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Details for article 29 of 36 found articles
| Title: |
Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction |
| Author: |
Shaw, Namrata Mukhopadhyay, Bratati Sen, Gopa |
| Appeared in: |
Journal of computational electronics |
| Paging: | Volume 19 () nr. 4 pages 1433-1443 |
| Year: |
2020-06-30 |
| Contents: | |
| Publisher: |
Springer US, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 29 of 36 found articles
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