| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accuracy of structure transfer in deep X-ray lithography
|
Feiertag, G.
|
|
1997
|
35 |
1-4 |
p. 557-560
|
artikel
|
| 2 |
Acid and base diffusion in chemically amplified DUV resists
|
Itani, T.
|
|
1997
|
35 |
1-4 |
p. 149-152
|
artikel
|
| 3 |
AFM-based fabrication of lateral single-electron tunneling structures for elevated temperature operation
|
Montelius, L.
|
|
1997
|
35 |
1-4 |
p. 281-284
|
artikel
|
| 4 |
Alignment accuracy evaluation of the X-ray stepper SS-1 for processed wafers
|
Suzuki, M.
|
|
1997
|
35 |
1-4 |
p. 537-540
|
artikel
|
| 5 |
Analysis of side-lobe printability in sub-half-micron contact hole definition
|
Martin, Brian
|
|
1997
|
35 |
1-4 |
p. 197-200
|
artikel
|
| 6 |
Analysis of stencil mask distortion in ion projection lithography
|
Didenko, L.
|
|
1997
|
35 |
1-4 |
p. 443-446
|
artikel
|
| 7 |
A nano-composite resist system: A new approach to nanometer pattern fabrication
|
Ishii, T.
|
|
1997
|
35 |
1-4 |
p. 113-116
|
artikel
|
| 8 |
A new alignment technique for steppers: Hybrid marks®
|
Auzino, L.
|
|
1997
|
35 |
1-4 |
p. 225-228
|
artikel
|
| 9 |
A new approach to the cap layer thinning of GaAs based heterostructures with near surface quantum wells
|
Borzenko, T.B.
|
|
1997
|
35 |
1-4 |
p. 83-86
|
artikel
|
| 10 |
A new fabrication process for metallic point contacts
|
Gribov, N.N.
|
|
1997
|
35 |
1-4 |
p. 317-320
|
artikel
|
| 11 |
A new positive DUV photoresist optimized for 0.25 μm isolated lines
|
Lindsay, T.
|
|
1997
|
35 |
1-4 |
p. 109-112
|
artikel
|
| 12 |
An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs
|
Duran, H.C.
|
|
1997
|
35 |
1-4 |
p. 67-70
|
artikel
|
| 13 |
Anisotropic etching of inverted pyramids in the sub-100 nm region
|
Hantschel, T.
|
|
1997
|
35 |
1-4 |
p. 405-407
|
artikel
|
| 14 |
Anisotropic pattern transfer of fine resist features to silicon nitride via an intermediate titanium layer
|
Midha, A.
|
|
1997
|
35 |
1-4 |
p. 99-102
|
artikel
|
| 15 |
An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate
|
Rishton, S.A.
|
|
1997
|
35 |
1-4 |
p. 361-363
|
artikel
|
| 16 |
A novel method of optical proximity correction using anti-reflective layers and individual photoresist characteristics
|
Arthur, G.
|
|
1997
|
35 |
1-4 |
p. 185-188
|
artikel
|
| 17 |
A novel X-ray mask concept for mex&match lithography fabrication of MOS devices by synchrotron radiation lithography
|
Di Fabrizio, E.
|
|
1997
|
35 |
1-4 |
p. 553-556
|
artikel
|
| 18 |
A one-dimensional demonstration of spatial-phase-locked electron-beam lithography
|
Goodberlet, J.
|
|
1997
|
35 |
1-4 |
p. 473-476
|
artikel
|
| 19 |
Application of X-ray mask fabrication technologies to high resolution, large diameter Ta Fresnel zone plates
|
Ozawa, A.
|
|
1997
|
35 |
1-4 |
p. 525-529
|
artikel
|
| 20 |
Author index volume 35
|
|
|
1997
|
35 |
1-4 |
p. 565-580
|
artikel
|
| 21 |
Bottom Anti-Reflective Coatings for DUV lithography: Determination of optimum thermal process conditions
|
Schiltz, A.
|
|
1997
|
35 |
1-4 |
p. 221-224
|
artikel
|
| 22 |
BSM 7: RIE lag in high aspect ratio trench etching of silicon
|
Jansen, Henri
|
|
1997
|
35 |
1-4 |
p. 45-50
|
artikel
|
| 23 |
Bulk silicon micromachining using porous silicon sacrificial layers
|
Kaltsas, G.
