| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparison of modeling approaches for current transport in polysilicon-channel nanowire and macaroni GAA MOSFETs
|
Mannara, Aurelio
|
|
|
20 |
1 |
p. 537-544
|
artikel
|
| 2 |
A complete set of logic gates with an identical single-stage structure based on periodic nature of single-electron devices
|
Sharifi, Mohammad Javad
|
|
|
20 |
1 |
p. 195-208
|
artikel
|
| 3 |
A design for an ultrafast all-optical full subtractor based on two-dimensional photonic crystals
|
Abhishek, J.
|
|
|
20 |
1 |
p. 433-441
|
artikel
|
| 4 |
A graphene-based dual-band THz absorber design exploiting the impedance-matching concept
|
Biabanifard, Sadegh
|
|
|
20 |
1 |
p. 38-48
|
artikel
|
| 5 |
An all-optical ultracompact microring-resonator-based optical switch
|
Chhipa, Mayur Kumar
|
|
|
20 |
1 |
p. 419-425
|
artikel
|
| 6 |
Analytical modeling to estimate the sensitivity of MEMS technology-based piezoresistive pressure sensor
|
Belwanshi, Vinod
|
|
|
20 |
1 |
p. 668-680
|
artikel
|
| 7 |
Analytical modelling of a Cyl-JLAM MOSFET in the subthreshold region using distinct device geometry
|
Misra, Sarita
|
|
|
20 |
1 |
p. 480-491
|
artikel
|
| 8 |
Analyzing the effect of dynamic properties of materials and operating medium on sensor parameters to increase the performance of diaphragm-based static/dynamic pressure sensors
|
Tabaru, Timuçin Emre
|
|
|
20 |
1 |
p. 643-657
|
artikel
|
| 9 |
A new method for reversible circuit synthesis using a Simulated Annealing algorithm and don’t-cares
|
Shahidi, Seyed Mansour
|
|
|
20 |
1 |
p. 718-734
|
artikel
|
| 10 |
An exploration of the optoelectronic nature of 4,4-difluoro-8-(C4H3X)-4-bora-3a,4a-diaza-s-indacene (X = O, S, Se) (BODIPY) systems
|
Irfan, Ahmad
|
|
|
20 |
1 |
p. 368-376
|
artikel
|
| 11 |
A novel H-plane loaded on a double-staggered grating waveguide slow-wave structure for W-band traveling-wave tubes
|
Babaeihaselghobi, Akbar
|
|
|
20 |
1 |
p. 575-581
|
artikel
|
| 12 |
A split-gate trench IGBT with low Miller capacitance and dV/dt noise
|
He, Yitao
|
|
|
20 |
1 |
p. 568-574
|
artikel
|
| 13 |
A technique to enhance the bandwidth in terahertz reflectarrays
|
Razmjoo, H.
|
|
|
20 |
1 |
p. 593-603
|
artikel
|
| 14 |
A TiO2 S/D n-channel FD-SOI MOSFET-based zero capacitor random access memory device
|
Chatterjee, Dibyendu
|
|
|
20 |
1 |
p. 527-536
|
artikel
|
| 15 |
A tunable ultra-wideband metamaterial absorber based on graphene
|
Wang, Liansheng
|
|
|
20 |
1 |
p. 107-115
|
artikel
|
| 16 |
BSIM3 model parameter extraction and performance analysis of a strained p-MOSFET for digital applications
|
Ranjbar Maleki, Soheil
|
|
|
20 |
1 |
p. 515-526
|
artikel
|
| 17 |
Characteristic analysis of a capacitive pressure-sensitive structure with linkage film
|
Chuai, Rongyan
|
|
|
20 |
1 |
p. 658-667
|
artikel
|
| 18 |
Comparison of transport of edge states in 2D hexagonal lattice metallic, semiconducting and topological insulator nanoribbons
|
Ahmed Masum, Tanvir
|
|
|
20 |
1 |
p. 116-125
|
artikel
|
| 19 |
Computational study of a B36 borophene as an electronic sensor for the anti-cancer drug cisplatinum
|
Vessally, Esmail
|
|
|
20 |
1 |
p. 635-642
|
artikel
|
| 20 |
Design analysis and applications of all-optical multifunctional logic using a semiconductor optical amplifier-based polarization rotation switch
|
Raja, A.
|
|
|
20 |
1 |
p. 387-396
|
artikel
|
| 21 |
Design and implementation of miniaturized wideband microstrip patch antenna for high-speed terahertz applications
|
Shamim, S. M.
|
|
|
20 |
1 |
p. 604-610
|
artikel
|
| 22 |
Design and implementation of reversible logic gates using silicene-based p–n junction logic devices
|
Bhatia, Inderdeep Singh
|
|
|
20 |
1 |
p. 735-744
|
artikel
|
| 23 |
Design strategy and simulation of single-gate SET for novel SETMOS hybridization
|
Shah, Raj
|
|
|
20 |
1 |
p. 218-229
|
artikel
|
| 24 |
Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts
|
Kumar, Dinesh
|
|
|
20 |
1 |
p. 324-329
|
artikel
|
| 25 |
DFT calculations on ZnO1−x compounds for optoelectronic applications
|
Ouerghui, W.
