no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
1 |
Double-Junction Schottky Diodes Using a Ti/Si/Al Structure
|
D. A. Andreev |
|
2002 |
31 |
2 |
p. 122-125 4 p. |
article |
2 |
Double-Junction Schottky Diodes Using a Ti/Si/Al Structure
|
Andreev, D. A. |
|
2002 |
31 |
2 |
p. 122-125 |
article |
3 |
Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures
|
V. V. Luchinin |
|
2002 |
31 |
2 |
p. 110-115 6 p. |
article |
4 |
Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures
|
Luchinin, V. V. |
|
2002 |
31 |
2 |
p. 110-115 |
article |
5 |
Evolution of Dopant Concentration from a Gaussian Profile in a Nonuniform Temperature Field
|
V. I. Rudakov |
|
2002 |
31 |
2 |
p. 97-102 6 p. |
article |
6 |
Evolution of Dopant Concentration from a Gaussian Profile in a Nonuniform Temperature Field
|
Rudakov, V. I. |
|
2002 |
31 |
2 |
p. 97-102 |
article |
7 |
In Celebration of the 70th Birthday of Igor G. Neizvestny
|
|
|
2002 |
31 |
2 |
p. 69-69 1 p. |
article |
8 |
In Celebration of the 70th Birthday of Igor G. Neizvestny
|
|
|
2002 |
31 |
2 |
p. 69 |
article |
9 |
Local Ellipsometric Inspection of Small Windows
|
E. S. Lonskii |
|
2002 |
31 |
2 |
p. 126-129 4 p. |
article |
10 |
Local Ellipsometric Inspection of Small Windows
|
Lonskii, E. S. |
|
2002 |
31 |
2 |
p. 126-129 |
article |
11 |
Model and Logic Gates for Quantum Computing with a Two-Level System in a Resonant-Frequency Field
|
A. L. Danilyuk |
|
2002 |
31 |
2 |
p. 116-121 6 p. |
article |
12 |
Model and Logic Gates for Quantum Computing with a Two-Level System in a Resonant-Frequency Field
|
Danilyuk, A. L. |
|
2002 |
31 |
2 |
p. 116-121 |
article |
13 |
Porous-Silicon Formation in HFHNO3H2O Etchants
|
E. A. Starostina |
|
2002 |
31 |
2 |
p. 88-96 9 p. |
article |
14 |
Porous-Silicon Formation in HF–HNO3–H2O Etchants
|
Starostina, E. A. |
|
2002 |
31 |
2 |
p. 88-96 |
article |
15 |
Solid-Phase Reactions in the Thermal Oxidation of Ni/GaAs Heterostructures
|
I. Ya. Mittova |
|
2002 |
31 |
2 |
p. 84-87 4 p. |
article |
16 |
Solid-Phase Reactions in the Thermal Oxidation of Ni/GaAs Heterostructures
|
Mittova, I. Ya. |
|
2002 |
31 |
2 |
p. 84-87 |
article |
17 |
Statistical Process Control in IC Manufacture: A Technique for Small-Batch, Intermittent Production
|
K. K. Doroshevich |
|
2002 |
31 |
2 |
p. 130-136 7 p. |
article |
18 |
Statistical Process Control in IC Manufacture: A Technique for Small-Batch, Intermittent Production
|
Doroshevich, K. K. |
|
2002 |
31 |
2 |
p. 130-136 |
article |
19 |
Thermal Oxidation of InP Promoted by the Formation of N2O
|
I. Ya. Mittova |
|
2002 |
31 |
2 |
p. 79-83 5 p. |
article |
20 |
Thermal Oxidation of InP Promoted by the Formation of N2O
|
Mittova, I. Ya. |
|
2002 |
31 |
2 |
p. 79-83 |
article |
21 |
Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size
|
I. G. Neizvestny |
|
2002 |
31 |
2 |
p. 70-78 9 p. |
article |
22 |
Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size
|
Neizvestny, I. G. |
|
2002 |
31 |
2 |
p. 70-78 |
article |
23 |
Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy
|
A. A. Bukharaev |
|
2002 |
31 |
2 |
p. 103-109 7 p. |
article |
24 |
Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy
|
Bukharaev, A. A. |
|
2002 |
31 |
2 |
p. 103-109 |
article |