|
|
1997
|
35 |
1-4 |
p. 397-400
|
artikel
|
| 24 |
Calixarenes-prospective materials for nanofabrications-
|
Ohnishi, Y.
|
|
1997
|
35 |
1-4 |
p. 117-120
|
artikel
|
| 25 |
Chemical gas etching of InP-based structures
|
Maximov, I.
|
|
1997
|
35 |
1-4 |
p. 87-89
|
artikel
|
| 26 |
Chemical vs. physical factors in dry etching induced damage in the Si GexSi1-x system
|
van Veen, R.G.
|
|
1997
|
35 |
1-4 |
p. 55-58
|
artikel
|
| 27 |
Comparative study of the characteristics of octavinylsilsesquioxane dry resist in ultraviolet-, electron-beam and X-ray exposure
|
Schmidt, A.
|
|
1997
|
35 |
1-4 |
p. 129-132
|
artikel
|
| 28 |
Comparing ion damage in GaAs and InP
|
Yu, D.G.
|
|
1997
|
35 |
1-4 |
p. 95-98
|
artikel
|
| 29 |
Copper dry etching technique for ULSI interconnections
|
Markert, Matthias
|
|
1997
|
35 |
1-4 |
p. 333-336
|
artikel
|
| 30 |
Deep, three dimensional lithography with a laser-plasma X-ray source at 1nm wavelength
|
Turcu, ICE
|
|
1997
|
35 |
1-4 |
p. 541-544
|
artikel
|
| 31 |
Development and characterization of nitride and oxide based composite materials for sub 0.18 μm attenuated phase shift masking
|
Smith, Bruce W.
|
|
1997
|
35 |
1-4 |
p. 201-204
|
artikel
|
| 32 |
Development behaviour of irradiated microstructures
|
Zanghellini, J.
|
|
1997
|
35 |
1-4 |
p. 409-412
|
artikel
|
| 33 |
Development of a 100 nm gate power HEMT using four-layer resist and flexible e-beam exposure strategies
|
Frijlink, P.M.
|
|
1997
|
35 |
1-4 |
p. 313-316
|
artikel
|
| 34 |
Digital Pattern Generator for polynomially bordered shape primitives
|
Strähle, S.
|
|
1997
|
35 |
1-4 |
p. 465-468
|
artikel
|
| 35 |
Direct write patterning of titanium films using focused ion beam implantation and plasma etching
|
Zachariasse, J.M.Frank
|
|
1997
|
35 |
1-4 |
p. 63-66
|
artikel
|
| 36 |
Dry etch damage in III–V semiconductors
|
Hu, Evelyn L.
|
|
1997
|
35 |
1-4 |
p. 23-28
|
artikel
|
| 37 |
Dry etching of all-oxide transparent thin film memory transistors
|
Giesbers, J.B.
|
|
1997
|
35 |
1-4 |
p. 71-74
|
artikel
|
| 38 |
DUV resist etch selectivity improvements using UV stabilization
|
Krisa, W.L.
|
|
1997
|
35 |
1-4 |
p. 209-212
|
artikel
|
| 39 |
EBT micro-extraction structures fabricated by focused ion-beam
|
Dinnis, A.R.
|
|
1997
|
35 |
1-4 |
p. 447-450
|
artikel
|
| 40 |
Economic production of submicron ASICs with laser beam direct write lithography
|
Schomburg, C.
|
|
1997
|
35 |
1-4 |
p. 509-512
|
artikel
|
| 41 |
Editorial Board
|
|
|
1997
|
35 |
1-4 |
p. ii
|
artikel
|
| 42 |
Effect of temperature variations in the post-exposure processes of optical lithography
|
Arthur, G.
|
|
1997
|
35 |
1-4 |
p. 137-140
|
artikel
|
| 43 |
Electrical characterization of Si Si0.7Ge0.3 quantum well wires fabricated by low damage CF4 reactive ion etching
|
Lee, K.Y.
