|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 87 of 93 found articles
| Title: |
Threshold energy and impact ionization scattering rate calculations for strained silicon |
| Author: |
May, C. Bufler, F. M. |
| Appeared in: |
Journal of computational electronics |
| Paging: | Volume 6 () nr. 1-3 pages 23-26 |
| Year: |
2007-01-18 |
| Contents: | |
| Publisher: |
Kluwer Academic Publishers-Plenum Publishers, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 87 of 93 found articles
| << previous | next >> |