| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A many-particle quantum-trajectory approach for modeling electron transport and its correlations in nanoscale devices
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Oriols, Xavier
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6 |
1-3 |
p. 239-242
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artikel
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| 2 |
A multi-purpose Schrödinger-Poisson Solver for TCAD applications
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Karner, Markus
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6 |
1-3 |
p. 179-182
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artikel
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| 3 |
Analysis of nano-scale MOSFET including uniaxial and biaxial strain
|
Tanabe, Ryo
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6 |
1-3 |
p. 49-53
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artikel
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| 4 |
Analysis of the influence of band non-parabolicity on the subband structure of a Si quantum wire
|
Gómez-Campos, F. M.
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6 |
1-3 |
p. 149-152
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artikel
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| 5 |
Blinking mechanism of colloidal semiconductor quantum dots: Blinking mechanisms
|
Dutta, Mitra
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6 |
1-3 |
p. 301-304
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artikel
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| 6 |
Boundary condition at the junction
|
Harmer, Mark
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6 |
1-3 |
p. 153-157
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artikel
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| 7 |
Circuit modeling of flux qubits interacting with superconducting waveguides
|
Csaba, G.
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6 |
1-3 |
p. 105-108
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artikel
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| 8 |
Classical and quantum mechanical transport simulations in open quantum dots
|
Brunner, Roland
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6 |
1-3 |
p. 93-96
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artikel
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| 9 |
Computational aspects of the three-dimensional feature-scale simulation of silicon-nanowire field-effect sensors for DNA detection
|
Heitzinger, Clemens
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6 |
1-3 |
p. 387-390
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artikel
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| 10 |
Computation of the I/V characteristic of a molecular switch
|
Cacelli, Ivo
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6 |
1-3 |
p. 353-356
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artikel
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| 11 |
Conductance of meandering wires
|
Cancellieri, Emiliano
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6 |
1-3 |
p. 73-76
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artikel
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| 12 |
Conductance of nanowires: Phonon effects
|
Stroscio, Michael A.
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6 |
1-3 |
p. 247-249
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artikel
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| 13 |
Continuum vs. particle simulations of model nano-pores
|
Millar, C.
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6 |
1-3 |
p. 367-371
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artikel
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| 14 |
Control of Fano resonances and phase of a multi-terminal Aharanov-Bohm ring with three embedded quantum dots
|
Hedin, Eric R.
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6 |
1-3 |
p. 167-170
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artikel
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| 15 |
Convergence of density functional iterative procedures with a Newton-Raphson algorithm
|
Jerome, J. W.
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6 |
1-3 |
p. 349-352
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artikel
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| 16 |
DEPFET sensors, A Test Case To Study 3d Effects
|
Gärtner, Klaus
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6 |
1-3 |
p. 275-278
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artikel
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| 17 |
Determination of single mode condition in dielectric rib waveguide with large cross section by finite element analysis
|
de Laurentis, Martina
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6 |
1-3 |
p. 285-287
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artikel
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| 18 |
Developing a full 3D NEGF simulator with random dopant and interface roughness
|
Martinez, A.
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6 |
1-3 |
p. 215-218
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artikel
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| 19 |
Dissipative transport in CNTFETs
|
Pourfath, Mahdi
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6 |
1-3 |
p. 321-324
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artikel
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| 20 |
3D Monte-Carlo device simulations using an effective quantum potential including electron-electron interactions
|
Heitzinger, Clemens
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6 |
1-3 |
p. 15-18
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artikel
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| 21 |
3D simulation of a silicon quantum dot in a magnetic field based on current spin density functional theory
|
Lisieri, M.
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6 |
1-3 |
p. 191-194
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artikel
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| 22 |
Effect of elastic processes and ballistic recovery in silicon nanowire transistors
|
Basu, D.
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6 |
1-3 |
p. 113-116
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artikel
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| 23 |
Eigenstate fitting in the k · p method
|
López, H.
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6 |
1-3 |
p. 195-198
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artikel
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| 24 |
Electronic and transport properties of silicon nanowires
|
Sacconi, F.
