| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accuracy improvement with reliable statistical-based models for CNT-FET applications
|
Pivezhandi, Mohammad
|
|
2017
|
16 |
3 |
p. 610-619
|
artikel
|
| 2 |
A compact analytical model of binary metal alloy silicon-on-nothing (BMASON) tunnel FET with interface trapped charges
|
Sarkhel, Saheli
|
|
2017
|
16 |
3 |
p. 704-713
|
artikel
|
| 3 |
A computational study of the optoelectronic and thermoelectric properties of HfIrX (X = As, Sb and Bi) in the cubic LiAlSi-type structure
|
Chibani, S.
|
|
2017
|
16 |
3 |
p. 765-775
|
artikel
|
| 4 |
A 3D model of new composite ultrasonic transducer
|
Jovanović, Igor
|
|
2017
|
16 |
3 |
p. 977-986
|
artikel
|
| 5 |
Analysis of polarized light generation in anisotropic strained quantum dots
|
Negi, C. M. S.
|
|
2017
|
16 |
3 |
p. 805-813
|
artikel
|
| 6 |
Analytical investigation on the electrooptical properties of graphene nanoscrolls for SPR-based sensor application
|
Rahmani, Meisam
|
|
2017
|
16 |
3 |
p. 787-795
|
artikel
|
| 7 |
Analytical modeling and sensitivity analysis of dielectric-modulated junctionless gate stack surrounding gate MOSFET (JLGSSRG) for application as biosensor
|
Chakraborty, Avik
|
|
2017
|
16 |
3 |
p. 556-567
|
artikel
|
| 8 |
An efficient study of circular microstrip antenna on suspended and composite substrates
|
Bedra, Sami
|
|
2017
|
16 |
3 |
p. 922-929
|
artikel
|
| 9 |
An improved model for the $${I{-}V}$$I-V characteristics of submicron SiC MESFETs by evaluating the potential distribution inside the channel
|
Ahmed, M. M.
|
|
2017
|
16 |
3 |
p. 514-525
|
artikel
|
| 10 |
A novel electrostatically doped ferroelectric Schottky barrier tunnel FET: process resilient design
|
Singh, Sangeeta
|
|
2017
|
16 |
3 |
p. 685-695
|
artikel
|
| 11 |
A novel low power Exclusive-OR via cell level-based design function in quantum cellular automata
|
Berarzadeh, Mohammad
|
|
2017
|
16 |
3 |
p. 875-882
|
artikel
|
| 12 |
A novel recessed gate MESFET by embedded dielectric packet
|
Roustaie, Zohreh
|
|
2017
|
16 |
3 |
p. 640-647
|
artikel
|
| 13 |
Array pattern optimization for a steerable circular isotropic antenna array using the firefly algorithm
|
Banerjee, Sudipta
|
|
2017
|
16 |
3 |
p. 952-976
|
artikel
|
| 14 |
Artificial neural network design for compact modeling of generic transistors
|
Zhang, Lining
|
|
2017
|
16 |
3 |
p. 825-832
|
artikel
|
| 15 |
A systematic method for simulating total ionizing dose effects using the finite elements method
|
Chatzikyriakou, Eleni
|
|
2017
|
16 |
3 |
p. 548-555
|
artikel
|
| 16 |
A technique to incorporate both tensile and compressive channel stress in Ge FinFET architecture
|
Sinha, Kunal
|
|
2017
|
16 |
3 |
p. 620-630
|
artikel
|
| 17 |
Atomistic modeling of nonpolar m-plane InGaN disk-in-wire light emitters
|
Nishat, Md Rezaul Karim
|
|
2017
|
16 |
3 |
p. 814-824
|
artikel
|
| 18 |
Atomistic tight-binding theory in 2D colloidal CdSe zinc-blende nanoplatelets
|
Sukkabot, Worasak
|
|
2017
|
16 |
3 |
p. 796-804
|
artikel
|
| 19 |
Bandgap-dependent onset behavior of output characteristics in line-tunneling field-effect transistors
|
Shih, Chun-Hsing
|
|
2017
|
16 |
3 |
p. 696-703
|
artikel
|
| 20 |
Compact 2D threshold voltage modeling and performance analysis of ternary metal alloy work-function-engineered double-gate MOSFET
|
Saha, Priyanka
|
|
2017
|
16 |
3 |
p. 648-657
|
artikel
|
| 21 |
Compact H-plane dual-band bandstop waveguide filter
|
Mrvić, Marija V.
