| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio prediction of the structural, electronic and optical behavior of novel combinations of ternary perovskite oxides ATiO3 (A = Rb, Cs, Fr) using the Hubbard ‘U’ correction for optoelectronic devices
|
Hussain, Muhammad Iqbal
|
|
|
19 |
4 |
p. 1380-1388
|
artikel
|
| 2 |
Adsorption and optical properties of H2S, CH4, NO, and SO2 gas molecules on arsenene: a DFT study
|
Abooali, Arshiya
|
|
|
19 |
4 |
p. 1373-1379
|
artikel
|
| 3 |
Analysis of asymmetrical scattering by a PEC cylinder coated with a ferrite layer
|
Bahrami, Zahra
|
|
|
19 |
4 |
p. 1597-1605
|
artikel
|
| 4 |
Analysis of gate-induced drain leakage in gate-all-around nanowire transistors
|
Sun, Yabin
|
|
|
19 |
4 |
p. 1463-1470
|
artikel
|
| 5 |
Analysis of top- and side-contact MLGNR interconnects: impact on crosstalk, stability, and electromigration
|
Kumbhare, Vijay Rao
|
|
|
19 |
4 |
p. 1588-1596
|
artikel
|
| 6 |
A survey of the state-of-the-art swarm intelligence techniques and their application to an inverse design problem
|
Khan, Talha Ali
|
|
|
19 |
4 |
p. 1606-1628
|
artikel
|
| 7 |
Design and performance optimization of thin film tin monoxide (SnO)/silicon electron–hole bilayer tunnel field-effect transistor
|
Ahangari, Zahra
|
|
|
19 |
4 |
p. 1485-1493
|
artikel
|
| 8 |
Designing the parameters of an FSS antenna for communication systems using an enhanced UTC-PSO approach
|
Rao, K. Nishanth
|
|
|
19 |
4 |
p. 1579-1587
|
artikel
|
| 9 |
Effects of adding cyanovinyl moiety on the photovoltaic DSSCs phosphonic acid based cells
|
Fadili, Driss
|
|
|
19 |
4 |
p. 1629-1644
|
artikel
|
| 10 |
Effects of random number and location of the nanosized metal grains on the threshold voltage variability of silicon gate-all-around nanowire n-type metal-oxide-semiconductor field-effect transistors
|
Sung, Wen-Li
|
|
|
19 |
4 |
p. 1478-1484
|
artikel
|
| 11 |
Efficient detection of transistor stuck-on faults in CMOS circuits using low-overhead single-ended ring oscillators
|
Huq, S. M. Ishraqul
|
|
|
19 |
4 |
p. 1685-1694
|
artikel
|
| 12 |
Error analyses of the two-equations two-unknowns method for low-frequency FDTD problems
|
Saydam, Talha
|
|
|
19 |
4 |
p. 1573-1578
|
artikel
|
| 13 |
Evolution of amplified spontaneous emission and characterization of an optimized two-mode EDFA system obtained from an extended analytical model
|
Qayoom, Taban
|
|
|
19 |
4 |
p. 1660-1669
|
artikel
|
| 14 |
Formulation of a phase space exponential operator for the Wigner transport equation accounting for the spatial variation of the effective mass
|
Schulz, Lukas
|
|
|
19 |
4 |
p. 1399-1415
|
artikel
|
| 15 |
Frequency dependence of dielectrophoretic fabrication of single-walled carbon nanotube field-effect transistors
|
Sadabad, Yousef Adeli
|
|
|
19 |
4 |
p. 1516-1526
|
artikel
|
| 16 |
High-permittivity dielectric edge termination for vertical high voltage devices
|
Lee, Hyun-Soo
|
|
|
19 |
4 |
p. 1538-1545
|
artikel
|
| 17 |
Improving the performance of graphene nanoribbon field-effect transistors by using lanthanum aluminate as the gate dielectric
|
Radsar, Tahereh
|
|
|
19 |
4 |
p. 1507-1515
|
artikel
|
| 18 |
Iterative approach investigation on the fractal Hilbert curve low-pass filters: analysis and measurements
|
Berhab, Souad
|
|
|
19 |
4 |
p. 1695-1704
|
artikel
|
| 19 |
Modeling and simulation of a dual-material asymmetric heterodielectric-gate TFET
|
Vivek Anand, I.
|
|
|
19 |
4 |
p. 1450-1462
|
artikel
|
| 20 |
Modeling of a dual circularly polarized capacitive-coupled slit-loaded truncated microstrip antenna
|
Singh, Dinesh Kumar
|
|
|
19 |
4 |
p. 1564-1572
|
artikel
|
| 21 |
Modeling of a superconducting sensor with microring-embedded gold-island space–time control
|
Bunruangses, M.
|
|
|
19 |
4 |
p. 1678-1684
|
artikel
|
| 22 |
Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green’s function implementations
|
Lemus, Daniel A.
|
|
|
19 |
4 |
p. 1389-1398
|
artikel
|
| 23 |
Prediction of the structural, electronic, and piezoelectric properties of narrow-bandgap compounds FeVX (X = P, As, Sb)
|
Harzellaoui, A.
|
|
|
19 |
4 |
p. 1365-1372
|
artikel
|
| 24 |
Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications
|
Liu, Yong
|
|
|
19 |
4 |
p. 1527-1537
|
artikel
|
| 25 |
Single-electron pumping in common-gate triple-dot devices with arbitrary asymmetric gate capacitance distributions
|
Imai, Shigeru
|
|
|
19 |
4 |
p. 1494-1506
|
artikel
|
| 26 |
Spectra of PT-symmetric fractional Schrödinger equations with multiple quantum wells
|
Solaimani, M.
|
|
|
19 |
4 |
p. 1416-1425
|
artikel
|
| 27 |
Strain-induced energetic and electronic properties of stanene nanomeshes
|
Wu, Liyuan
|
|
|
19 |
4 |
p. 1357-1364
|
artikel
|
| 28 |
Studying the switching variability in redox-based resistive switching devices
|
Abbaspour, Elhameh
|
|
|
19 |
4 |
p. 1426-1432
|
artikel
|
| 29 |
Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction
|
Shaw, Namrata
|
|
|
19 |
4 |
p. 1433-1443
|
artikel
|
| 30 |
TCAD modeling of neuromorphic systems based on ferroelectric tunnel junctions
|
He, Yu
|
|
|
19 |
4 |
p. 1444-1449
|
artikel
|
| 31 |
The application of a modified Levine model to quantum-well infrared photodetectors in the low-temperature regime
|
Bezerra, Anibal Thiago
|
|
|
19 |
4 |
p. 1645-1650
|
artikel
|
| 32 |
The design and analysis of a CMOS-compatible silicon photonic ON–OFF switch based on a mode-coupling mechanism
|
Meerasha, Mubarak Ali
|
|
|
19 |
4 |
p. 1651-1659
|
artikel
|
| 33 |
The effect of the electric field on the output performance of triboelectric nanogenerators
|
Yi, Hong
|
|
|
19 |
4 |
p. 1670-1677
|
artikel
|
| 34 |
The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs
|
Zagni, Nicolò
|
|
|
19 |
4 |
p. 1555-1563
|
artikel
|
| 35 |
Validation and parameter extraction of a compact equivalent circuit model for an RF CMOS transistor
|
Uqaili, Junaid Ahmed
|
|
|
19 |
4 |
p. 1471-1477
|
artikel
|
| 36 |
Variable thermal resistance model of GaN-on-SiC with substrate scalability
|
Arivazhagan, L.
|
|
|
19 |
4 |
p. 1546-1554
|
artikel
|
Tijdschrift beschrijving