| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Double-Junction Schottky Diodes Using a Ti/Si/Al Structure
|
D. A. Andreev
|
|
2002
|
31 |
2 |
p. 122-125
4 p.
|
artikel
|
| 2 |
Double-Junction Schottky Diodes Using a Ti/Si/Al Structure
|
Andreev, D. A.
|
|
2002
|
31 |
2 |
p. 122-125
|
artikel
|
| 3 |
Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures
|
V. V. Luchinin
|
|
2002
|
31 |
2 |
p. 110-115
6 p.
|
artikel
|
| 4 |
Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures
|
Luchinin, V. V.
|
|
2002
|
31 |
2 |
p. 110-115
|
artikel
|
| 5 |
Evolution of Dopant Concentration from a Gaussian Profile in a Nonuniform Temperature Field
|
V. I. Rudakov
|
|
2002
|
31 |
2 |
p. 97-102
6 p.
|
artikel
|
| 6 |
Evolution of Dopant Concentration from a Gaussian Profile in a Nonuniform Temperature Field
|
Rudakov, V. I.
|
|
2002
|
31 |
2 |
p. 97-102
|
artikel
|
| 7 |
In Celebration of the 70th Birthday of Igor G. Neizvestny
|
|
|
2002
|
31 |
2 |
p. 69-69
1 p.
|
artikel
|
| 8 |
In Celebration of the 70th Birthday of Igor G. Neizvestny
|
|
|
2002
|
31 |
2 |
p. 69
|
artikel
|
| 9 |
Local Ellipsometric Inspection of Small Windows
|
E. S. Lonskii
|
|
2002
|
31 |
2 |
p. 126-129
4 p.
|
artikel
|
| 10 |
Local Ellipsometric Inspection of Small Windows
|
Lonskii, E. S.
|
|
2002
|
31 |
2 |
p. 126-129
|
artikel
|
| 11 |
Model and Logic Gates for Quantum Computing with a Two-Level System in a Resonant-Frequency Field
|
A. L. Danilyuk
|
|
2002
|
31 |
2 |
p. 116-121
6 p.
|
artikel
|
| 12 |
Model and Logic Gates for Quantum Computing with a Two-Level System in a Resonant-Frequency Field
|
Danilyuk, A. L.
|
|
2002
|
31 |
2 |
p. 116-121
|
artikel
|
| 13 |
Porous-Silicon Formation in HFHNO3H2O Etchants
|
E. A. Starostina
|
|
2002
|
31 |
2 |
p. 88-96
9 p.
|
artikel
|
| 14 |
Porous-Silicon Formation in HF–HNO3–H2O Etchants
|
Starostina, E. A.
|
|
2002
|
31 |
2 |
p. 88-96
|
artikel
|
| 15 |
Solid-Phase Reactions in the Thermal Oxidation of Ni/GaAs Heterostructures
|
I. Ya. Mittova
|
|
2002
|
31 |
2 |
p. 84-87
4 p.
|
artikel
|
| 16 |
Solid-Phase Reactions in the Thermal Oxidation of Ni/GaAs Heterostructures
|
Mittova, I. Ya.
|
|
2002
|
31 |
2 |
p. 84-87
|
artikel
|
| 17 |
Statistical Process Control in IC Manufacture: A Technique for Small-Batch, Intermittent Production
|
K. K. Doroshevich
|
|
2002
|
31 |
2 |
p. 130-136
7 p.
|
artikel
|
| 18 |
Statistical Process Control in IC Manufacture: A Technique for Small-Batch, Intermittent Production
|
Doroshevich, K. K.
|
|
2002
|
31 |
2 |
p. 130-136
|
artikel
|
| 19 |
Thermal Oxidation of InP Promoted by the Formation of N2O
|
I. Ya. Mittova
|
|
2002
|
31 |
2 |
p. 79-83
5 p.
|
artikel
|
| 20 |
Thermal Oxidation of InP Promoted by the Formation of N2O
|
Mittova, I. Ya.
|
|
2002
|
31 |
2 |
p. 79-83
|
artikel
|
| 21 |
Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size
|
I. G. Neizvestny
|
|
2002
|
31 |
2 |
p. 70-78
9 p.
|
artikel
|
| 22 |
Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size
|
Neizvestny, I. G.
|
|
2002
|
31 |
2 |
p. 70-78
|
artikel
|
| 23 |
Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy
|
A. A. Bukharaev
|
|
2002
|
31 |
2 |
p. 103-109
7 p.
|
artikel
|
| 24 |
Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy
|
Bukharaev, A. A.
|
|
2002
|
31 |
2 |
p. 103-109
|
artikel
|
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