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                                       Details for article 62 of 93 found articles
 
 
  Physical modeling of electron mobility enhancement for arbitrarily strained silicon
 
 
Title: Physical modeling of electron mobility enhancement for arbitrarily strained silicon
Author: Ungersboeck, Enzo
Dhar, Siddhartha
Karlowatz, Gerhard
Kosina, Hans
Selberherr, Siegfried
Appeared in: Journal of computational electronics
Paging: Volume 6 () nr. 1-3 pages 55-58
Year: 2006-12-09
Contents:
Publisher: Kluwer Academic Publishers-Plenum Publishers, New York
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 62 of 93 found articles
 
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