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6 |
1-3 |
p. 329-333
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artikel
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| 25 |
Electron injection model for the particle simulation of 3D, 2D, and 1D nanoscale FETs
|
Oriols, X.
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6 |
1-3 |
p. 7-10
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artikel
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| 26 |
Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering
|
O’Regan, Terrance
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6 |
1-3 |
p. 81-84
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artikel
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| 27 |
Electron transport in self-switching nano-diodes
|
Xu, Kun-Yuan
|
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6 |
1-3 |
p. 59-62
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artikel
|
| 28 |
Electrothermal Monte Carlo simulation of submicron wurtzite GaN/AlGaN HEMTs
|
Sadi, Toufik
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6 |
1-3 |
p. 35-39
|
artikel
|
| 29 |
EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires
|
Mitin, Vladimir
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6 |
1-3 |
p. 227-230
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artikel
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| 30 |
Exploring free-energy profiles through ion channels: Comparison on a test case
|
Piccinini, Enrico
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6 |
1-3 |
p. 373-376
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artikel
|
| 31 |
Extension of the R-Σ method to any order
|
Rudan, M.
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6 |
1-3 |
p. 251-254
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artikel
|
| 32 |
Fast inverse using nested dissection for NEGF
|
Li, S.
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6 |
1-3 |
p. 187-190
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artikel
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| 33 |
First-principles calculations of mobilities in ultrathin double-gate MOSFETs
|
Evans, M. H.
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6 |
1-3 |
p. 85-88
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artikel
|
| 34 |
Free-carrier grating due to the optical phonon emission in InP n+nn+ structures
|
Gružinskis, Viktoras
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6 |
1-3 |
p. 11-14
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artikel
|
| 35 |
Generation of even harmonics of sub-THz radiation in bulk GaAs in the presence of a static electric field
|
Adorno, D. Persano
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6 |
1-3 |
p. 31-34
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artikel
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| 36 |
Heat dissipation and non-equilibrium phonon distributions in molecular devices
|
Pecchia, A.
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6 |
1-3 |
p. 335-339
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artikel
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| 37 |
Improved simulation of VCSEL distributed Bragg reflectors
|
Leonardis, Francesco De
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6 |
1-3 |
p. 289-292
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artikel
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| 38 |
Improving the efficiency of BD algorithms for biological systems simulations
|
Marreiro, David
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6 |
1-3 |
p. 377-380
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artikel
|
| 39 |
Indirect optimal control of a double quantum dot
|
Pötz, Walter
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6 |
1-3 |
p. 171-174
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artikel
|
| 40 |
Inelastic cotunneling through an interacting quantum dot with a quantum Langevin equation approach
|
Dong, Bing
|
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6 |
1-3 |
p. 129-132
|
artikel
|
| 41 |
Influence of hot Phonons on the Transport Properties of Single-Wall Carbon Nanotubes
|
Auer, Christoph
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6 |
1-3 |
p. 325-328
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artikel
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| 42 |
Input and intrinsic device modeling of VCSELs
|
Minoglou, K.
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6 |
1-3 |
p. 309-312
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artikel
|
| 43 |
Interband tunneling description of holes in Wurtzite GaN at high electric fields
|
Hjelm, Mats
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6 |
1-3 |
p. 163-166
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artikel
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| 44 |
Investigation of the nonlinearity properties of the DC I-V characteristics of metal-insulator-metal (MIM) tunnel diodes with double-layer insulators
|
Hegyi, Barnabás
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6 |
1-3 |
p. 159-162
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artikel
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| 45 |
Issues in the modeling of carbon nanotube FETs: Structure, gate thickness, and azimuthal asymmetry
|
John, D. L.
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6 |
1-3 |
p. 175-178
|
artikel
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| 46 |
Micromagnetic simulation of current-driven domain wall propagation
|
Csaba, G.