|
|
1997
|
35 |
1-4 |
p. 33-36
|
artikel
|
| 44 |
Electrical properties of 100 nm pitch Cr Au fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction devices
|
Hongo, Hiroo
|
|
1997
|
35 |
1-4 |
p. 241-244
|
artikel
|
| 45 |
Electron beam induced damage of silicon germanium
|
Paul, D.J.
|
|
1997
|
35 |
1-4 |
p. 59-62
|
artikel
|
| 46 |
Electron beam lithography of phase mask gratings for near field holographic production of optical fibre gratings
|
Liu, X.
|
|
1997
|
35 |
1-4 |
p. 345-348
|
artikel
|
| 47 |
Electron-beam lithography resist profile simulation for highly sensitive resist
|
Lee, C.
|
|
1997
|
35 |
1-4 |
p. 125-128
|
artikel
|
| 48 |
Electron beam resists based on oxirane functionalised polystyrenes
|
Murphy, J.J.
|
|
1997
|
35 |
1-4 |
p. 121-124
|
artikel
|
| 49 |
Electroplating: an alternative transfer technology in the 20nm range
|
Simon, G.
|
|
1997
|
35 |
1-4 |
p. 51-54
|
artikel
|
| 50 |
Electrostatic wafer and wafer-carrier holding mechanisms for the EB-X2 e-beam writer
|
Kunioka, T.
|
|
1997
|
35 |
1-4 |
p. 481-485
|
artikel
|
| 51 |
Embossing of nanoscale features and environments
|
Casey, B.G.
|
|
1997
|
35 |
1-4 |
p. 393-396
|
artikel
|
| 52 |
Fabrication and characterisation of SiGe based in-plane-gate transistors
|
Köster, T.
|
|
1997
|
35 |
1-4 |
p. 301-304
|
artikel
|
| 53 |
Fabrication and characterization of III–V compound semiconductor Bragg-Fresnel lenses for hard x-ray microfocusing
|
Caine, E.J.
|
|
1997
|
35 |
1-4 |
p. 289-292
|
artikel
|
| 54 |
Fabrication and properties of dot array using electron-beam-induced deposition
|
Komuro, M.
|
|
1997
|
35 |
1-4 |
p. 273-276
|
artikel
|
| 55 |
Fabrication of buried quantum structures using FIB-MBE total vacuum process
|
Wakaya, F.
|
|
1997
|
35 |
1-4 |
p. 451-454
|
artikel
|
| 56 |
Fabrication of high aspect ratio structures using chlorine gas chopping technique
|
Paul, A.K.
|
|
1997
|
35 |
1-4 |
p. 79-82
|
artikel
|
| 57 |
Fabrication of MSM detector structures on silicon by focused ion beam implantation
|
Teichert, J.
|
|
1997
|
35 |
1-4 |
p. 455-458
|
artikel
|
| 58 |
Fabrication of 10-nm Si pillars with self-formed etching masks
|
Tada, Tetsuya
|
|
1997
|
35 |
1-4 |
p. 293-296
|
artikel
|
| 59 |
Fabrication of refractive microlenses in semiconductors by mask shape transfer in reactive ion etching
|
Strzelecka, E.M.
|
|
1997
|
35 |
1-4 |
p. 385-388
|
artikel
|
| 60 |
Fabrication of site-controlled metal dot array by electron beam surface modification
|
Tsutsui, K.
|
|
1997
|
35 |
1-4 |
p. 245-248
|
artikel
|
| 61 |
Fabrication of submicron single-crystalline and bamboo A1 lines by recrystallization
|
van den Homberg, M.J.C.
|
|
1997
|
35 |
1-4 |
p. 277-280
|
artikel
|
| 62 |
Focused ion beams in microsystem fabrication
|
Daniel, J.H.
|
|
1997
|
35 |
1-4 |
p. 431-434
|
artikel
|
| 63 |
Gating high mobility silicon-germanium heterostructures
|
Griffin, N.
|
|
1997
|
35 |
1-4 |
p. 309-312
|
artikel
|
| 64 |
Gel formation theory approach for the modelling of negative chemically amplified e-beam resists
|
Patsis, G.
|
|
1997
|
35 |
1-4 |
p. 157-160
|
artikel
|
| 65 |
Gold nanograins deposited from a liquid metal ion source
|
Vieu, C.
