| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Carrier Trapping and Scattering in Ge-Doped SiO2
|
D. I. Brinkevich
|
|
2002
|
31 |
4 |
p. 254-256
3 p.
|
artikel
|
| 2 |
Carrier Trapping and Scattering in Ge-Doped SiO2
|
Brinkevich, D. I.
|
|
2002
|
31 |
4 |
p. 254-256
|
artikel
|
| 3 |
DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation
|
V. P. Popov
|
|
2002
|
31 |
4 |
p. 232-237
6 p.
|
artikel
|
| 4 |
DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation
|
Popov, V. P.
|
|
2002
|
31 |
4 |
p. 232-237
|
artikel
|
| 5 |
Effect of Gamma Irradiation on the Surface Morphology of SOS Films
|
A. N. Kiselev
|
|
2002
|
31 |
4 |
p. 265-269
5 p.
|
artikel
|
| 6 |
Effect of Gamma Irradiation on the Surface Morphology of SOS Films
|
Kiselev, A. N.
|
|
2002
|
31 |
4 |
p. 265-269
|
artikel
|
| 7 |
Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors
|
Yu. P. Snitovskii
|
|
2002
|
31 |
4 |
p. 248-253
6 p.
|
artikel
|
| 8 |
Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors
|
Snitovskii, Yu. P.
|
|
2002
|
31 |
4 |
p. 248-253
|
artikel
|
| 9 |
Linear Standard for SEMAFM Microelectronics Dimensional Metrology in the Range 0.01100 μm
|
Ch. P. Volk
|
|
2002
|
31 |
4 |
p. 207-223
17 p.
|
artikel
|
| 10 |
Linear Standard for SEM–AFM Microelectronics Dimensional Metrology in the Range 0.01–100 μm
|
Volk, Ch. P.
|
|
2002
|
31 |
4 |
p. 207-223
|
artikel
|
| 11 |
Open Microwave Resonator Used for the Characterization of a Helicon-Source Plasma
|
Yu. P. Baryshev
|
|
2002
|
31 |
4 |
p. 243-247
5 p.
|
artikel
|
| 12 |
Open Microwave Resonator Used for the Characterization of a Helicon-Source Plasma
|
Baryshev, Yu. P.
|
|
2002
|
31 |
4 |
p. 243-247
|
artikel
|
| 13 |
Photoresists Used as Mask Materials in Ion Implantation for the CMOS Technology: Optimizing Mask Thickness
|
S. V. Gran'ko
|
|
2002
|
31 |
4 |
p. 238-242
5 p.
|
artikel
|
| 14 |
Photoresists Used as Mask Materials in Ion Implantation for the CMOS Technology: Optimizing Mask Thickness
|
Gran'ko, S. V.
|
|
2002
|
31 |
4 |
p. 238-242
|
artikel
|
| 15 |
Polarity-Dependent Electrical Mass Transfer in Silicon: The Location and Shape of the Metal-like Bridge
|
B. A. Panfilov
|
|
2002
|
31 |
4 |
p. 257-259
3 p.
|
artikel
|
| 16 |
Polarity-Dependent Electrical Mass Transfer in Silicon: The Location and Shape of the Metal-like Bridge
|
Panfilov, B. A.
|
|
2002
|
31 |
4 |
p. 257-259
|
artikel
|
| 17 |
Structural and Behavioral Irreproducibility of Solid Materials: A New Insight into the Problem
|
N. V. Bodyagin
|
|
2002
|
31 |
4 |
p. 260-264
5 p.
|
artikel
|
| 18 |
Structural and Behavioral Irreproducibility of Solid Materials: A New Insight into the Problem
|
Bodyagin, N. V.
|
|
2002
|
31 |
4 |
p. 260-264
|
artikel
|
| 19 |
ULSI Gap Filling with a Thin CVD SiO2-Based Insulator: A Review
|
V. Y. Vassiliev
|
|
2002
|
31 |
4 |
p. 224-231
8 p.
|
artikel
|
| 20 |
ULSI Gap Filling with a Thin CVD SiO2-Based Insulator: A Review
|
Vassiliev, V. Y.
|
|
2002
|
31 |
4 |
p. 224-231
|
artikel
|
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