| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A high-speed lateral PIN polysilicon photodiode on standard bulk CMOS process
|
Zou, Wanghui
|
|
2017
|
129 |
C |
p. 61-65
5 p.
|
artikel
|
| 2 |
Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient
|
Xue, Peng
|
|
2017
|
129 |
C |
p. 35-43
9 p.
|
artikel
|
| 3 |
Analysis of the reverse recovery oscillation of superjunction MOSFET body diode
|
Xue, Peng
|
|
2017
|
129 |
C |
p. 81-87
7 p.
|
artikel
|
| 4 |
An ultra-wideband CMOS PA with dummy filling for reliability
|
Chang, Yu-Ting
|
|
2017
|
129 |
C |
p. 125-133
9 p.
|
artikel
|
| 5 |
A reversible bipolar WORM device based on AlOxNy thin film with Al nano phase embedded
|
Zhu, W.
|
|
2017
|
129 |
C |
p. 134-137
4 p.
|
artikel
|
| 6 |
Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer
|
Lee, Sol Kyu
|
|
2017
|
129 |
C |
p. 6-9
4 p.
|
artikel
|
| 7 |
Carrier trapping anisotropy in ambipolar SnO thin-film transistors
|
Luo, Hao
|
|
2017
|
129 |
C |
p. 88-92
5 p.
|
artikel
|
| 8 |
Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors
|
Onose, Hidekatsu
|
|
2017
|
129 |
C |
p. 200-205
6 p.
|
artikel
|
| 9 |
Comprehensive understanding of dark count mechanisms of single-photon avalanche diodes fabricated in deep sub-micron CMOS technologies
|
Xu, Yux
|
|
2017
|
129 |
C |
p. 168-174
7 p.
|
artikel
|
| 10 |
Design guidelines for GaSb/InAs TFET exploiting strain and device size
|
Visciarelli, Michele
|
|
2017
|
129 |
C |
p. 157-162
6 p.
|
artikel
|
| 11 |
Diamond-shaped body contact for on-state breakdown voltage improvement of SOI LDMOSFET
|
Daghighi, Arash
|
|
2017
|
129 |
C |
p. 182-187
6 p.
|
artikel
|
| 12 |
Dynamics of the current filament formation and its steady-state characteristics in chalcogenide based PCM
|
Bogoslovskiy, Nikita
|
|
2017
|
129 |
C |
p. 10-15
6 p.
|
artikel
|
| 13 |
Editorial Board
|
|
|
2017
|
129 |
C |
p. IFC-
1 p.
|
artikel
|
| 14 |
Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells
|
Miyoshi, Makoto
|
|
2017
|
129 |
C |
p. 29-34
6 p.
|
artikel
|
| 15 |
Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination
|
He, Yan Jing
|
|
2017
|
129 |
C |
p. 175-181
7 p.
|
artikel
|
| 16 |
Extraction method for parasitic capacitances and inductances of HEMT models
|
Zhang, HengShuang
|
|
2017
|
129 |
C |
p. 108-113
6 p.
|
artikel
|
| 17 |
Forming-free and hard-breakdown depressed resistive switching based on natural conductive path
|
Duan, W.J.
|
|
2017
|
129 |
C |
p. 210-214
5 p.
|
artikel
|
| 18 |
Gummel Symmetry Test on charge based drain current expression using modified first-order hyperbolic velocity-field expression
|
Singh, Kirmender
|
|
2017
|
129 |
C |
p. 188-195
8 p.
|
artikel
|
| 19 |
High-performance vertical Si PiN diode by hole remaining mechanism
|
Tsukuda, Masanori
|
|
2017
|
129 |
C |
p. 22-28
7 p.
|
artikel
|
| 20 |
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit
|
Al-Ameri, Talib
|
|
2017
|
129 |
C |
p. 73-80
8 p.
|
artikel
|
| 21 |
Impact of series resistance on the operation of junctionless transistors
|
Jeon, Dae-Young
|
|
2017
|
129 |
C |
p. 103-107
5 p.
|
artikel
|
| 22 |
In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact
|
Chen, P.-G.
|
|
2017
|
129 |
C |
p. 206-209
4 p.
|
artikel
|
| 23 |
Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs
|
Du, Jiangfeng
|
|
2017
|
129 |
C |
p. 1-5
5 p.
|
artikel
|
| 24 |
Influence of polarity of set voltage on the properties of conductive filaments in NiO based nonvolatile memory device
|
Yan, Hui-Yu
|
|
2017
|
129 |
C |
p. 120-124
5 p.
|
artikel
|
| 25 |
Investigation and process optimization of SONOS cell’s drain disturb in 2-transistor structure flash arrays
|
Xu, Zhaozhao
|
|
2017
|
129 |
C |
p. 44-51
8 p.
|
artikel
|
| 26 |
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements
|
Kriso, C.
|
|
2017
|
129 |
C |
p. 93-96
4 p.
|
artikel
|
| 27 |
Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area
|
Wang, Chong
|
|
2017
|
129 |
C |
p. 114-119
6 p.
|
artikel
|
| 28 |
Performance enhancement of AlGaN/GaN nanochannel omega-FinFET
|
Im, Ki-Sik
|
|
2017
|
129 |
C |
p. 196-199
4 p.
|
artikel
|
| 29 |
Single frequency correction based on three-element model for thin dielectric MOS capacitor
|
Zhang, Xizhen
|
|
2017
|
129 |
C |
p. 97-102
6 p.
|
artikel
|
| 30 |
Small-signal characterization and modelling of 55nm SiGe BiCMOS HBT up to 325GHz
|
Deng, Marina
|
|
2017
|
129 |
C |
p. 150-156
7 p.
|
artikel
|
| 31 |
Structural, optical, and electrical-transport properties of Al-P-O inorganic layer coated on flexible stainless steel substrate
|
Kim, Moojin
|
|
2017
|
129 |
C |
p. 16-21
6 p.
|
artikel
|
| 32 |
The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors
|
Protasov, D.Yu.
|
|
2017
|
129 |
C |
p. 66-72
7 p.
|
artikel
|
| 33 |
Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions
|
Qiang, Lei
|
|
2017
|
129 |
C |
p. 163-167
5 p.
|
artikel
|
| 34 |
Two methods of tuning threshold voltage of bulk FinFETs with replacement high-k metal-gate stacks
|
Xu, Miao
|
|
2017
|
129 |
C |
p. 52-60
9 p.
|
artikel
|
| 35 |
Underlapped FinFET on insulator: Quasi3D analytical model
|
Kumari, Vandana
|
|
2017
|
129 |
C |
p. 138-149
12 p.
|
artikel
|
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