|
|
1997
|
35 |
1-4 |
p. 349-352
|
artikel
|
| 66 |
High focal depth imaging by Beam Shaping Optical Elements?
|
Hild, R.
|
|
1997
|
35 |
1-4 |
p. 205-208
|
artikel
|
| 67 |
Highly sensitive resist material for deep X-ray lithography
|
Schenk, R.
|
|
1997
|
35 |
1-4 |
p. 105-108
|
artikel
|
| 68 |
High resolution electron beam lithography studies on Shipley chemically amplified DUV resists
|
Macintyre, D.
|
|
1997
|
35 |
1-4 |
p. 213-216
|
artikel
|
| 69 |
Hot electron interference by 40 nm-pitch double slit buried in semiconductor
|
Hongo, H.
|
|
1997
|
35 |
1-4 |
p. 337-340
|
artikel
|
| 70 |
Imprint lithography with sub-10 nm feature size and high throughput
|
Chou, Stephen Y.
|
|
1997
|
35 |
1-4 |
p. 237-240
|
artikel
|
| 71 |
Improving the resistance of PECVD silicon nitride to dry etching using an oxygen plasma
|
Hicks, S.E.
|
|
1997
|
35 |
1-4 |
p. 41-44
|
artikel
|
| 72 |
Influence of resist process on proximity bias
|
Gehoel-van Ansem, Wendy F.J.
|
|
1997
|
35 |
1-4 |
p. 193-196
|
artikel
|
| 73 |
Investigation of environmental stability in chemically amplified resists
|
Yoshino, H.
|
|
1997
|
35 |
1-4 |
p. 153-156
|
artikel
|
| 74 |
Investigation of photoresist-specific linearity in optical lithography
|
Martin, Brian
|
|
1997
|
35 |
1-4 |
p. 189-192
|
artikel
|
| 75 |
Korean Road Map for micropatterning into the next century
|
Baik, Ki-Ho
|
|
1997
|
35 |
1-4 |
p. 11-20
|
artikel
|
| 76 |
Large area multilayered electrode arrays for dielectrophoretic fractionation
|
Green, N.G.
|
|
1997
|
35 |
1-4 |
p. 421-424
|
artikel
|
| 77 |
Liquid-target laser-plasma source for X-ray lithography
|
Malmqvist, L.
|
|
1997
|
35 |
1-4 |
p. 535-536
|
artikel
|
| 78 |
Low cost fabrication of micromechanical systems
|
Cui, Zheng
|
|
1997
|
35 |
1-4 |
p. 389-392
|
artikel
|
| 79 |
Low energy electron beam lithography: Pattern distortion by charge trapped in the resist
|
Kudryashov, V.A.
|
|
1997
|
35 |
1-4 |
p. 165-168
|
artikel
|
| 80 |
Magnetically refined tips for Scanning Force Microscopy
|
Jumpertz, R.
|
|
1997
|
35 |
1-4 |
p. 325-328
|
artikel
|
| 81 |
Magnetic tunnel junctions fabricated at tenth-micron dimensions by electron beam lithography
|
Rishton, S.A.
|
|
1997
|
35 |
1-4 |
p. 249-252
|
artikel
|
| 82 |
Manufacturable DUV lithography processes for 0.25μm technology contact and via layers
|
Baker, Daniel
|
|
1997
|
35 |
1-4 |
p. 517-522
|
artikel
|
| 83 |
Method of dry-etching evaluation using quantum dots
|
Rahman, M.
|
|
1997
|
35 |
1-4 |
p. 91-94
|
artikel
|
| 84 |
Microlens lithography and smart masks
|
Völkel, R.
|
|
1997
|
35 |
1-4 |
p. 513-516
|
artikel
|
| 85 |
Micromachined Self-Aligned Microlens(SAM) for microcolumn electron beam
|
Lee, Yong-Jae
|
|
1997
|
35 |
1-4 |
p. 413-416
|
artikel
|
| 86 |
Micromechanics: A toolbox for femtoscale science: “Towards a laboratory on a tip”
|
Berger, R.
|
|
1997
|
35 |
1-4 |
p. 373-379
|
artikel
|
| 87 |
Micromilling development and applications for microfabrication
|
Friedrich, C.R.
