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                             21 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Active media for optical data processing in optoelectronic devices G. Vle
 1999
 10 5 p. 451-454
4 p.
 artikel
2 Effects of strain rate and temperature on the stressstrain response of solder alloys W. J. Plumbridge
 1999
 10 5 p. 461-468
8 p.
 artikel
3 Electrical carrier activation in \hbox{Zn}^{+} implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere C. Pizzuto
 1999
 10 5 p. 407-411
5 p.
 artikel
4 Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed \hbox{p}^{+}\hbox{n} InP junctions L. Quintanilla
 1999
 10 5 p. 413-418
6 p.
 artikel
5 Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality \hbox{Al/SiN}_{x}\hbox{/InP} MIS structure fabrication S. Duenas
 1999
 10 5 p. 373-377
5 p.
 artikel
6 Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells I. M. Dharmadasa
 1999
 10 5 p. 441-445
5 p.
 artikel
7 Growth and mechanical properties of GeSi bulk crystals I. Yonenaga
 1999
 10 5 p. 329-333
5 p.
 artikel
8 High dielectric \hbox{AlN/Al}_{2}\hbox{O}_{3} composite powder using a plasma spray approach for microelectronics application F. Y. C. Boey
 1999
 10 5 p. 455-459
5 p.
 artikel
9 Impact of high energy particle irradiation on the electrical performance of \hbox{Si}_{1-x}\hbox{Ge}_{x} epitaxial diodes H. Ohyama
 1999
 10 5 p. 335-337
3 p.
 artikel
10 Ion beam synthesis of compound nanoparticles in \hbox{SiO}_{2} A. Pe´rez-Rodri´guez
 1999
 10 5 p. 385-391
7 p.
 artikel
11 Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma M. J. Herna´ndez
 1999
 10 5 p. 393-398
6 p.
 artikel
12 Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: electrical characterization A. Matsumura
 1999
 10 5 p. 365-371
7 p.
 artikel
13 Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers M. Hammadi
 1999
 10 5 p. 399-402
4 p.
 artikel
14 Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy P. J. Mcnally
 1999
 10 5 p. 351-358
8 p.
 artikel
15 Non-equilibrium thermodynamic analysis on the behaviour of point defects in growing silicon crystals: effects of stress K. Tanahashi
 1999
 10 5 p. 359-363
5 p.
 artikel
16 Point defect redistribution in \hbox{Si}_{1-x}\hbox{Ge}_{x} alloys A. D. N. Paine
 1999
 10 5 p. 339-343
5 p.
 artikel
17 Radiation damage of \hbox{In}_{0.53}\hbox{Ga}_{0.47}As photodiodes by high energy particles H. Ohyam
 1999
 10 5 p. 403-405
3 p.
 artikel
18 Recent developments in the design and fabrication of visible photonic band gap waveguide devices M. D. B. Charlton
 1999
 10 5 p. 429-440
12 p.
 artikel
19 Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy J. M. Bonar
 1999
 10 5 p. 345-349
5 p.
 artikel
20 Tunable microcavity based on InP/air Bragg mirrors R. LE Dantec
 1999
 10 5 p. 447-450
4 p.
 artikel
21 Use of anodic tantalum pentoxide for high-density capacitor fabrication S. Duenas
 1999
 10 5 p. 379-384
6 p.
 artikel
                             21 gevonden resultaten
 
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