| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of co-tunneling effect in single-electronics simulation
|
Elabd, Ali A.
|
|
2016
|
15 |
4 |
p. 1351-1360
|
artikel
|
| 2 |
A new DVCC-based fully cascadable voltage-mode full-wave rectifier
|
Ibrahim, Muhammed A.
|
|
2016
|
15 |
4 |
p. 1440-1449
|
artikel
|
| 3 |
Asymmetric junctionless nanowire TFET with built-in $${n}^{+}$$n+ source pocket emphasizing on energy band modification
|
Rahimian, Morteza
|
|
2016
|
15 |
4 |
p. 1297-1307
|
artikel
|
| 4 |
Atomistic tight-binding computations in the new class of CdSe/AlP II–VI core/III–V shell nanocrystals
|
Sukkabot, Worasak
|
|
2016
|
15 |
4 |
p. 1248-1254
|
artikel
|
| 5 |
A two-dimensional (2D) analytical surface potential and subthreshold current model for the underlap dual-material double-gate (DMDG) FinFET
|
Narendar, Vadthiya
|
|
2016
|
15 |
4 |
p. 1316-1325
|
artikel
|
| 6 |
Basis adaptation for the stochastic nonlinear Poisson–Boltzmann equation
|
Khodadadian, Amirreza
|
|
2016
|
15 |
4 |
p. 1393-1406
|
artikel
|
| 7 |
Behavior of the dielectric function of monolayer $$\hbox {MoS}_{2}$$MoS2 under Uniaxial Strain
|
Nayeri, Maryam
|
|
2016
|
15 |
4 |
p. 1388-1392
|
artikel
|
| 8 |
Design and analysis of new fault-tolerant majority gate for quantum-dot cellular automata
|
Du, Huakun
|
|
2016
|
15 |
4 |
p. 1484-1497
|
artikel
|
| 9 |
Design and modeling of molecular logic circuits based on transistor structures
|
Safapour, S.
|
|
2016
|
15 |
4 |
p. 1416-1423
|
artikel
|
| 10 |
Design and simulation of a semispherical semiconductor to construct a beta-voltaic battery using c-Si and a-Si:H materials with different doping concentration
|
Sadeghi, H.
|
|
2016
|
15 |
4 |
p. 1577-1592
|
artikel
|
| 11 |
Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells
|
Guevara, Marco
|
|
2016
|
15 |
4 |
p. 1498-1504
|
artikel
|
| 12 |
Design of all-optical universal shift register using nonlinear microring resonators
|
Rakshit, Jayanta Kumar
|
|
2016
|
15 |
4 |
p. 1450-1461
|
artikel
|
| 13 |
Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer
|
Du, Jiangfeng
|
|
2016
|
15 |
4 |
p. 1334-1339
|
artikel
|
| 14 |
Efficient numerical procedure for the determination of the wave function-independent terms in longitudinal optical phonon scattering rates formulated in the Fourier domain
|
Lü, X.
|
|
2016
|
15 |
4 |
p. 1505-1510
|
artikel
|
| 15 |
Electronic properties of graphyne nanotubes filled with small fullerenes: a density functional theory study
|
Majidi, Roya
|
|
2016
|
15 |
4 |
p. 1263-1268
|
artikel
|
| 16 |
Electron–phonon dissipation in quantum nanodevices
|
Iotti, Rita Claudia
|
|
2016
|
15 |
4 |
p. 1170-1178
|
artikel
|
| 17 |
Extensive electrostatic investigation of workfunction-modulated SOI tunnel FETs
|
Panda, Subhrasmita
|
|
2016
|
15 |
4 |
p. 1326-1333
|
artikel
|
| 18 |
Fabrication parameters affecting implementation of waveguide bandpass filter with complementary split-ring resonators
|
Stefanovski Pajović, Snežana Lj.
|
|
2016
|
15 |
4 |
p. 1462-1472
|
artikel
|
| 19 |
First-principle calculations of electronic and ferromagnetic properties of $$\hbox {Al}_{1-x}\hbox {V}_{x}\hbox {Sb}$$Al1-xVxSb
|
Zerouali, Asmaa
|
|
2016
|
15 |
4 |
p. 1255-1262
|
artikel
|
| 20 |
Fully self-consistent analysis of III-nitride quantum cascade structures
|
Saha, Sumit
|
|
2016
|
15 |
4 |
p. 1531-1540
|
artikel
|
| 21 |
High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics
|
Hlali, Slah
|
|
2016
|
15 |
4 |
p. 1340-1350
|
artikel
|
| 22 |
H$${^{+}}$$+-ion-sensitive FET macromodel in LTSPICE IV
|
Abu Samah, Nur Liyana Mardhiah
|
|
2016
|
15 |
4 |
p. 1407-1415
|
artikel
|
| 23 |
Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
|
An, Jun-seop
|
|
2016
|
15 |
4 |
p. 1570-1576
|
artikel
|
| 24 |
Impact of inelastic phonon scattering in the OFF state of Tunnel-field-effect transistors
|
Pala, Marco G.