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6 |
1-3 |
p. 121-124
|
artikel
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| 47 |
Modeling the Inelastic Scattering Effect on the Resonant Tunneling Current
|
Majkusiak, Bogdan
|
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6 |
1-3 |
p. 207-210
|
artikel
|
| 48 |
Monte Carlo modeling of X-valley leakage in quantum cascade lasers
|
Gao, Xujiao
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|
6 |
1-3 |
p. 305-308
|
artikel
|
| 49 |
Monte Carlo simulation of 2D TASER
|
Starikov, Evgenij
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6 |
1-3 |
p. 45-48
|
artikel
|
| 50 |
Monte Carlo simulation of harmonic generation in GaAs structures operating under large-signal conditions
|
Adorno, D. Persano
|
|
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6 |
1-3 |
p. 27-30
|
artikel
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| 51 |
Monte Carlo simulation of resonant phonon THz quantum cascade lasers
|
Jirauschek, Christian
|
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6 |
1-3 |
p. 267-270
|
artikel
|
| 52 |
NEGF simulation of the RTD bistability
|
Voves, Jan
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6 |
1-3 |
p. 259-262
|
artikel
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| 53 |
Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancydefects
|
Neophytou, Neophytos
|
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6 |
1-3 |
p. 317-320
|
artikel
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| 54 |
Numerical simulation of hole transport in silicon nanostructures
|
Minari, Hideki
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6 |
1-3 |
p. 223-225
|
artikel
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| 55 |
Numerical simulations of propagation of SCWs in strained Si/SiGe heterostructures at 4.2 and 77 K
|
Garcia-B., Abel
|
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6 |
1-3 |
p. 137-140
|
artikel
|
| 56 |
On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering
|
Ferrari, Giulio
|
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6 |
1-3 |
p. 1-5
|
artikel
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| 57 |
Pearson versus gaussian effective potentials for quantum-corrected Monte-Carlo simulation
|
Jaud, M.-A.
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6 |
1-3 |
p. 19-22
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artikel
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| 58 |
Percolation current in organic semiconductors
|
Li, L.
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6 |
1-3 |
p. 357-361
|
artikel
|
| 59 |
Perimeter recombination in thin film solar cells
|
Belghachi, Abderrahmane
|
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6 |
1-3 |
p. 279-283
|
artikel
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| 60 |
Perspectives on solid-state flying qubits
|
Bertoni, Andrea
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6 |
1-3 |
p. 67-72
|
artikel
|
| 61 |
Phonon exacerbated quantum interference effects in III-V nanowire transistors
|
Gilbert, M. J.
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6 |
1-3 |
p. 141-144
|
artikel
|
| 62 |
Physical modeling of electron mobility enhancement for arbitrarily strained silicon
|
Ungersboeck, Enzo
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6 |
1-3 |
p. 55-58
|
artikel
|
| 63 |
Physical modeling of hole mobility in silicon inversion layers under uniaxial stress
|
Zhao, Ji
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|
6 |
1-3 |
p. 63-65
|
artikel
|
| 64 |
Quantized conductance without reservoirs: Method of the nonequilibrium statistical operator
|
Sorée, Bart
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|
|
6 |
1-3 |
p. 255-258
|
artikel
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| 65 |
Quantum corrections to semiclassical transport in nanoscale devices using entropy principles
|
Bourgade, J. P.
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6 |
1-3 |
p. 117-120
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artikel
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| 66 |
Quantum Ensemble Monte Carlo simulation of silicon-based nanodevices
|
Sampedro, C.
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6 |
1-3 |
p. 41-44
|
artikel
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| 67 |
Quantum-mechanical effects in multiple-gate MOSFETs
|
Godoy, A.
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6 |
1-3 |
p. 145-148
|
artikel
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| 68 |
Quasiparticle correction for electronic transport in molecular wires
|
Gagliardi, Alessio
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6 |
1-3 |
p. 345-348
|
artikel
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| 69 |
Scattering effect in optical microring resonators
|
Leonardis, Francesco De
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|
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6 |
1-3 |
p. 293-296
|
artikel
|
| 70 |
Self-consistent quantum transport theory: Applications and assessment of approximate models
|
Kubis, Tillmann
|
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6 |
1-3 |
p. 183-186
|
artikel
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| 71 |
Self-consistent treatment of quantum transport in 10 nm FinFET using Contact Block Reduction (CBR) method
|
Khan, H.