|
|
2017
|
16 |
3 |
p. 939-951
|
artikel
|
| 22 |
Computational analysis of temperature effects on solar cell efficiency
|
Hossain, Mohammad I.
|
|
2017
|
16 |
3 |
p. 776-786
|
artikel
|
| 23 |
Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high $$\kappa $$κ dielectric material in electrically doped TFET: proposal and optimization
|
Yadav, Shivendra
|
|
2017
|
16 |
3 |
p. 721-731
|
artikel
|
| 24 |
2-D analytical modeling for electrostatic potential and threshold voltage of a dual work function gate Schottky barrier MOSFET
|
Kumar, Prashanth
|
|
2017
|
16 |
3 |
p. 658-665
|
artikel
|
| 25 |
3-D analytical modeling of high-k gate stack dual-material tri-gate strained silicon-on-nothing MOSFET with dual-material bottom gate for suppressing short channel effects
|
Banerjee, Pritha
|
|
2017
|
16 |
3 |
p. 631-639
|
artikel
|
| 26 |
Design and simulation of a reversible ALU by using QCA cells with the aim of improving evaluation parameters
|
Naghibzadeh, Armin
|
|
2017
|
16 |
3 |
p. 883-895
|
artikel
|
| 27 |
Design and simulation of high breakdown voltage AlGaN/GaN HEMTs with a charged passivation layer for microwave power applications
|
Du, Jiangfeng
|
|
2017
|
16 |
3 |
p. 741-747
|
artikel
|
| 28 |
Design of a wide-angle, polarization-insensitive, dual-band metamaterial-inspired absorber with the aid of equivalent circuit model
|
Bagci, Fulya
|
|
2017
|
16 |
3 |
p. 913-921
|
artikel
|
| 29 |
Design of high performance normally-off dual junction gate AlGaN/GaN heterostructure field effect transistors for high voltage application
|
Bai, Zhiyuan
|
|
2017
|
16 |
3 |
p. 748-755
|
artikel
|
| 30 |
Electronic structure, optical and thermoelectric properties of half-Heusler ZrIrX(X $$=$$= As, Sb, Bi): a first principles study
|
Wei, Junhong
|
|
2017
|
16 |
3 |
p. 535-541
|
artikel
|
| 31 |
Electron transport through 8-oxoG: NEGF/DFT study
|
Wilson, Luke S. J.
|
|
2017
|
16 |
3 |
p. 497-502
|
artikel
|
| 32 |
$$\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}/\hbox {InAs}/\hbox {In}_{0.7}\hbox {Ga}_{0.3}\hbox {As}$$In0.7Ga0.3As/InAs/In0.7Ga0.3As composite-channel double-gate (DG)-HEMT devices for high-frequency applications
|
Saravana Kumar, R.
