nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Carrier Trapping and Scattering in Ge-Doped SiO2
|
D. I. Brinkevich |
|
2002 |
31 |
4 |
p. 254-256 3 p. |
artikel |
2 |
Carrier Trapping and Scattering in Ge-Doped SiO2
|
Brinkevich, D. I. |
|
2002 |
31 |
4 |
p. 254-256 |
artikel |
3 |
DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation
|
V. P. Popov |
|
2002 |
31 |
4 |
p. 232-237 6 p. |
artikel |
4 |
DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation
|
Popov, V. P. |
|
2002 |
31 |
4 |
p. 232-237 |
artikel |
5 |
Effect of Gamma Irradiation on the Surface Morphology of SOS Films
|
A. N. Kiselev |
|
2002 |
31 |
4 |
p. 265-269 5 p. |
artikel |
6 |
Effect of Gamma Irradiation on the Surface Morphology of SOS Films
|
Kiselev, A. N. |
|
2002 |
31 |
4 |
p. 265-269 |
artikel |
7 |
Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors
|
Yu. P. Snitovskii |
|
2002 |
31 |
4 |
p. 248-253 6 p. |
artikel |
8 |
Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors
|
Snitovskii, Yu. P. |
|
2002 |
31 |
4 |
p. 248-253 |
artikel |
9 |
Linear Standard for SEMAFM Microelectronics Dimensional Metrology in the Range 0.01100 μm
|
Ch. P. Volk |
|
2002 |
31 |
4 |
p. 207-223 17 p. |
artikel |
10 |
Linear Standard for SEM–AFM Microelectronics Dimensional Metrology in the Range 0.01–100 μm
|
Volk, Ch. P. |
|
2002 |
31 |
4 |
p. 207-223 |
artikel |
11 |
Open Microwave Resonator Used for the Characterization of a Helicon-Source Plasma
|
Yu. P. Baryshev |
|
2002 |
31 |
4 |
p. 243-247 5 p. |
artikel |
12 |
Open Microwave Resonator Used for the Characterization of a Helicon-Source Plasma
|
Baryshev, Yu. P. |
|
2002 |
31 |
4 |
p. 243-247 |
artikel |
13 |
Photoresists Used as Mask Materials in Ion Implantation for the CMOS Technology: Optimizing Mask Thickness
|
S. V. Gran'ko |
|
2002 |
31 |
4 |
p. 238-242 5 p. |
artikel |
14 |
Photoresists Used as Mask Materials in Ion Implantation for the CMOS Technology: Optimizing Mask Thickness
|
Gran'ko, S. V. |
|
2002 |
31 |
4 |
p. 238-242 |
artikel |
15 |
Polarity-Dependent Electrical Mass Transfer in Silicon: The Location and Shape of the Metal-like Bridge
|
B. A. Panfilov |
|
2002 |
31 |
4 |
p. 257-259 3 p. |
artikel |
16 |
Polarity-Dependent Electrical Mass Transfer in Silicon: The Location and Shape of the Metal-like Bridge
|
Panfilov, B. A. |
|
2002 |
31 |
4 |
p. 257-259 |
artikel |
17 |
Structural and Behavioral Irreproducibility of Solid Materials: A New Insight into the Problem
|
N. V. Bodyagin |
|
2002 |
31 |
4 |
p. 260-264 5 p. |
artikel |
18 |
Structural and Behavioral Irreproducibility of Solid Materials: A New Insight into the Problem
|
Bodyagin, N. V. |
|
2002 |
31 |
4 |
p. 260-264 |
artikel |
19 |
ULSI Gap Filling with a Thin CVD SiO2-Based Insulator: A Review
|
V. Y. Vassiliev |
|
2002 |
31 |
4 |
p. 224-231 8 p. |
artikel |
20 |
ULSI Gap Filling with a Thin CVD SiO2-Based Insulator: A Review
|
Vassiliev, V. Y. |
|
2002 |
31 |
4 |
p. 224-231 |
artikel |