|
|
2016
|
15 |
4 |
p. 1240-1247
|
artikel
|
| 25 |
Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
|
Martinez, Antonio
|
|
2016
|
15 |
4 |
p. 1130-1147
|
artikel
|
| 26 |
Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs
|
Djamil, Rechem
|
|
2016
|
15 |
4 |
p. 1308-1315
|
artikel
|
| 27 |
Incoherent transport in NEMO5: realistic and efficient scattering on phonons
|
Charles, James
|
|
2016
|
15 |
4 |
p. 1123-1129
|
artikel
|
| 28 |
Introduction
|
Bescond, Marc
|
|
2016
|
15 |
4 |
p. 1119-1122
|
artikel
|
| 29 |
Negative differential resistance effect in similar right triangle graphene devices
|
Wang, Lihua
|
|
2016
|
15 |
4 |
p. 1284-1290
|
artikel
|
| 30 |
Negative differential resistance in new structures based on graphene nanoribbons
|
Sharifi, M.
|
|
2016
|
15 |
4 |
p. 1361-1369
|
artikel
|
| 31 |
20-nm T-gate composite channel enhancement-mode metamorphic HEMT on GaAs substrates for future THz applications
|
Ajayan, J.
|
|
2016
|
15 |
4 |
p. 1291-1296
|
artikel
|
| 32 |
Numerical analysis of transmission coefficient, LDOS, and DOS in superlattice nanostructures of cubic $$\hbox {Al}_{x}\hbox {Ga}_{1-x}\hbox {N/GaN}$$AlxGa1-xN/GaN resonant tunneling MODFETs
|
Bouguenna, D.
|
|
2016
|
15 |
4 |
p. 1269-1274
|
artikel
|
| 33 |
Numerical modeling of thermal behavior and structural optimization of a-Si:H solar cells at high temperatures
|
Ganji, Jabbar
|
|
2016
|
15 |
4 |
p. 1541-1553
|
artikel
|
| 34 |
On the local approximation of the electron–photon interaction self-energy
|
Cavassilas, Nicolas
|
|
2016
|
15 |
4 |
p. 1233-1239
|
artikel
|
| 35 |
Partially coherent electron transport in terahertz quantum cascade lasers based on a Markovian master equation for the density matrix
|
Jonasson, O.
|
|
2016
|
15 |
4 |
p. 1192-1205
|
artikel
|
| 36 |
Quantum dynamics of optical phonons generated by optical excitation of a quantum dot
|
Wigger, Daniel
|
|
2016
|
15 |
4 |
p. 1158-1169
|
artikel
|
| 37 |
Random phonon model of dissipative electron transport in nanowire MOSFETs
|
Mil’nikov, Gennady
|
|
2016
|
15 |
4 |
p. 1179-1191
|
artikel
|
| 38 |
Reconfiguration of optical logics gates at 160 Gb/s based on SOA-MZI
|
Lovkesh,
|
|
2016
|
15 |
4 |
p. 1473-1483
|
artikel
|
| 39 |
Self-consistent device simulation of a-Si p–i–n solar cells and energy resolution analyses of capture and emission processes
|
Suzuki, Azuma
|
|
2016
|
15 |
4 |
p. 1554-1562
|
artikel
|
| 40 |
Self-consistent quantum drift-diffusion model for multiple quantum well IMPATT diodes
|
Ghosh, Monisha
|
|
2016
|
15 |
4 |
p. 1370-1387
|
artikel
|
| 41 |
Simulation of dielectric behavior in RFeO$$_{3}$$3 orthoferrite ceramics (R = rare earth metals)
|
Ghayour, Hamid
|
|
2016
|
15 |
4 |
p. 1275-1283
|
artikel
|
| 42 |
Structural dependence of the transferred charge density in triboelectric nanogenerators: analytical and numerical study
|
Kim, SeongMin
|
|
2016
|
15 |
4 |
p. 1593-1597
|
artikel
|
| 43 |
Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model
|
Prajoon, P.
|
|
2016
|
15 |
4 |
p. 1511-1520
|
artikel
|
| 44 |
The nonequilibrium Green’s function picture of inelastic processes in nanostructure photovoltaics
|
Aeberhard, Urs
|
|
2016
|
15 |
4 |
p. 1219-1232
|
artikel
|
| 45 |
Theoretical investigation of the electronic structure and optical properties of zinc-doped magnesium oxide
|
Wang, Jia
|
|
2016
|
15 |
4 |
p. 1521-1530
|
artikel
|
| 46 |
Towards realistic time-resolved simulations of quantum devices
|
Weston, Joseph
|
|
2016
|
15 |
4 |
p. 1148-1157
|
artikel
|
| 47 |
Underlap channel silicon-on-insulator quantum dot floating-gate MOSFET for low-power memory applications
|
Dabhi, Chetan T.
|
|
2016
|
15 |
4 |
p. 1563-1569
|
artikel
|
| 48 |
Unphysical features in the application of the Boltzmann collision operator in the time-dependent modeling of quantum transport
|
Zhan, Z.
|
|
2016
|
15 |
4 |
p. 1206-1218
|
artikel
|
| 49 |
Yield-driven power-delay-optimal CMOS full-adder design complying with automotive product specifications of PVT variations and NBTI degradations
|
Abbas, Zia
|
|
2016
|
15 |
4 |
p. 1424-1439
|
artikel
|
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