|
|
2017
|
16 |
3 |
p. 732-740
|
artikel
|
| 33 |
Influence of oblique magnetic field on the impact ionization rate of charge carriers in semiconductors
|
Mukherjee, Prajukta
|
|
2017
|
16 |
3 |
p. 503-513
|
artikel
|
| 34 |
Integrating sleep and pass transistor logic for leakage power reduction in FinFET circuits
|
Dadoria, Ajay Kumar
|
|
2017
|
16 |
3 |
p. 867-874
|
artikel
|
| 35 |
Introduction of a metal strip in oxide region of junctionless tunnel field-effect transistor to improve DC and RF performance
|
Tirkey, Sukeshni
|
|
2017
|
16 |
3 |
p. 714-720
|
artikel
|
| 36 |
Inversion of rectification characteristics modulated by ribbon widths in armchair graphene/h-BN nano-ribbon hetero-junctions with different interface types
|
Wang, Lihua
|
|
2017
|
16 |
3 |
p. 601-609
|
artikel
|
| 37 |
Investigation of electronic structure and half-metallic ferromagnetic behavior with large half-metallic gap in $$\hbox {Sr}_{1-x}\hbox {V}_{x}\hbox {O}$$Sr1-xVxO
|
Berber, Mohamed
|
|
2017
|
16 |
3 |
p. 542-547
|
artikel
|
| 38 |
Investigation of the influence of double-sided diaphragm on performance of capacitance and sensitivity of touch mode capacitive pressure sensor: numerical modeling and simulation forecasting
|
Varma, M. Aditya
|
|
2017
|
16 |
3 |
p. 987-994
|
artikel
|
| 39 |
Lattice dynamics and thermodynamic properties of alkaline-earth metal carbides XC ($$\hbox {X}=\hbox {Ca}$$X=Ca, Sr and Ba) in the rocksalt structure: a first-principles study
|
Mazouz, Hadj Moulay Ahmed
|
|
2017
|
16 |
3 |
p. 526-534
|
artikel
|
| 40 |
Manipulation of structural and optical properties in ZnO/ZnS type-II and ZnS/ZnO inverted type-II core/shell nanocrystals: tight-binding theory
|
Sukkabot, Worasak
|
|
2017
|
16 |
3 |
p. 756-764
|
artikel
|
| 41 |
Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET
|
Diabi, Abdelali
|
|
2017
|
16 |
3 |
p. 593-600
|
artikel
|
| 42 |
Modeling and simulation of carbon nanotube-based dual-gated enzyme field effect transistor for acetylcholine detection
|
Sharma, Purnima Kumari
|
|
2017
|
16 |
3 |
p. 584-592
|
artikel
|
| 43 |
Modelling and analysis of crosstalk induced noise effects in bundle SWCNT interconnects and its impact on signal stability
|
Bagheri, Amin
|
|
2017
|
16 |
3 |
p. 845-855
|
artikel
|
| 44 |
New technique to extend the vertical depletion region at SOI-LDMOSFETs
|
Mansoori, Hojjat Allah
|
|
2017
|
16 |
3 |
p. 666-675
|
artikel
|
| 45 |
Novel designs of a carry/borrow look-ahead adder/subtractor using reversible gates
|
Rahmati, Maryam
|
|
2017
|
16 |
3 |
p. 856-866
|
artikel
|
| 46 |
Numerical simulation of plasma waves in a quasi-2D electron gas based on the Boltzmann transport equation
|
Kargar, Zeinab
|
|
2017
|
16 |
3 |
p. 487-496
|
artikel
|
| 47 |
On fault-tolerant design of Exclusive-OR gates in QCA
|
Kumar, Dharmendra
|
|
2017
|
16 |
3 |
p. 896-906
|
artikel
|
| 48 |
Performance analysis of InAs- and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers
|
Pown, M.
|
|
2017
|
16 |
3 |
p. 676-684
|
artikel
|
| 49 |
Size effect in graphene nano-islands: A Monte Carlo study
|
Masrour, R.
|
|
2017
|
16 |
3 |
p. 576-583
|
artikel
|
| 50 |
Size miniaturization of microstrip antenna embedded with open-ended ground slots
|
Roy, Bappadittya
|
|
2017
|
16 |
3 |
p. 907-912
|
artikel
|
| 51 |
Synchronization and chaotic communication in nonlinear circuits with nonlinear coupling
|
Chithra, A.
|
|
2017
|
16 |
3 |
p. 833-844
|
artikel
|
| 52 |
Thermal optimization of IGBT modules based on finite element method and particle swarm optimization
|
Alavi, Omid
|
|
2017
|
16 |
3 |
p. 930-938
|
artikel
|
| 53 |
Tunable electronic properties of multilayer phosphorene and its nanoribbons
|
Soleimanikahnoj, S.
|
|
2017
|
16 |
3 |
p. 568-575
|
artikel
|
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