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Structural properties of relaxed Ge buffer layers on Si(0 0 1): effect of layer thickness and low temperature Si initial buffer |
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Titel: |
Structural properties of relaxed Ge buffer layers on Si(0 0 1): effect of layer thickness and low temperature Si initial buffer |
Auteur: |
Myrberg, T. Jacob, A. P. Nur, O. Friesel, M. Willander, M. Patel, C. J. Campidelli, Y. Hernandez, C. Kermarrec, O. Bensahel, D. |
Verschenen in: |
Journal of materials science. Materials in electronics |
Paginering: |
Jaargang 15 (2004) nr. 7 pagina's 411-417 |
Jaar: |
2004 |
Inhoud: |
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Uitgever: |
Kluwer Academic Publishers, Boston |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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