| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anisotropic lattice coherency of GaAs nanocrystals deposited on Si(100) surface by molecular beam epitaxy
|
Usui, Hiroyuki
|
|
2007
|
19 |
2 |
p. 131-135
|
artikel
|
| 2 |
Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates
|
McNeill, D. W.
|
|
2007
|
19 |
2 |
p. 119-123
|
artikel
|
| 3 |
Au agglomerates observed in the out-diffusion process of supersaturated high-temperature substitutional Au in Si
|
Morooka, M.
|
|
2007
|
19 |
2 |
p. 111-114
|
artikel
|
| 4 |
Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current transients
|
Hayama, K.
|
|
2007
|
19 |
2 |
p. 161-165
|
artikel
|
| 5 |
Degradation of SiC-MESFETs by irradiation
|
Ohyama, H.
|
|
2007
|
19 |
2 |
p. 175-178
|
artikel
|
| 6 |
Dislocations at the interface between sapphire and GaN
|
Lankinen, A.
|
|
2007
|
19 |
2 |
p. 143-148
|
artikel
|
| 7 |
Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy
|
Säynätjoki, A.
|
|
2007
|
19 |
2 |
p. 149-154
|
artikel
|
| 8 |
Dislocations of ZnO single crystals examined by X-ray topography and photoluminescence
|
Yoshino, K.
|
|
2007
|
19 |
2 |
p. 199-201
|
artikel
|
| 9 |
Double-polysilicon self-aligned lateral bipolar transistors
|
Pengpad, P.
|
|
2007
|
19 |
2 |
p. 183-187
|
artikel
|
| 10 |
Editorial
|
McNally, Patrick
|
|
2007
|
19 |
2 |
p. 97
|
artikel
|
| 11 |
Electrical studies on sputtered CuCl thin films
|
Natarajan, Gomathi
|
|
2007
|
19 |
2 |
p. 103-106
|
artikel
|
| 12 |
GaN based high temperature strain gauges
|
Tilak, V.
|
|
2007
|
19 |
2 |
p. 195-198
|
artikel
|
| 13 |
High temperature assessment of nitride-based devices
|
Cuerdo, R.
|
|
2007
|
19 |
2 |
p. 189-193
|
artikel
|
| 14 |
In-line characterization of dielectric constant and leakage currents of low-k films with corona charge method
|
Fossati, D.
|
|
2007
|
19 |
2 |
p. 115-118
|
artikel
|
| 15 |
In-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
|
Reentilä, O.
|
|
2007
|
19 |
2 |
p. 137-142
|
artikel
|
| 16 |
Morphological, optical and electrical properties of γ CuCl deposited by vacuum evaporation
|
Lucas, Francis Olabanji
|
|
2007
|
19 |
2 |
p. 99-101
|
artikel
|
| 17 |
Negative photoinduced current and negative differential characteristics of new optoelectronic sensors with InAs/GaAs nanostructure for visual recognition
|
Matsui, Y.
|
|
2007
|
19 |
2 |
p. 125-130
|
artikel
|
| 18 |
Non-equilibrium Green’s function method for modeling quantum electron transport in nano-scale devices with anisotropic multiband structure
|
Fitriawan, Helmy
|
|
2007
|
19 |
2 |
p. 107-110
|
artikel
|
| 19 |
Optical property and crystalline quarity of Si and Ge added β-Ga2O3 thin films
|
Takakura, K.
|
|
2007
|
19 |
2 |
p. 167-170
|
artikel
|
| 20 |
Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation
|
Ohyama, H.
|
|
2007
|
19 |
2 |
p. 171-173
|
artikel
|
| 21 |
Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition
|
Iamraksa, P.
|
|
2007
|
19 |
2 |
p. 179-182
|
artikel
|
| 22 |
Structural, optical and electrical characterization of undoped ZnMgO film grown by spray pyrolysis method
|
Yoshino, K.
|
|
2007
|
19 |
2 |
p. 203-209
|
artikel
|
| 23 |
UV Raman spectroscopy of group IV nanocrystals embedded in a SiO2 matrix
|
Prieto, A. C.
|
|
2007
|
19 |
2 |
p. 155-159
|
artikel
|
Tijdschrift beschrijving