Dislocations at the interface between sapphire and GaN
Titel:
Dislocations at the interface between sapphire and GaN
Auteur:
Lankinen, A. Lang, T. Suihkonen, S. Svensk, O. Säynätjoki, A. Tuomi, T. O. McNally, P. J. Odnoblyudov, M. Bougrov, V. Danilewsky, A. N. Bergman, P. Simon, R.
Verschenen in:
Journal of materials science. Materials in electronics