|
|
1997
|
35 |
1-4 |
p. 367-372
|
artikel
|
| 88 |
Nanofabrication using self-narrowing atomic beams
|
Petrashov, Victor T.
|
|
1997
|
35 |
1-4 |
p. 357-359
|
artikel
|
| 89 |
Nanolithography with NOVER (Negative Organic Vacuum E-beam Resist)
|
Petrashov, V.
|
|
1997
|
35 |
1-4 |
p. 161-163
|
artikel
|
| 90 |
Nanometerscale lithography with chromium atoms using light forces
|
Drodofsky, U.
|
|
1997
|
35 |
1-4 |
p. 285-288
|
artikel
|
| 91 |
Nanoscale etching of resists in view of a mechanistic framework
|
van Delft, Falco C.M.J.M.
|
|
1997
|
35 |
1-4 |
p. 75-78
|
artikel
|
| 92 |
New concept for ultra small N-MOSFET's
|
Gondermann, J.
|
|
1997
|
35 |
1-4 |
p. 305-308
|
artikel
|
| 93 |
New method for fabrication of an array of individually controllable miniaturized electrostatic lenses
|
Gross, H.S.
|
|
1997
|
35 |
1-4 |
p. 469-472
|
artikel
|
| 94 |
200nm Deep-UV lithography using Step-and-Scan
|
Sewell, Harry
|
|
1997
|
35 |
1-4 |
p. 177-183
|
artikel
|
| 95 |
Optimization of optical density and planarization of an anti-reflectant
|
Pavelchek, EK
|
|
1997
|
35 |
1-4 |
p. 217-220
|
artikel
|
| 96 |
Optimized process for electron beam nanolithography using AZPN114 chemically amplified resist
|
Cui, Z.
|
|
1997
|
35 |
1-4 |
p. 145-148
|
artikel
|
| 97 |
Pattern generation for the next millennium
|
Hawryliw, Andre
|
|
1997
|
35 |
1-4 |
p. 501-507
|
artikel
|
| 98 |
Patterning of monolayers of crystalline S-layer proteins on a silicon surface by deep ultraviolet radiation
|
Pum, D.
|
|
1997
|
35 |
1-4 |
p. 297-300
|
artikel
|
| 99 |
Prediction of in-plane distortions due to mask fabrication processes
|
Laudon, M.
|
|
1997
|
35 |
1-4 |
p. 549-552
|
artikel
|
| 100 |
Preface
|
Wilkinson, C.D.W.
|
|
1997
|
35 |
1-4 |
p. vii-viii
|
artikel
|
| 101 |
Preparation of nanometer-scale windows in SiO2 for selective epitaxial growth of Si based devices
|
Maes, J.W.H.
|
|
1997
|
35 |
1-4 |
p. 321-324
|
artikel
|
| 102 |
Process latitude enhancement for 3D structure formation in e-beam lithography
|
Kudryashov, V.A.
|
|
1997
|
35 |
1-4 |
p. 487-490
|
artikel
|
| 103 |
Properties of thin anti-adhesive films used for the replication of microstructures in polymers
|
Jaszewski, R.W.
|
|
1997
|
35 |
1-4 |
p. 381-384
|
artikel
|
| 104 |
Proximity correction for e-beam patterned sub-500nm diffractive optical elements
|
Grella, L.
|
|
1997
|
35 |
1-4 |
p. 495-498
|
artikel
|
| 105 |
Quantum wire self-ordered growth seeded by electron-beam lithography
|
Dwir, B.
|
|
1997
|
35 |
1-4 |
p. 269-272
|
artikel
|
| 106 |
Reducing recursive effect for fast proximity correction
|
Lee, S.-Y.
|
|
1997
|
35 |
1-4 |
p. 491-494
|
artikel
|
| 107 |
Resist profile enhancement in near field holographic printing using bottom anti-reflection coatings
|
Ahrens, R.G.
|
|
1997
|
35 |
1-4 |
p. 229-234
|
artikel
|
| 108 |
Revolutionary and evolutionary resist design concepts for 193 nm lithography
|
Nalamasu, O.
