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                             33 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A bottom-gate silicon nanowire field-effect transistor with functionalized palladium nanoparticles for hydrogen gas sensors Choi, Bongsik
 2015
 114 C p. 76-79
4 p.
 artikel
2 Accurate analytical approximation of the OTFTs surface potential by means of the Lagrange Reversion Theorem Colalongo, Luigi
 2015
 114 C p. 14-16
3 p.
 artikel
3 A comparative study of lateral SiCN/porous silicon and vertical SiCN/porous silicon junctions for sensing ultraviolet light Chou, Tse-Heng
 2015
 114 C p. 55-59
5 p.
 artikel
4 A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam Guha, Koushik
 2015
 114 C p. 35-42
8 p.
 artikel
5 A novel area-efficiency multi-finger GGnMOS with high ESD robustness Zhang, Chunwei
 2015
 114 C p. 131-134
4 p.
 artikel
6 Array-level stability enhancement of 50nm Al x O y ReRAM Iwasaki, Tomoko Ogura
 2015
 114 C p. 1-8
8 p.
 artikel
7 Bias temperature instability comparison of CMOS LTPS-TFTs with HfO2 gate dielectric Ma, William Cheng-Yu
 2015
 114 C p. 115-120
6 p.
 artikel
8 Calculating drain delay in high electron mobility transistors Coffie, R.
 2015
 114 C p. 98-103
6 p.
 artikel
9 Correlated noise in bipolar transistors: Model implementation issues Huszka, Zoltan
 2015
 114 C p. 69-75
7 p.
 artikel
10 Depletion length in semiconductor nanostructures with spherical symmetry Borblik, V.L.
 2015
 114 C p. 171-173
3 p.
 artikel
11 Editorial Board 2015
 114 C p. IFC-
1 p.
 artikel
12 Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors Starikov, E.
 2015
 114 C p. 141-147
7 p.
 artikel
13 Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system Mun, Jae-Kyoung
 2015
 114 C p. 121-130
10 p.
 artikel
14 Electrically tunable spectral responsivity in metal–semiconductor–metal photodetectors based on low-dimensional ZnCdS/ZnMgS/GaP, ZnCdS/ZnS/GaP heterostructures Averin, S.V.
 2015
 114 C p. 135-140
6 p.
 artikel
15 Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory Li, Yang
 2015
 114 C p. 17-22
6 p.
 artikel
16 Formation and characterization of Ni/Al Ohmic contact on n+-type GeSn Zhang, Xu
 2015
 114 C p. 178-181
4 p.
 artikel
17 Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices Huang, Huolin
 2015
 114 C p. 148-154
7 p.
 artikel
18 Fowler–Nordheim electron tunneling mechanism in Ni/SiO2/n-4H SiC MOS devices Kodigala, Subba Ramaiah
 2015
 114 C p. 104-110
7 p.
 artikel
19 Gradual bipolar resistive switching in Ni/Si3N4/n +-Si resistive-switching memory device for high-density integration and low-power applications Kim, Sungjun
 2015
 114 C p. 94-97
4 p.
 artikel
20 Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics Di Lecce, Valerio
 2015
 114 C p. 23-29
7 p.
 artikel
21 High efficiency yellow organic light-emitting diodes with optimized barrier layers Mu, Ye
 2015
 114 C p. 87-89
3 p.
 artikel
22 Hole injection and dielectric breakdown in 6H–SiC and 4H–SiC metal–oxide–semiconductor structures during substrate electron injection via Fowler–Nordheim tunneling Samanta, Piyas
 2015
 114 C p. 60-68
9 p.
 artikel
23 Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22nm node pMOSFETs Wang, Guilei
 2015
 114 C p. 43-48
6 p.
 artikel
24 Improved modeling on the RF behavior of InAs/AlSb HEMTs Guan, He
 2015
 114 C p. 155-162
8 p.
 artikel
25 Maximizing the value of gate capacitance in field-effect devices using an organic interface layer Kwok, H.L.
 2015
 114 C p. 163-166
4 p.
 artikel
26 Numerical study of read scheme in one-selector one-resistor crossbar array Kim, Sungho
 2015
 114 C p. 80-86
7 p.
 artikel
27 On the simulation and analytical modeling of on-state DC characteristics of Silicon Carbide Double-implanted MOSFETs Jaikumar, M.G.
 2015
 114 C p. 49-54
6 p.
 artikel
28 Pickup impact on high-voltage multifinger LDMOS–SCR with low trigger voltage and high failure current Yang, Liu
 2015
 114 C p. 9-13
5 p.
 artikel
29 Random telegraph signal transients in active logarithmic continuous-time vision sensors Pardo, Fernando
 2015
 114 C p. 111-114
4 p.
 artikel
30 Simulation study of the electron mobility in few-layer MoS2 metal–insulator-semiconductor field-effect transistors Gonzalez-Medina, J.M.
 2015
 114 C p. 30-34
5 p.
 artikel
31 Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition Kim, Choong-Ki
 2015
 114 C p. 90-93
4 p.
 artikel
32 The impact of gate to drain spacing on hot-carrier degradation in sub-100nm Ni–Pt salicidation FinFETs Lee, Seung Min
 2015
 114 C p. 167-170
4 p.
 artikel
33 The reliability study of III–V solar cell with copper based contacts Hsu, Ching-Hsiang
 2015
 114 C p. 174-177
4 p.
 artikel
                             33 gevonden resultaten
 
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