| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A Cathodoluminescence Study of the Defects Created by the Degradation of High Power AlGaAs/GaAs Multiemitter Laser Bars
|
Martín-Martín, A.
|
|
|
1108 |
1 |
|
artikel
|
| 2 |
Cathodoluminescence Study of Orientation Patterned GaAs Crystals for Nonlinear Optical Frequency Conversion by Quasi-Phase-Matching
|
Angulo, H.
|
|
|
1108 |
1 |
|
artikel
|
| 3 |
Change in Tunneling Spectrum of a Co/AlOx/Co Junction under Constant Voltage Stress
|
Horikiri, Kouhei
|
|
|
1108 |
1 |
|
artikel
|
| 4 |
Characteristics of Inter Poly Dielectric (IPD) Prepared by Plasma Oxidation Treatment of LP-CVD SiO2 Film
|
Kim, J. H.
|
|
|
1108 |
1 |
|
artikel
|
| 5 |
Characterizations of Boron Carbon Nitride and Boron Carbide Films Synthesized by PECVD
|
Wu, Qingguo
|
|
|
1108 |
1 |
|
artikel
|
| 6 |
Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification
|
Koltsov, G. I.
|
|
|
1108 |
1 |
|
artikel
|
| 7 |
Contact Resistivity of NiPtSi on n-doped Silicon Activated by Laser Annealing
|
Pagette, Francois
|
|
|
1108 |
1 |
|
artikel
|
| 8 |
Correlation Among Material Quality, Performance and Reliability of High Power and High Frequency AlGaN/GaN HFET
|
Nanishi, Yasushi
|
|
|
1108 |
1 |
|
artikel
|
| 9 |
Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-voltage and Deep Level Transient Spectroscopy Methods
|
Kikawa, Junjiroh
|
|
|
1108 |
1 |
|
artikel
|
| 10 |
Device Performance and Reliability Characterization of Interface and Bulk Effect in Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin Film Transistor
|
Choi, Kwang-il
|
|
|
1108 |
1 |
|
artikel
|
| 11 |
3-D Finite Element Simulation of a Phase-change Random Access Memory Cell with a Self-insulated Structure
|
Sun, Ke
|
|
|
1108 |
1 |
|
artikel
|
| 12 |
Effect of In as Surfactant on the Growth of AlN/GaN Distributed Bragg Reflectors by Metal Organic Vapor Phase Epitaxy
|
Rodak, L. E.
|
|
|
1108 |
1 |
|
artikel
|
| 13 |
Effect of Underlayer in the Growth of Ta2o5 Films Prepared using MOCVD Method for Metal-Insulator-Metal Capacitors in RF-BiCMOS Technology
|
Paik, Namwoong
|
|
|
1108 |
1 |
|
artikel
|
| 14 |
Fabrication and Electrical Properties of Metal/Double-Insulator/Metal Diode
|
Choi, K. N.
|
|
|
1108 |
1 |
|
artikel
|
| 15 |
Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation
|
Job, R.
|
|
|
1108 |
1 |
|
artikel
|
| 16 |
High Performance InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors
|
Wakimura, Nobuhito
|
|
|
1108 |
1 |
|
artikel
|
| 17 |
High Temperature Stable Contacts for GaN HEMTs and LEDs
|
Pearton, S. J.
|
|
|
1108 |
1 |
|
artikel
|
| 18 |
Influence of In-Situ Arsenic Doped Emitter Poly Process Conditions on RF-BiCMOS Device Parametrics
|
Egloff, Richard
|
|
|
1108 |
1 |
|
artikel
|
| 19 |
Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing
|
Hoffman, Nathan
|
|
|
1108 |
1 |
|
artikel
|
| 20 |
Investigation of Amorphous InGaZnO Based TFT Interface Properties with Synchrotron Radiation Analysis
|
Joo, Minho
|
|
|
1108 |
1 |
|
artikel
|
| 21 |
Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN
|
Chary, I.
|
|
|
1108 |
1 |
|
artikel
|
| 22 |
Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior
|
Jain, F. C.
|
|
|
1108 |
1 |
|
artikel
|
| 23 |
Neutron Transmutation Doping and Radiation Hardness for Solution-Grown Bulk and Nano-Structured ZnO
|
Flitsiyan, E.
|
|
|
1108 |
1 |
|
artikel
|
| 24 |
Nucleation and Stochiometry Dependence of Rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy
|
Constantin, Costel
|
|
|
1108 |
1 |
|
artikel
|
| 25 |
Observation of Microstructure of Grain Boundaries of ZnO Varistors using Backscattered-electron
|
Takada, Masayuki
|
|
|
1108 |
1 |
|
artikel
|
| 26 |
Optimization of GaN Barriers During the Growth of InGaN/GaN Quantum Wells at Low Temperature
|
Kasarla, Kalyan R.
|
|
|
1108 |
1 |
|
artikel
|
| 27 |
Optimization of Samarium Oxide Deposition on Gallium Arsenide
|
Stewart, Anthony D.
|
|
|
1108 |
1 |
|
artikel
|
| 28 |
Optimizing MIM Device Electrical Properties. Impact of Bottom Electrodes and High K Materials
|
Bonvalot, Marceline
|
|
|
1108 |
1 |
|
artikel
|
| 29 |
Post-stress/breakdown leakage mechanism in ultrathin high-κ (HfO2)x(SiO2)1-x/SiO2 gate stacks: A nanoscale conductive-Atomic Force Microscopy C-AFM
|
Uppal, Hasan J.
|
|
|
1108 |
1 |
|
artikel
|
| 30 |
Quantum Dot Nanodevice with Electron-Lattice Coupling
|
Král, Karel
|
|
|
1108 |
1 |
|
artikel
|
| 31 |
Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates
|
Arnaud, Wilk
|
|
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1108 |
1 |
|
artikel
|
| 32 |
Recent Progress on GaN HEMTs
|
Nakajima, Shigeru
|
|
|
1108 |
1 |
|
artikel
|
| 33 |
Source/Drain Overlap Length Dependence of VT in Thin Film Transistor on a-IGZO Channel Deposited by RF and DC Sputtering
|
Nam, Dong-Ho
|
|
|
1108 |
1 |
|
artikel
|
| 34 |
Strained Quantum Wells for P-channel InGaAs CMOS
|
Nagaiah, Padmaja
|
|
|
1108 |
1 |
|
artikel
|
| 35 |
Terahertz Ellipsometry Using Electron-Beam Based Sources
|
Hofmann, T.
|
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1108 |
1 |
|
artikel
|
| 36 |
The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma
|
Xu, X.
|
|
|
1108 |
1 |
|
artikel
|
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