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6 |
1-3 |
p. 77-80
|
artikel
|
| 72 |
Shockley-Ramo theorem measures conformation changes of ion channels and proteins
|
Eisenberg, Bob
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6 |
1-3 |
p. 363-365
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artikel
|
| 73 |
Shot noise in resonant tunneling diodes using the non-equilibrium Green’s functions calculation
|
Do, V. Nam
|
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6 |
1-3 |
p. 125-128
|
artikel
|
| 74 |
Shot noise in single open ion channels: A computational approach based on atomistic simulations
|
Brunetti, R.
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6 |
1-3 |
p. 391-394
|
artikel
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| 75 |
Shot noise in transport through quantum dots: Clean versus disordered samples
|
Aigner, Florian
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6 |
1-3 |
p. 109-111
|
artikel
|
| 76 |
Simulation of a high speed interferometer optical modulator in polymer materials
|
Dell’Olio, Francesco
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6 |
1-3 |
p. 297-300
|
artikel
|
| 77 |
Simulation of a resonant tunneling diode using an entropic quantum drift-diffusion model
|
Degond, Pierre
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6 |
1-3 |
p. 133-136
|
artikel
|
| 78 |
Simulation of high-field magnetotransport in non-planar 2D electron systems
|
Meyer, Gregory J.
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6 |
1-3 |
p. 219-222
|
artikel
|
| 79 |
Simulation of quantum-ballistic nanoswitches
|
Heigl, Alexander
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6 |
1-3 |
p. 97-100
|
artikel
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| 80 |
Simulation of the entanglement creation for identical particles scattering in a 2D system
|
Buscemi, Fabrizio
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6 |
1-3 |
p. 89-92
|
artikel
|
| 81 |
Simulation of the Rashba effect in a Multiband Quantum Structure
|
Morandi, Omar
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6 |
1-3 |
p. 231-234
|
artikel
|
| 82 |
Single-mode performance analysis for vertical-cavity surface-emitting lasers
|
Odermatt, Stefan
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6 |
1-3 |
p. 263-266
|
artikel
|
| 83 |
Spontaneous polarization effects in nanoscale wurtzite structures
|
Yamanaka, Takayuki
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6 |
1-3 |
p. 313-316
|
artikel
|
| 84 |
Steering of a dissipative qubit by direct inversion
|
Wenin, Markus
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6 |
1-3 |
p. 271-274
|
artikel
|
| 85 |
Temporal analysis of valence & electrostatics in ion-motive sodium pump
|
Fonseca, J.
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6 |
1-3 |
p. 381-385
|
artikel
|
| 86 |
The Rashba effect and non-Abelian phases in quantum wire devices
|
Cummings, A. W.
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6 |
1-3 |
p. 101-104
|
artikel
|
| 87 |
Threshold energy and impact ionization scattering rate calculations for strained silicon
|
May, C.
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6 |
1-3 |
p. 23-26
|
artikel
|
| 88 |
Tight-binding and methods in carbon nanotubes: features, comparison and improvements
|
Marconcini, Paolo
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6 |
1-3 |
p. 211-214
|
artikel
|
| 89 |
Tight-binding calculations of Ge-nanowire bandstructures
|
Bescond, Marc
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6 |
1-3 |
p. 341-344
|
artikel
|
| 90 |
Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs
|
Luisier, Mathieu
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6 |
1-3 |
p. 199-202
|
artikel
|
| 91 |
Tunneling CNTFETs
|
Pourfath, Mahdi
|
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6 |
1-3 |
p. 243-246
|
artikel
|
| 92 |
Tunneling enhancement through a barrier surrounded by a mesoscopic cavity
|
Macucci, Massimo
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6 |
1-3 |
p. 203-206
|
artikel
|
| 93 |
Ultrafast Wigner transport in quantum wires
|
Nedjalkov, Mihail
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6 |
1-3 |
p. 235-238
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artikel
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