|
|
1997
|
35 |
1-4 |
p. 133-136
|
artikel
|
| 109 |
Room temperature operated single electron transistor fabricated by electron beam nanolithography
|
Kurihara, K.
|
|
1997
|
35 |
1-4 |
p. 261-264
|
artikel
|
| 110 |
Scanning probe sharp tip formation for IC integration using mesa technique
|
Grabiec, P.B.
|
|
1997
|
35 |
1-4 |
p. 329-332
|
artikel
|
| 111 |
Selective metal deposition using metal-covered scanning tunneling microscope tips
|
Takai, M.
|
|
1997
|
35 |
1-4 |
p. 353-356
|
artikel
|
| 112 |
Silicon micro/nanomechanical device fabrication based on focused ion beam surface modification and KOH etching
|
Brugger, J.
|
|
1997
|
35 |
1-4 |
p. 401-404
|
artikel
|
| 113 |
Simultaneous exposure of filter gratings and waveguides by direct write electron-beam lithography
|
Steingrüber, R.
|
|
1997
|
35 |
1-4 |
p. 341-344
|
artikel
|
| 114 |
Study of energy broadening of high-brightness ion beams from a surface plasma Penning source and its relevance in ion projection lithography
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Guharay, S.K.
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1997
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35 |
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p. 435-438
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artikel
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| 115 |
Study on optimization of annular off-axis illumination using Taguchi method for 0.35 μm dense line/space
|
Loong, Wen-an
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1997
|
35 |
1-4 |
p. 461-464
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artikel
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| 116 |
Submicrometer p-type SiGe modulation-doped field-effect transistors for high speed applications
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Adesida, I.
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1997
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35 |
1-4 |
p. 257-260
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artikel
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| 117 |
Sub-10 nm monogranular metallic lines formed by 200 kV electron-beam lithography and lift-off in polymethylmethacrylate resist
|
Vieu, C.
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1997
|
35 |
1-4 |
p. 253-256
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artikel
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| 118 |
Surface modifications of YBa2Cu3O7-δ thin films usinga STM in air and in UHV
|
Bertsche, G.
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1997
|
35 |
1-4 |
p. 265-268
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artikel
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| 119 |
Technologies for the fabrication of cylindrical fine line devices
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Lullo, G.
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|
1997
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35 |
1-4 |
p. 417-420
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artikel
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| 120 |
The effect of surface transport on the evolution of film microstructure in plasma etching and deposition
|
Singh, Vivek K.
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1997
|
35 |
1-4 |
p. 37-40
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artikel
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| 121 |
The formation of acid diffusion wells in acid catalyzed photoresists
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Petersen, John S.
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1997
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35 |
1-4 |
p. 169-174
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artikel
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| 122 |
Theoretical and experimental investigations on Coulomb interactions in a two-lens focussed ion beam instrument
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Bi, J.
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1997
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35 |
1-4 |
p. 439-442
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artikel
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| 123 |
The present position and future status of electron beam lithography for VLSI fabrication
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Matsuzaka, T.
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1997
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35 |
1-4 |
p. 3-9
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artikel
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| 124 |
Thermal analysis of photoresists in aid of lithographic process development
|
Tegou, E.
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1997
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35 |
1-4 |
p. 141-144
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artikel
|
| 125 |
The SCALPEL proof of concept system
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Harriott, L.R.
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|
1997
|
35 |
1-4 |
p. 477-480
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artikel
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| 126 |
Two-dimensional waveguide based photonic microstructures in GaAs and InP
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Krauss, T.F.
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1997
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35 |
1-4 |
p. 29-32
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artikel
|
| 127 |
Vibratory analysis of an X-ray mask membrane during stepping
|
Laird, D.L.
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1997
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35 |
1-4 |
p. 531-534
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artikel
|
| 128 |
Writing nanostructures with a metastable helium beam
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Nowak, S.
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1997
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35 |
1-4 |
p. 427-430
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artikel
|
| 129 |
X-ray mask temperature distribution and magnification control
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Dicks, G.
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1997
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35 |
1-4 |
p. 561-563
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artikel
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| 130 |
X-ray microfabrication of multi-level structures and 3-D patterning
|
Morris, K.J.
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1997
|
35 |
1-4 |
p. 545-548
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artikel
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