais Luana
|
|
|
164 |
C |
p.
|
artikel
|
| 6 |
An improved empirical nonlinear model for InP-based HEMTs
|
Zhong, Yinghui
|
|
|
164 |
C |
p.
|
artikel
|
| 7 |
Channel hot carrier induced volatile oxide traps responsible for random telegraph signals in submicron pMOSFETs
|
Shamsur Rouf, A.S.M.
|
|
|
164 |
C |
p.
|
artikel
|
| 8 |
Comparing smoothing techniques for extracting MOSFET threshold voltage
|
Stankus, Christopher
|
|
|
164 |
C |
p.
|
artikel
|
| 9 |
Delineation of point defect state in Czochralski Si by modified background haze
|
Lee, Anselmo Jaehyeong
|
|
|
164 |
C |
p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
|
164 |
C |
p.
|
artikel
|
| 11 |
Effect of adding ZHS microcubes on ZnO nanorods for CO2 gas sensing applications
|
Juang, Feng-Renn
|
|
|
164 |
C |
p.
|
artikel
|
| 12 |
Effects of boron doping on non-linear properties of SOI with embedded polycrystalline silicon layer for RF applications
|
Wei, Xing
|
|
|
164 |
C |
p.
|
artikel
|
| 13 |
Enhanced charge-transportation properties of low-temperature processed Al-doped ZnO and its impact on PV cell parameters of organic-inorganic perovskite solar cells
|
Khan, Firoz
|
|
|
164 |
C |
p.
|
artikel
|
| 14 |
Modeling of void formation in phase change memory devices
|
Cywar, Adam
|
|
|
164 |
C |
p.
|
artikel
|
| 15 |
Observation of mobility and velocity behaviors in ultra-scaled L G = 15 nm silicon nanowire field-effect transistors with different channel diameters
|
Lee, Seunghwan
|
|
|
164 |
C |
p.
|
artikel
|
| 16 |
On-chip coupled inductors with a novel spliced anisotropic and isotropic magnetic core for inductance and coupling enhancement
|
He, Yuhan
|
|
|
164 |
C |
p.
|
artikel
|
| 17 |
On the DC extraction of the asymmetric parasitic source and drain resistances for MOSFETs
|
Rodriguez-Davila, Rodolfo
|
|
|
164 |
C |
p.
|
artikel
|
| 18 |
Photoresponses of the back-side illuminated GaAs photoconductive semiconductor switches in the linear mode
|
Kim, Yong Pyo
|
|
|
164 |
C |
p.
|
artikel
|
| 19 |
Physics-based compact model of transient leakage current caused by parasitic bipolar junction transistor in gate-all-around MOSFETs
|
Yi, Boram
|
|
|
164 |
C |
p.
|
artikel
|
| 20 |
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
|
Choi, Yunho
|
|
|
164 |
C |
p.
|
artikel
|
| 21 |
Surface Ge-rich p-type SiGe channel tunnel field-effect transistor fabricated by local condensation technique
|
Lee, Junil
|
|
|
164 |
C |
p.
|
artikel
|
| 22 |
Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs
|
Rawat, Akanksha
|
|
|
164 |
C |
p.
|
artikel
|
| 23 |
Time-resolved electrical characteristics of ferroelectric-gated fully depleted silicon on insulator devices
|
Yoon, Chankeun
|
|
|
164 |
C |
p.
|
artikel
|
| 24 |
Uniformity investigation of pHEMTs in 3-D MMICs for pre and post multilayer fabrication
|
Alim, Mohammad A.
|
|
|
164 |
C |
p.
|
artikel
|
| 25 |
Using yield to predict long-term reliability of integrated circuits: Application of Boltzmann-Arrhenius-Zhurkov model
|
Suhir, E.
|
|
|
164 |
C |
p.
|
artikel
|
| 26 |
Vertical InGaAs tunnel-field-effect transistors by an electro-plating fin formation technique
|
Baek, Ji-Min
|
|
|
164 |
C |
p.
|
artikel
|
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