Improvement of performances HfO2-based RRAM from elementary cell to 16kb demonstrator by introduction of thin layer of Al2O3
Titel:
Improvement of performances HfO2-based RRAM from elementary cell to 16kb demonstrator by introduction of thin layer of Al2O3
Auteur:
Azzaz, M. Benoist, A. Vianello, E. Garbin, D. Jalaguier, E. Cagli, C. Charpin, C. Bernasconi, S. Jeannot, S. Dewolf, T. Audoit, G. Guedj, C. Denorme, S. Candelier, P. Fenouillet-Beranger, C. Perniola, L.