| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A fast method for process reliability analysis of CNFET-based digital integrated circuits
|
Saeedi, Fereshteh
|
|
2018
|
17 |
2 |
p. 571-579
|
artikel
|
| 2 |
Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with $${N}^{+}{-}{P}^{-}$$N+-P- junction
|
Ramezani, Zeinab
|
|
2018
|
17 |
2 |
p. 670-681
|
artikel
|
| 3 |
Analytical predictions for nonlinear optical processes in silicon slot waveguides
|
Priye, Vishnu
|
|
2018
|
17 |
2 |
p. 857-865
|
artikel
|
| 4 |
An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs
|
Khan, M. N.
|
|
2018
|
17 |
2 |
p. 653-662
|
artikel
|
| 5 |
A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injector
|
Chen, Wensuo
|
|
2018
|
17 |
2 |
p. 707-712
|
artikel
|
| 6 |
A novel three-input approximate XOR gate design based on quantum-dot cellular automata
|
Maroufi, Negin
|
|
2018
|
17 |
2 |
p. 866-879
|
artikel
|
| 7 |
Application of the generalized logistic functions in modeling inversion charge density of MOSFET
|
Kevkić, Tijana
|
|
2018
|
17 |
2 |
p. 689-697
|
artikel
|
| 8 |
Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studies
|
Vadizadeh, Mahdi
|
|
2018
|
17 |
2 |
p. 745-755
|
artikel
|
| 9 |
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
|
Abdelmalek, Nidhal
|
|
2018
|
17 |
2 |
p. 724-735
|
artikel
|
| 10 |
Correction to: From materials to systems: a multiscale analysis of nanomagnetic switching
|
Xie, Yunkun
|
|
2018
|
17 |
2 |
p. 880
|
artikel
|
| 11 |
Design and performance analysis of all-optical cascaded adder using SOA-based MZI
|
Ramachandran, Manohari
|
|
2018
|
17 |
2 |
p. 845-856
|
artikel
|
| 12 |
Design and structural optimization of junctionless FinFET with Gaussian-doped channel
|
Kaundal, Shalu
|
|
2018
|
17 |
2 |
p. 637-645
|
artikel
|
| 13 |
Design of a high bitrate optical decoder based on photonic crystals
|
Parandin, Fariborz
|
|
2018
|
17 |
2 |
p. 830-836
|
artikel
|
| 14 |
Design of an optical half-adder using cohesive twin-structured PCRR
|
Janani, K
|
|
2018
|
17 |
2 |
p. 837-844
|
artikel
|
| 15 |
Effects of impurity and cross-sectional shape on entropy of quantum wires
|
Khordad, R.
|
|
2018
|
17 |
2 |
p. 551-561
|
artikel
|
| 16 |
Electronic signature of single-molecular device based on polyacetylene derivative
|
Oliveira, Alexandre de S.
|
|
2018
|
17 |
2 |
p. 586-594
|
artikel
|
| 17 |
Estimating various losses in c-Si solar cells subjected to partial shading: insights into J–V performance reduction
|
Purohit, Zeel
|
|
2018
|
17 |
2 |
p. 810-820
|
artikel
|
| 18 |
Exact analytical solution to the electron density for monolayer and bilayer graphene
|
Selvaggi, Jerry P.
|
|
2018
|
17 |
2 |
p. 491-498
|
artikel
|
| 19 |
Fast, energy-efficient electronic structure simulations for multi-million atomic systems with GPU devices
|
Ryu, Hoon
|
|
2018
|
17 |
2 |
p. 698-706
|
artikel
|
| 20 |
FDTD algorithm to achieve absolute stability in performance analysis of SWCNT interconnects
|
Venkataiah, C.
