| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A band-modulation device in advanced FDSOI technology: Sharp switching characteristics
|
El Dirani, Hassan
|
|
2016
|
125 |
C |
p. 103-110
8 p.
|
artikel
|
| 2 |
Anomalous random telegraph noise and temporary phenomena in resistive random access memory
|
Puglisi, Francesco Maria
|
|
2016
|
125 |
C |
p. 204-213
10 p.
|
artikel
|
| 3 |
A review of emerging non-volatile memory (NVM) technologies and applications
|
Chen, An
|
|
2016
|
125 |
C |
p. 25-38
14 p.
|
artikel
|
| 4 |
Back-gate effects and mobility characterization in junctionless transistor
|
Parihar, Mukta Singh
|
|
2016
|
125 |
C |
p. 154-160
7 p.
|
artikel
|
| 5 |
Characterization of charge trapping phenomena at III–N/dielectric interfaces
|
Stradiotto, Roberta
|
|
2016
|
125 |
C |
p. 142-153
12 p.
|
artikel
|
| 6 |
Charge Transfer Inefficiency in Pinned Photodiode CMOS image sensors: Simple Montecarlo modeling and experimental measurement based on a pulsed storage-gate method
|
Pelamatti, Alice
|
|
2016
|
125 |
C |
p. 227-233
7 p.
|
artikel
|
| 7 |
Compact heterodyne NEMS oscillator for sensing applications
|
Sansa, Marc
|
|
2016
|
125 |
C |
p. 214-219
6 p.
|
artikel
|
| 8 |
Contact resistance extraction methods for short- and long-channel carbon nanotube field-effect transistors
|
Pacheco-Sanchez, Anibal
|
|
2016
|
125 |
C |
p. 161-166
6 p.
|
artikel
|
| 9 |
Contact resistance study of various metal electrodes with CVD graphene
|
Gahoi, Amit
|
|
2016
|
125 |
C |
p. 234-239
6 p.
|
artikel
|
| 10 |
Editorial Board
|
|
|
2016
|
125 |
C |
p. IFC-
1 p.
|
artikel
|
| 11 |
EDMOS in ultrathin FDSOI: Impact of the drift region properties
|
Litty, Antoine
|
|
2016
|
125 |
C |
p. 133-141
9 p.
|
artikel
|
| 12 |
Effect of barrier recess on transport and electrostatic interface properties of GaN-based normally-off and normally-on metal oxide semiconductor heterostructure field effect transistors
|
Capriotti, M.
|
|
2016
|
125 |
C |
p. 118-124
7 p.
|
artikel
|
| 13 |
Extended papers selected from ESSDERC 2015
|
Grasser, Tibor
|
|
2016
|
125 |
C |
p. 1-
1 p.
|
artikel
|
| 14 |
FinFET and UTBB for RF SOI communication systems
|
Raskin, Jean-Pierre
|
|
2016
|
125 |
C |
p. 73-81
9 p.
|
artikel
|
| 15 |
III-V/Ge MOS device technologies for low power integrated systems
|
Takagi, S.
|
|
2016
|
125 |
C |
p. 82-102
21 p.
|
artikel
|
| 16 |
Impact of temperature and programming method on the data retention of Cu/Al2O3-based conductive-bridge RAM operated at low-current (10μA)
|
Belmonte, A.
|
|
2016
|
125 |
C |
p. 189-197
9 p.
|
artikel
|
| 17 |
Improvement of performances HfO2-based RRAM from elementary cell to 16kb demonstrator by introduction of thin layer of Al2O3
|
Azzaz, M.
|
|
2016
|
125 |
C |
p. 182-188
7 p.
|
artikel
|
| 18 |
Investigations of vapour-phase deposited transition metal dichalcogenide films for future electronic applications
|
Gatensby, Riley
|
|
2016
|
125 |
C |
p. 39-51
13 p.
|
artikel
|
| 19 |
Low-frequency noise in bare SOI wafers: Experiments and model
|
Pirro, L.
|
|
2016
|
125 |
C |
p. 167-174
8 p.
|
artikel
|
| 20 |
Modeling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A
|
Žiemys, Gražvydas
|
|
2016
|
125 |
C |
p. 247-253
7 p.
|
artikel
|
| 21 |
Plasmonic and electronic device-based integrated circuits and their characteristics
|
Sakai, H.
|
|
2016
|
125 |
C |
p. 240-246
7 p.
|
artikel
|
| 22 |
Post drain-stress behavior of AlGaN/GaN-on-Si MIS-HEMTs
|
Jauss, Simon A.
|
|
2016
|
125 |
C |
p. 125-132
8 p.
|
artikel
|
| 23 |
Stack optimization of oxide-based RRAM for fast write speed (<1μs) at low operating current (<10μA)
|
Chen, C.Y.
|
|
2016
|
125 |
C |
p. 198-203
6 p.
|
artikel
|
| 24 |
Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model
|
Pelloux-Prayer, J.
|
|
2016
|
125 |
C |
p. 175-181
7 p.
|
artikel
|
| 25 |
The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
|
Kaczer, B.
|
|
2016
|
125 |
C |
p. 52-62
11 p.
|
artikel
|
| 26 |
Theoretical analysis and modeling for nanoelectronics
|
Baccarani, Giorgio
|
|
2016
|
125 |
C |
p. 2-13
12 p.
|
artikel
|
| 27 |
The world’s first high voltage GaN-on-Diamond power semiconductor devices
|
Baltynov, Turar
|
|
2016
|
125 |
C |
p. 111-117
7 p.
|
artikel
|
| 28 |
Tri-linear color multi-linescan sensor with 200kHz line rate
|
Schrey, Olaf
|
|
2016
|
125 |
C |
p. 220-226
7 p.
|
artikel
|
| 29 |
UTBB FDSOI: Evolution and opportunities
|
Monfray, Stephane
|
|
2016
|
125 |
C |
p. 63-72
10 p.
|
artikel
|
| 30 |
UTBB FDSOI suitability for IoT applications: Investigations at device, design and architectural levels
|
Berthier, Florent
|
|
2016
|
125 |
C |
p. 14-24
11 p.
|
artikel
|
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