| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review
|
Stephen Karrer OLeary
|
|
2004
|
15 |
7 |
p. 401-410
10 p.
|
artikel
|
| 2 |
An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review
|
O'Leary, Stephen Karrer
|
|
2004
|
15 |
7 |
p. 401-410
|
artikel
|
| 3 |
Dissolution kinetics and diffusivity of silver in glassy layers for hybrid microelectronics
|
M. Prudenziati
|
|
2004
|
15 |
7 |
p. 447-453
7 p.
|
artikel
|
| 4 |
Dissolution kinetics and diffusivity of silver in glassy layers for hybrid microelectronics
|
Prudenziati, M.
|
|
2004
|
15 |
7 |
p. 447-453
|
artikel
|
| 5 |
Electrical, optical and structural characterization of high-k dielectric ZrO2 thin films deposited by the pyrosol technique
|
G. Reyna-García
|
|
2004
|
15 |
7 |
p. 439-446
8 p.
|
artikel
|
| 6 |
Electrical, optical and structural characterization of high-k dielectric ZrO2 thin films deposited by the pyrosol technique
|
Reyna-García, G.
|
|
2004
|
15 |
7 |
p. 439-446
|
artikel
|
| 7 |
Electrochemical studies of n-Cd1−xMnxSe thin film photodetector
|
V. S. Karande
|
|
2004
|
15 |
7 |
p. 419-423
5 p.
|
artikel
|
| 8 |
Electrochemical studies of n-Cd1−xMnxSe thin film photodetector
|
Karande, V. S.
|
|
2004
|
15 |
7 |
p. 419-423
|
artikel
|
| 9 |
Preparation and characterization of gold/poly(vinyl alcohol)/MoS2 intercalation nanocomposite
|
Tingmei Wang
|
|
2004
|
15 |
7 |
p. 435-438
4 p.
|
artikel
|
| 10 |
Preparation and characterization of gold/poly(vinyl alcohol)/MoS2 intercalation nanocomposite
|
Wang, Tingmei
|
|
2004
|
15 |
7 |
p. 435-438
|
artikel
|
| 11 |
Properties and structure of semiconducting sodium iron germanoborate glasses
|
M. M. El-Desoky
|
|
2004
|
15 |
7 |
p. 425-433
9 p.
|
artikel
|
| 12 |
Properties and structure of semiconducting sodium iron germanoborate glasses
|
El-Desoky, M. M.
|
|
2004
|
15 |
7 |
p. 425-433
|
artikel
|
| 13 |
Redistribution of P atoms in oxidized P-implanted silicon during annealing
|
Katsuhiro Yokota
|
|
2004
|
15 |
7 |
p. 455-461
7 p.
|
artikel
|
| 14 |
Redistribution of P atoms in oxidized P-implanted silicon during annealing
|
Yokota*, Katsuhiro
|
|
2004
|
15 |
7 |
p. 455-461
|
artikel
|
| 15 |
Structural properties of relaxed Ge buffer layers on Si(0 0 1): effect of layer thickness and low temperature Si initial buffer
|
T. Myrberg
|
|
2004
|
15 |
7 |
p. 411-417
7 p.
|
artikel
|
| 16 |
Structural properties of relaxed Ge buffer layers on Si(0 0 1): effect of layer thickness and low temperature Si initial buffer
|
Myrberg, T.
|
|
2004
|
15 |
7 |
p. 411-417
|
artikel
|
| 17 |
Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO2, O3, and H2S. Part II: Application as gas sensors
|
O. Berger
|
|
2004
|
15 |
7 |
p. 483-493
11 p.
|
artikel
|
| 18 |
Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO2, O3, and H2S. Part II: Application as gas sensors
|
Berger, O.
|
|
2004
|
15 |
7 |
p. 483-493
|
artikel
|
| 19 |
Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO2, O3 and H2S. Part I: Preparation and microstructural characterization of the tungsten-oxide thin films
|
O. Berger
|
|
2004
|
15 |
7 |
p. 463-482
20 p.
|
artikel
|
| 20 |
Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO2, O3 and H2S. Part I: Preparation and microstructural characterization of the tungsten-oxide thin films
|
Berger, O.
|
|
2004
|
15 |
7 |
p. 463-482
|
artikel
|
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