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Journal description
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Details for article 14 of 21 found articles
| Title: |
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy |
| Author: |
P. J. Mcnally J. W. Curley M. Bolt A. Reader T. Tuomi R. Rantama¨ki A. N. Danilewsky I. DeWolf |
| Appeared in: |
Journal of materials science. Materials in electronics |
| Paging: | Volume 10 (1999) nr. 5 pages 8 p. |
| Year: |
1999-07 |
| Contents: | |
| Publisher: |
Kluwer Academic Publishers, Boston, U.S.A |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 21 found articles
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