|
|
|
20 |
1 |
p. 467-479
|
artikel
|
| 26 |
Differential evolution with dynamic control factors for parameter estimation of photovoltaic models
|
Parida, Shubhranshu Mohan
|
|
|
20 |
1 |
p. 330-343
|
artikel
|
| 27 |
Doping-induced ferromagnetism in InSe and SnO monolayers
|
Houssa, M.
|
|
|
20 |
1 |
p. 88-94
|
artikel
|
| 28 |
Drain-engineered vertically stacked junctionless FET exhibiting complementary operation
|
Ehteshamuddin, M.
|
|
|
20 |
1 |
p. 545-555
|
artikel
|
| 29 |
Dual-band terahertz absorber based on graphene periodic arrays of disks and ribbons: circuit model approach
|
Aghaee, Toktam
|
|
|
20 |
1 |
p. 611-625
|
artikel
|
| 30 |
Electrical and electrothermal properties of few-layer 2D devices
|
Majee, Arnab K.
|
|
|
20 |
1 |
p. 2-12
|
artikel
|
| 31 |
FBG performance enhancement for sensing and EDFA gain flattening applications
|
Bebawi, John A.
|
|
|
20 |
1 |
p. 745-757
|
artikel
|
| 32 |
First-principles calculations of the electronic and optical properties of WSe2/Cd0.9Zn0.1Te van der Waals heterostructure
|
Chauhan, Anurag
|
|
|
20 |
1 |
p. 13-20
|
artikel
|
| 33 |
Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications
|
Singh, Preeti
|
|
|
20 |
1 |
p. 556-567
|
artikel
|
| 34 |
Graphene cantilever-based digital logic gates
|
Mudimela, Prasantha R.
|
|
|
20 |
1 |
p. 81-87
|
artikel
|
| 35 |
Impacts of core gate thickness and Ge content variation on the performance of Si1−xGex source/drain Si–nanotube JLFET
|
Thakur, Anchal
|
|
|
20 |
1 |
p. 237-247
|
artikel
|
| 36 |
Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal dichalcogenides
|
Gaddemane, Gautam
|
|
|
20 |
1 |
p. 49-59
|
artikel
|
| 37 |
Maximum theoretical electron mobility in n-type Ge1−xSnx due to minimum doping requirement set by intrinsic carrier density
|
Mukhopadhyay, Shyamal
|
|
|
20 |
1 |
p. 274-279
|
artikel
|
| 38 |
Memristive biophysical neuron models forming an excitatory–inhibitory neural network for modeling PING rhythm generation
|
Getachew, Melaku Nigus
|
|
|
20 |
1 |
p. 681-708
|
artikel
|
| 39 |
Mixed CNT bundles as VLSI interconnects for nanoscale technology nodes
|
Dhillon, Gurleen
|
|
|
20 |
1 |
p. 248-258
|
artikel
|
| 40 |
Modeling and simulation of high-efficiency GaAs PIN solar cells
|
Imran, Ali
|
|
|
20 |
1 |
p. 310-316
|
artikel
|
| 41 |
Modeling of a compressively strained quantum well laser based on InxGa1−xSb/GaSb and emitting at 2 μm
|
Dehimi, S.
|
|
|
20 |
1 |
p. 426-432
|
artikel
|
| 42 |
Modelling and simulation of carrier transport in quantum dot memory device for longer data retention and minimized power consumption
|
Damodaran, V.
|
|
|
20 |
1 |
p. 178-194
|
artikel
|
| 43 |
Modified charge carrier density for organic semiconductors modeled by an exponential density of states
|
Hart, Kevin
|
|
|
20 |
1 |
p. 259-266
|
artikel
|
| 44 |
Modified stem cells algorithm with enhanced strategy applied to engineering inverse problems in electromagnetics
|
Taherdangkoo, Mohammad
|
|
|
20 |
1 |
p. 582-592
|
artikel
|
| 45 |
Monolayer transition-metal dichalcogenides with polyethyleneimine adsorption
|
Dien, Vo Khuong
|
|
|
20 |
1 |
p. 135-150
|
artikel
|
| 46 |
Monte Carlo analysis of phosphorene nanotransistors
|
Gaddemane, Gautam
|
|
|
20 |
1 |
p. 60-69
|
artikel
|
| 47 |
New RTDs with enhanced operation based on black phosphorus–graphene heterostructures and a semianalytical vdW tunneling model
|
Khoshbaten, Mahdi
|
|
|
20 |
1 |
p. 70-80
|
artikel
|
| 48 |
Numerically efficient density-matrix technique for modeling electronic transport in mid-infrared quantum cascade lasers
|
Soleimanikahnoj, S.