|
|
2018
|
17 |
2 |
p. 540-550
|
artikel
|
| 21 |
First-principles study of electron transport in azulene molecular junction: effect of electrode material on electrical rectification behavior
|
Kala, C. Preferencial
|
|
2018
|
17 |
2 |
p. 580-585
|
artikel
|
| 22 |
GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function
|
Mehedi, Ibrahim Mustafa
|
|
2018
|
17 |
2 |
p. 663-669
|
artikel
|
| 23 |
Graphene nanoribbon photodetectors based on an asymmetric potential barrier: a new concept and a new structure
|
Zarei, Mohammad H.
|
|
2018
|
17 |
2 |
p. 531-539
|
artikel
|
| 24 |
Impact of asymmetric dual-k spacers on tunnel field effect transistors
|
Raushan, Mohd Adil
|
|
2018
|
17 |
2 |
p. 756-765
|
artikel
|
| 25 |
Improvement in electrostatic characteristics of doped TFETs by hole layer formation
|
Soni, Deepak
|
|
2018
|
17 |
2 |
p. 736-744
|
artikel
|
| 26 |
Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations
|
Lei, Jianmei
|
|
2018
|
17 |
2 |
p. 646-652
|
artikel
|
| 27 |
Modeling and simulation of a graphene-based three-terminal junction rectifier
|
Garg, Ankur
|
|
2018
|
17 |
2 |
p. 562-570
|
artikel
|
| 28 |
Numerical analysis of a polysilicon-based resistive memory device
|
Berco, Dan
|
|
2018
|
17 |
2 |
p. 766-773
|
artikel
|
| 29 |
On the accuracy of reduced-order integrated circuit simulators for computing the heat production on electronic components
|
Abali, B. Emek
|
|
2018
|
17 |
2 |
p. 625-636
|
artikel
|
| 30 |
On the electronic and transport properties of semiconducting carbon nanotubes: the role of $$\hbox {sp}^3$$sp3-defects
|
Teich, D.
|
|
2018
|
17 |
2 |
p. 521-530
|
artikel
|
| 31 |
On the optoelectronic properties of non-covalently functionalized graphene for solar cell application
|
Chouk, Rihab
|
|
2018
|
17 |
2 |
p. 791-809
|
artikel
|
| 32 |
Photovoltaic module parameter estimation using an analytical approach and least squares method
|
Maouhoub, Noureddine
|
|
2018
|
17 |
2 |
p. 784-790
|
artikel
|
| 33 |
Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage region
|
Patel, Pramod Kumar
|
|
2018
|
17 |
2 |
p. 774-783
|
artikel
|
| 34 |
Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)
|
Khadir, A.
|
|
2018
|
17 |
2 |
p. 682-688
|
artikel
|
| 35 |
Spin-dependent transport in a multifunctional spintronic device with graphene nanoribbon electrodes
|
Han, Xiaoxiao
|
|
2018
|
17 |
2 |
p. 604-612
|
artikel
|
| 36 |
Strain engineering of band dispersion and dielectric response of monolayer and bilayer AlN
|
Behzad, Somayeh
|
|
2018
|
17 |
2 |
p. 514-520
|
artikel
|
| 37 |
Synthesis, computational study and characterization of a 3-{[2,3-diphenylquinoxalin-6-yl]diazenyl}-4-hydroxy-2H-chromen-2- one azo dye for dye-sensitized solar cell applications
|
Toor, Ramshah Ahmad
|
|
2018
|
17 |
2 |
p. 821-829
|
artikel
|
| 38 |
The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics
|
Karimi, Fa.
|
|
2018
|
17 |
2 |
p. 613-624
|
artikel
|
| 39 |
Time evolution of current density in conducting single-walled carbon nanotubes
|
Majid, M. J.
|
|
2018
|
17 |
2 |
p. 595-603
|
artikel
|
| 40 |
Tuning electronic, magnetic, and transport properties of blue phosphorene by substitutional doping: a first-principles study
|
Safari, Fatemeh
|
|
2018
|
17 |
2 |
p. 499-513
|
artikel
|
| 41 |
Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)
|
Ajay,
|
|
2018
|
17 |
2 |
p. 713-723
|
artikel
|
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