|
|
|
20 |
1 |
p. 280-309
|
artikel
|
| 49 |
On reliable modeling of substrate/buffer loading effects in a gallium nitride high-electron-mobility transistor on silicon substrate
|
Jarndal, Anwar
|
|
|
20 |
1 |
p. 503-514
|
artikel
|
| 50 |
Performance analysis of MCB-based VLSI interconnects depending on scattering induced by substrate surface roughness
|
Sharma, Manvi
|
|
|
20 |
1 |
p. 709-717
|
artikel
|
| 51 |
Performance enhancement of junctionless silicon nanotube FETs using gate and dielectric engineering
|
Scarlet, S. Priscilla
|
|
|
20 |
1 |
p. 209-217
|
artikel
|
| 52 |
Plasmonic all-optical metal–insulator–metal switches based on silver nano-rods, comprehensive theoretical analysis and design guidelines
|
Khani, Shiva
|
|
|
20 |
1 |
p. 442-457
|
artikel
|
| 53 |
Proposal for ultrafast all-optical pseudo random binary sequence generator using microring resonator-based switches
|
Rakshit, Jayanta K.
|
|
|
20 |
1 |
p. 353-367
|
artikel
|
| 54 |
Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode at 300 K
|
Gardner, Carl L.
|
|
|
20 |
1 |
p. 230-236
|
artikel
|
| 55 |
Quantum transport simulation of graphene-nanoribbon field-effect transistors with defects
|
Chen, Shanmeng
|
|
|
20 |
1 |
p. 21-37
|
artikel
|
| 56 |
Retraction Note to: An analytical model for the effects of the variation of ferroelectric material parameters on the minimum subthreshold swing of NC-FETs
|
Rasool, Raheela
|
|
|
20 |
1 |
p. 758
|
artikel
|
| 57 |
Simulation of two-transistor parallel and series circuits for gas sensing validated by experimental data
|
Wondmagegn, W.
|
|
|
20 |
1 |
p. 626-634
|
artikel
|
| 58 |
Special issue on two-dimensional materials
|
Vandenberghe, William
|
|
|
20 |
1 |
p. 1
|
artikel
|
| 59 |
Spin-polarization and spin-flip through a monolayer MoS2 superlattice via the Rashba effect
|
Tavakoli, Farhad
|
|
|
20 |
1 |
p. 126-134
|
artikel
|
| 60 |
Square structured photonic crystal fiber based THz sensor design for human body protein detection
|
Islam, Md. Aminul
|
|
|
20 |
1 |
p. 377-386
|
artikel
|
| 61 |
Terahertz rectangular waveguides with inserted graphene films biased by light and their quasi-linear electromagnetic modeling
|
Kouzaev, Guennadi A.
|
|
|
20 |
1 |
p. 169-177
|
artikel
|
| 62 |
The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges
|
Suddapalli, Subba Rao
|
|
|
20 |
1 |
p. 492-502
|
artikel
|
| 63 |
The design of a reconfigurable all-optical logic device based on cross-phase modulation in a highly nonlinear fiber
|
Lovkesh,
|
|
|
20 |
1 |
p. 397-408
|
artikel
|
| 64 |
The effect of edge functionalization on the device performance of monolayer Si0.5Ge0.5 nanoribbon transistors
|
Zhao, Jianwei
|
|
|
20 |
1 |
p. 95-106
|
artikel
|
| 65 |
The effect of the stacking arrangement on the device behavior of bilayer MoS2 FETs
|
Mukhopadhyay, Arnab
|
|
|
20 |
1 |
p. 161-168
|
artikel
|
| 66 |
The effects of mutual coupling and polarization on the performance of steered-beam adaptive arrays
|
Al Ka’bi, Amin H.
|
|
|
20 |
1 |
p. 458-466
|
artikel
|
| 67 |
The impact of spin–orbit coupling and the strain effect on monolayer tin carbide
|
Islam, Md. Rasidul
|
|
|
20 |
1 |
p. 151-160
|
artikel
|
| 68 |
Theoretical investigation of the electronic structure and anisotropic optical properties of quasi-1D Sb2Se3 photovoltaic absorber materials
|
Peng, Xuebing
|
|
|
20 |
1 |
p. 317-323
|
artikel
|
| 69 |
The simulated performance of c-Si/a-Si:H heterojunction solar cells with nc-Si:H, µc-Si:H, a-SiC:H, and a-SiGe:H emitter layers
|
Kanneboina, Venkanna
|
|
|
20 |
1 |
p. 344-352
|
artikel
|
| 70 |
Ultracompact all-optical full adders using an interference effect based on 2D photonic crystal nanoring resonators
|
Mohammadi, Masoud
|
|
|
20 |
1 |
p. 409-418
|
artikel
|
| 71 |
Wavepacket phase-space quantum Monte Carlo method
|
Welland, Ian
|
|
|
20 |
1 |
p. 267-273
|
artikel
|
Tijdschrift beschrijving